Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs MXIC Flash MX29GL128EH/L This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from MXIC MX29GL128EH/L Flash to Eon EN29GL128H/L Flash. 2. GENERAL FUNCTION COMPARISON TABLE: The following table highlights the major features of these two devices. Features voltage range Pin to Pin Page Access time Write buffer length Sector Architecture Byte/Word mode Page read buffer length CFI Compliant VLKO range Persistent methods of advanced sector protect JEDEC Data# polling & toggle bit command Erase Suspend Resume / Program Resume / Minimum cycle Package Suspend endurance EN29GL128H/L 2.7 ~ 3.6 Compatible (for 56 TSOP) Compatible (for 64 FBGA) MX29GL128EH/L 2.7 ~ 3.6 Compatible (for 56 TSOP) Compatible (for 64 FBGA) 25ns 25ns 64 Byte Uniform 128K Byte Yes 64 Byte Uniform 128K Byte Yes 16 Byte 16 Byte Yes 2.3V~2.5V Yes 2.3V~2.5V Yes Yes Yes Yes Yes Yes Yes Yes 100K 100K 56-pin 14mm x 20mm TSOP 64 ball 11mm x13mm FBGA 56-pin 14mm x 20mm TSOP 64 ball 11mm x13mm FBGA This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE & PERFORMANCE CONSIDERATIONS 3.1 ICC comparison Current EN29GL128H/L Typ Read ICC1 (@5MHz) MX29GL128EH/L Unit Max Typ Max 15 30 30 50 mA Write ICC2 20 30 26 35 mA Standby ICC3 1.5 10 30 100 A 3.2 Max VID comparison MX29GL128EH/L VID range is 9.5V~10.5V. But EN29GL128H/L doesn’t support VID function. Any voltage level higher than chip spec would damage the device, possibly. (Using high voltage into Autoselect mode) 3.2 Max access time comparison EN29GL128H/L access time: 70ns. MX29GL128EH/L access time: 90ns. 3.3 Different secure silicon lengths EN29GL128H/L: 256 byte. MX29GL128EH/L: 16 Byte. 3.4 Different VHH level (for accelerating programming functions) EN29GL128H/L voltage level: 8.5V~9.5V. MX29GL128EH/L voltage level: 9.5V~10.5V. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Except of Manufacturer ID, Device Identifications are the same For EN29GL128H/L: manufacture ID: 007Fh (A8 = “0”), 001Ch (A8 = “1”); device ID: 227Eh / 2221h / 2201h. For MX29GL128EH/L: manufacture ID: 00C2h, device ID: 227Eh / 2221h / 2201h. 4.2. Password protection commands EN29GL128H/L: No support. MX29GL128EH/L: Support. 4.3. Deep power down commands EN29GL128H/L: No support. MX29GL128EH/L: Support. 4.4. Different PPB protect range EN29GL128H/L: ector 0~3 and 124~127 have PPB for each sector. Sector 4~123 are 1 PPB per 4 sectors. MX29GL128EH/L: A non-volatile protection bit (SPB) is assigned to each block. 4.5. Multi-sector erasure EN29GL128H/L: No supported. (Users must issue another sector erase command for the next sector to be erased after the previous one is completed) MX29GL128EH/L: Support This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 Power-on and Reset Timings Parameter Description EN29GL128H/L MX29GL128EH/L tVCS Vcc Setup Time (min) RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write 50µs 500µs 10us 10µs 500ns 500ns 50ns 200ns 0ns 0ns 50ns 50ns 20µs 20µs 500ns 500ns tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/6/16 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com