CZT2955 PNP CZT3055 NPN SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2955 and CZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation SYMBOL UNITS VCBO VCER 100 70 V VCEO VEBO 60 V 7.0 V IC IB V 6.0 A 3.0 A 2.0 W PD TJ, Tstg -65 to +150 °C ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEO 700 μA 1.0 mA 5.0 mA Operating and Storage Junction Temperature Thermal Resistance ICEV IEBO BVCER BVCEO VCE(SAT) VBE(ON) hFE VCE=30V VCE=100V, VEB=1.5V VEB=7.0V IC=30mA, RBE=100Ω IC=30mA 70 V 60 IC=4.0A, IB=400mA VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A VCE=4.0V, IC=6.0A 5.0 20 fT VCE=10V, IC=500mA, f=1.0MHz 2.5 V 1.1 V 1.5 V 70 MHz R4 (1-March 2010) CZT2955 PNP CZT3055 NPN SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R4 (1-March 2010) w w w. c e n t r a l s e m i . c o m