CZT31C NPN CZT32C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 3.0 amps. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage SYMBOL UNITS VCBO VCEO 100 V 100 V VEBO IC 5.0 V 3.0 A Peak Collector Current ICM 6.0 A Continuous Base Current IB PD 1.0 A 2.0 W Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature 10 W -65 to +150 °C Thermal Resistance PD TJ, Tstg ΘJA 62.5 °C/W Thermal Resistance ΘJC 12.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICES VCE=100V 200 µA ICEO IEBO VCE=60V VEB=5.0V 300 µA 1.0 mA BVCEO IC=30mA VCE(SAT) IC=3.0A, IB=375mA VCE=4.0V, IC=3.0A 1.2 V 1.8 V VBE(ON) hFE hFE fT 100 VCE=4.0V, IC=1.0A VCE=4.0V, IC=3.0A 10 VCE=10V, IC=500mA, f=1.0MHz 3.0 V 25 100 MHz R4 (1-March 2010) CZT31C NPN CZT32C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R4 (1-March 2010) w w w. c e n t r a l s e m i . c o m