STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 N-channel 950 V, 3 Ω typ., 4 A Zener-protected SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK 3 1 2 STP5N95K3 TAB ID PTOT 90 W 950 V 3.5 Ω 25 W 4A 90 W STU5N95K3 TAB 90 W • 100% avalanche tested 3 1 RDS(on) max STD5N95K3 STF5N95K3 TO-220FP VDS 3 2 2 1 TO-220 • Extremely large avalanche performance • Gate charge minimized • Very low intrinsic capacitances Figure 1. Internal schematic diagram D(2, TAB) • Zener-protected Applications • Switching applications Description G(1) S(3) AM01476v1 These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking STD5N95K3 STF5N95K3 Package Packaging DPAK Tape and reel TO-220FP 5N95K3 STP5N95K3 TO-220 STU5N95K3 IPAK May 2013 This is information on a product in full production. DocID15696 Rev 3 Tube 1/23 www.st.com 23 Contents STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 .............................................. 9 DocID15696 Rev 3 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP TO-220 IPAK VGS Gate- source voltage ±30 (1) V ID Drain current (continuous) at TC = 25 °C 4 4 4 A ID Drain current (continuous) at TC = 100 °C 3 3(1) 3 A Drain current (pulsed) 16 16(1) 16 A Total dissipation at TC = 25 °C 90 25 90 W IDM (2) PTOT IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 100 mJ 5 V/ns dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s,TC = 25 °C) TJ Tstg Operating junction temperature Storage temperature 2500 V -55 to 150 °C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤ 4 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK TO-220FP TO-220 IPAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb(1) Thermal resistance junction-pcb max 1.39 5 1.39 62.5 50 °C/W 100 °C/W °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu DocID15696 Rev 3 3/23 Electrical characteristics 2 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 950 V IDSS Zero gate voltage VDS = 950 V drain current (VGS = 0) VDS = 950 V, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 4 5 V 3 3.5 Ω Min. Typ. Max. Unit - 460 - pF - 38 - pF - 1 - pF VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source onVGS = 10 V, ID = 2 A resistance 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related VDS = 0 to 760 V, VGS = 0 - 970 - pF Co(er)(2) Equivalent capacitance energy related VDS = 0 to 760 V, VGS = 0 - 15 - pF Rg Gate input resistance f=1 MHz , ID = 0 - 5.5 - Ω Qg Total gate charge - 19 - nC Qgs Gate-source charge - 4.7 - nC Qgd Gate-drain charge VDD = 760 V, ID = 4 A, VGS = 10 V (see Figure 20) - 12 - nC VDS = 25 V, f = 1 MHz, VGS = 0 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/23 DocID15696 Rev 3 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 475 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Rise time td(off) tf Turn-off-delay time Fall time Min. Typ. Max. Unit - 17 - ns - 7 - ns - 32 - ns - 18 - ns Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 4 A Source-drain current (pulsed) - 16 A 1.6 V Forward on voltage ISD = 4 A, VGS = 0 - trr Reverse recovery time - 410 ns Qrr Reverse recovery charge - 3.5 µC IRRM Reverse recovery current ISD = 4 A, di/dt = 100 A/µs VDD= 60 V (see Figure 21) - 17 A ISD = 4 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 21) - 516 ns - 4.1 µC - 16 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Test conditions Gate-source breakdown voltage IGS= ± 1 mA, ID=0 Min. Typ. 30 - Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. DocID15696 Rev 3 5/23 Electrical characteristics 2.1 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Electrical characteristics (curves) Figure 2. Safe operating area for IPAK, DPAK AM05586v1 ID (A) 10 is 10µs 0.1 100µs D S( on ) O Li per m at ite io d ni by n m this ax a R rea 1 Figure 3. Thermal impedance for IPAK, DPAK 1ms 10ms Tj=150°C Tc=25°C Sinlge pulse 0.01 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP $0Y ,' $ RQ V V ' 6 2 /L SHU P DW LWH LR G QL E\ Q P WKL D[ VD 5 UH D LV PV 7M & 7F & PV 6LQOJH SXOVH 9'69 Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220 $0Y ,' $ 6 RQ ' 2 /L SHU P DW LWH LR G QL E\ Q P WKL D[ VD 5 UH D LV V V PV PV 7M & 7F & 6LQOJH SXOVH 6/23 9'69 DocID15696 Rev 3 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Figure 8. Output characteristics Figure 9. Transfer characteristics $0Y ,' $ Electrical characteristics 9*6 9 9 9 $0Y 9'6 9 9'' 9 9'6 9'69 Figure 10. Gate charge vs gate-source voltage ,' $ 9*69 Figure 11. Static drain-source on-resistance $0Y 5'6RQ 2KP 9*6 9 9'6 9 9*6 9 $0Y ,' $ 4JQ& Figure 12. Capacitance variations ,'$ Figure 13. Output capacitance stored energy $0Y & S) (RVV - $0Y &LVV &RVV &UVV 9'69 DocID15696 Rev 3 9'69 7/23 Electrical characteristics STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Figure 14. Normalized gate threshold voltage vs temperature $0Y 9*6WK QRUP Figure 15. Normalized on-resistance vs temperature 9*6 9 ,' $ 9'6 9*6 ,' $ $0Y 5'6RQ QRUP Figure 16. Source-drain diode forward characteristics $0Y 96' 9 7-& 7- & 7-& Figure 17. Normalized BVDSS vs temperature $0Y %9'66 QRUP ,' P$ 7- & 7- & ,6'$ Figure 18. Maximum avalanche energy vs starting Tj $0Y ($6 P- ,' $ 9'' 9 8/23 7-& DocID15696 Rev 3 7-& STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 21. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 22. Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID15696 Rev 3 10% AM01473v1 9/23 Package mechanical data 4 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/23 DocID15696 Rev 3 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Package mechanical data Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R V2 0.20 0° 8° DocID15696 Rev 3 11/23 Package mechanical data STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Figure 25. DPAK (TO-252) drawing 0068772_K 12/23 DocID15696 Rev 3 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Package mechanical data Figure 26. DPAK footprint (a) Footprint_REV_K a. All dimensions are in millimeters DocID15696 Rev 3 13/23 Package mechanical data STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Table 10. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/23 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID15696 Rev 3 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Package mechanical data Figure 27. TO-220FP drawing 7012510_Rev_K_B DocID15696 Rev 3 15/23 Package mechanical data STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/23 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID15696 Rev 3 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Package mechanical data Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S DocID15696 Rev 3 17/23 Package mechanical data STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Table 12. IPAK (TO-251) mechanical data mm. DIM min. typ. A 2.20 2.35 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.15 E 6.40 6.55 e e1 2.28 4.40 H 18/23 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID15696 Rev 3 1.00 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Package mechanical data Figure 29. IPAK (TO-251) drawing 0068771_K DocID15696 Rev 3 19/23 Packaging mechanical data 5 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 20/23 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID15696 Rev 3 18.4 22.4 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Packaging mechanical data Figure 30. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 31. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID15696 Rev 3 21/23 Revision history 6 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Revision history Table 14. Document revision history 22/23 Date Revision Changes 12-May-2009 1 First release 11-Dec-2009 2 Document status promoted from preliminary data to datasheet 15-May-2013 3 – Updated: Section 4: Package mechanical data – Minor text change on the cover page. DocID15696 Rev 3 STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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