CJD340 NPN CJD350 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340 and CJD350 are complementary silicon power transistors manufactured in a surface mount package, and designed for high voltage general purpose applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO 300 Collector-Emitter Voltage VCEO VEBO 300 V 3.0 V IC ICM PD 500 mA 750 mA 15 W PD TJ, Tstg 1.56 W -65 to +150 °C Thermal Resistance ΘJC 8.33 °C/W Thermal Resistance ΘJA 80.1 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=300V ICEO VCE=300V MAX 100 UNITS μA 100 μA IEBO VEB=3.0V 100 μA BVCEO IC=1.0mA VCE(SAT) IC=100mA, IB=10mA (CJD340) IC=100mA, IB=10mA (CJD350) 1.0 V 2.6 V 1.5 V 2.0 V hFE VCE=10V, IC=1.0A (CJD340) VCE=10V, IC=1.0A (CJD350) VCE=10V, IC=50mA 30 fT VCE=10V, IC=50mA, f=10MHz 10 Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature VCE(SAT) VBE(ON) VBE(ON) 300 UNITS V V 240 MHz R5 (11-June 2013) CJD340 NPN CJD350 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R5 (11-June 2013) w w w. c e n t r a l s e m i . c o m CJD340 NPN CJD350 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS NPN TYPICAL ELECTRICAL CHARACTERISTICS R5 (11-June 2013) w w w. c e n t r a l s e m i . c o m CJD340 NPN CJD350 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS PNP TYPICAL ELECTRICAL CHARACTERISTICS R5 (11-June 2013) w w w. c e n t r a l s e m i . c o m