Eon Silicon Solution Inc. Application Note Eon Flash EN29LV320B vs Spansion Flash S29AL032D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/10/19 ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from Spansion S29AL032D Flash to Eon EN29LV320B Flash. 2. GENERAL FUNCTION COMPARISON TABLE: The following table is major features of these two devices. Features voltage range Pin to Pin Access time Secured Silicon Sector region EN29LV320B 2.7 ~ 3.6 compatible (for 48 TSOP) 70ns S29AL032D 2.7 ~ 3.6 compatible (for 48 TSOP) 70ns / 90ns None 128 word Boot sector models: Boot sector models: 8K Byte x 8 sectors / 64K Byte X Sector 8K Byte x 8 sectors / 64K Byte X 63 sectors, boot sectors at Top or Architecture 63 sectors, boot sectors at Top or Bottom Bottom Uniform sector models: 64K Byte X 64 sectors Byte/Word mode Yes Only TSOP 48 support WP#/ACC Yes Yes VID and VHH 10.5V - 11.5V 11.5V - 12.5V Max CFI Compliant Yes Yes Erase Yes Yes Suspend/Resume Continuous None Yes Sector Erasure Minimum endurance cycle Package 100K 1,000K (typ.) 48-pin 12mm x 20mm TSOP 48 ball 6mm x 8mm TFBGA This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. A, Issue Date: 2009/10/19 48-pin 12mm x 20mm TSOP 48 ball 6mm x 10mm FBGA 40 pin 10mm x 20mm SOP ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison Current EN29LV320B S29AL032D Unit Typ Max Typ Max Read ICC1 9 16 9 16 mA Write ICC2 20 30 15 35 mA Standby ICC3 1 5.0 0.2 5.0 μA 3.2 Max VID comparison S29AL032D VID range is 11.5V and 12.5V. But EN29LV320B VID range is 10.5V~11.5V. Any voltage level higher than 11.5V would damage the device, possibly. 4. SOFTWARE CONSIDERATIONS Except manufacture ID, there is no difference in Device ID, and Autoselect functions for EN29LV320B and S29AL032D are the same. 4.1 Manufacturer, Device Identification and Autoselect Information For EN29LV320B autoselect mode table This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2009/10/19 ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. For S29AL032D autoselect mode table 4.2. Continuous Sector Erasure The EN29LV320B doesn’t support Continuous Sector Erasure function. Users must issue another sector erase command for the next sector to be erased after the previous one is completed for EN29LV320B. 4.3. Secured Silicon Sector region EN29LV320B: No support. S29AL032D: Support 128 word. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2009/10/19 ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 Power-on and Reset Timings Parameter Description tVCS Vcc Setup Time RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 Test Setup EN29LV320B S29AL032D Min. 50µs 50µs Min. 10us None* Min. 500ns 500ns Min. 50ns 50ns Min. 0ns 0ns Min. 50ns None* Max. 20µs 20µs Max. 500ns 500ns 5.2 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. EN29LV320B S29AL032D Typ Max Typ Max 0.1 2 0.7 10 sec Chip Erase Time 8 70 45 None* sec Byte Programming Time 8 200 9 300 µs Word Programming Time 8 200 11 360 µs Byte 33.6 100.8 36 108 sec Word 16.8 50.4 24 72 sec Parameter Sector Erase Time Chip Programming Time Unit Note*: There is no clear description in datasheet. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2009/10/19 ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/10/19 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2009/10/19 ©2005 Eon Silicon Solution Inc. www.ession.com