CMXT2207 SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for small signal general purpose and switching applications. MARKING CODE: X07 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA NPN PNP 75 40 6.0 60 60 5.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise NPN SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=50V ICBO VCB=60V, TA=125°C 10 ICBO VCB=50V, TA=125°C IEBO VEB=3.0V 10 ICEV VCE=60V, VEB=3.0V 10 ICEV VCE=30V, VBE=0.5V BVCBO IC=10μA 75 BVCEO IC=10mA 40 BVEBO IE=10μA 6.0 VCE(SAT) IC=150mA, IB=15mA 0.3 VCE(SAT) IC=500mA, IB=50mA 1.0 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 VBE(SAT) IC=500mA, IB=50mA 2.0 hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 fT VCE=20V, IC=50mA, f=100MHz - noted) PNP MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 300 50 200 - UNITS V V V mA mW °C °C/W UNITS nA nA μA μA nA nA nA V V V V V V V MHz MHz R3 (12-February 2010) CMXT2207 SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS Cob VCB=10V, IE=0, f=1.0MHz 8.0 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 25 pF Cib VEB=2.0V, IC=0, f=1.0MHz 30 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 kΩ hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 kΩ hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10-4 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 μS hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 μS rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 ps NF VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz 4.0 dB ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 45 ns td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 40 ns toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns ts VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns SOT-26 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: X07 R3 (12-February 2010) w w w. c e n t r a l s e m i . c o m