CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage SYMBOL UNITS VCBO VCEO 100 V 100 V VEBO IC 5.0 V 5.0 A Peak Collector Current ICM 8.0 A Continuous Base Current IB PD 120 mA 2.0 W TJ, Tstg ΘJA -65 to +150 °C 62.5 °C/W Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS ICEO VCE=50V 500 µA ICBO VCB=100V 200 µA IEBO VEB=5.0V IC=30mA 2.0 mA BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE fT MIN 100 IC=3.0A, IB=12mA IC=5.0A, IB=20mA VCE=3.0V, IC=3.0A VCE=3.0V, IC=500mA VCE=3.0V, IC=3.0A Cob VCE=4.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz (CZT122) Cob VCB=10V, IE=0, f=1.0MHz (CZT127) V 2.0 V 4.0 V 2.5 V 1000 1000 4.0 MHz 200 pF 300 pF R4 (1-March 2010) CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R4 (1-March 2010) w w w. c e n t r a l s e m i . c o m