SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01 DESCRIPTION The SD57045-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045-01 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. BRANDING SD57045-01 PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 1 MΩ) Value Unit 65 V 65 V ± 20 V Drain Current 5 A Power Dissipation (@ Tc = 70°C) 93 W Gate-Source Voltage Max. Operating Junction Temperature Storage Temperature 200 °C -65 to + 200 °C 1.4 °C/W THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance November, 19 2002 1/11 SD57045-01 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 250 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 0.9 V 65 V 2.5 0.7 GFS VDS = 10 V ID = 5 A 2.7 mho CISS VGS = 0 V VDS = 28 V f = 1 MHz 80 pF COSS VGS = 0 V VDS = 28 V f = 1 MHz 40 pF CRSS VGS = 0 V VDS = 28 V f = 1 MHz 3.2 pF 2.0 Ref. 7133620B DYNAMIC Symbol Test Conditions Min. Unit IDQ = 250 mA IMD3 VDD = 28 V IDQ = 250 mA POUT = 45 W PEP GPS VDD = 28 V IDQ = 250 mA POUT = 45 W PEP 13 15 dB VDD = 28 V IDQ = 250 mA POUT = 45 W PEP 33 40 % ηD VDD = 28 V IDQ = 250 mA ALL PHASE ANGLES POUT = 45 W 45 f = 945 MHz 10:1 note: f 1 = 945 MHz IMPEDANCE DATA D ZD Typical Input W -32 PEP f 2 = 945.1 MHz Typical Drain G Zin S 2/11 Max. VDD = 28 V Load mismatch f = 945 MHz Typ. POUT FREQ. ZIN (Ω) ZDL(Ω) 925 MHz 1.27 + j 0.82 2.22 - j 1.63 930 MHz 1.21 + j 0.79 2.24 - j 1.61 945 MHz 1.04 + j 0.71 2.30 - j 1.52 960 MHz 0.93 + j 0.43 2.37 - j 1.37 965 MHz 0.91 + j 0.41 2.43 - j 1.36 -28 dBc VSWR SD57045-01 TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Gate-Source Voltage vs. Case Temperature C (pF) VGS (NORMALIZED) 1000 1.04 f = 1 MHz 1.02 Ciss 100 ID = 3A ID = 2A 1 Coss ID = 1.5 A 10 0.98 ID = 1A Crss VDS = 10 V ID = 250 mA 1 0.96 0 10 20 30 40 50 -25 0 Vds (V) 25 50 75 Tcase (°C) Drain Current vs. Gate Voltage Safe Operating Area Id (A) Y-Axis 4 10 3.5 o Tc = 25 C 3 o Tc = 70 C 2.5 o Tc = 100 C 1 2 1.5 1 VDS = 10 V 0.5 0 0.1 2.5 3 3.5 4 Vgs (V) 4.5 5 1 10 100 X-Axis 3/11 SD57045-01 TYPICAL PERFORMANCE (CW) Output Power and Power Gain vs. Input Power Pout (W) Gp (dB) 70 Power Gain vs. Output Power Gp (dB) 18 20 16 18 50 14 16 40 12 14 10 12 8 10 6 8 4 6 Gp 60 Idq = 450 mA 30 Idq = 250 mA Idq = 150 mA Idq = 75 mA Pout 20 VDD = 28 V IDQ = 250 mA f = 945 MHz 10 0 0 0.5 1 1.5 2 2.5 3 Vdd = 28 V f = 945 Mhz 0.1 1 10 Pin (W) 100 Pout (W) Efficiency vs. Output Power Broadband Power Performance Nc (%) Gp, GAIN (dB) 60 16 RTL (dB) 20 15 18 50 GAIN 14 16 13 14 40 30 12 12 RETURN LOSS 11 10 10 8 9 6 20 10 Freq = 945 Mhz VDD = 28 V IDQ = 250mA 0 8 0 10 20 30 40 50 60 4 925 930 935 Pout (W) 945 950 955 960 965 f, FREQUENCY (MHz) Output Power vs Gate Biat Voltage Output Power vs. Drain Voltage Pout (W) Pout (W) 90 60 Vdd = 28 V Idq = 250 mA f = 945 MHz 80 940 50 70 Pin =3 W 60 Pin = 2 W 40 30 50 40 Pin = 1 W 20 30 10 VDD = 28 V Pin = 1.5 W f = 945 MHz 20 0 10 12 16 20 24 Vds (V) 4/11 28 32 36 0 0.5 1 1.5 2 VGS (V) 2.5 3 3.5 4 SD57045-01 TYPICAL PERFORMANCE (PEP) Output Power vs. Input Power Power Gain vs. Input Power Pout (W) Gp (dB) 60 18 50 17 40 16 30 15 20 14 VDD = 28 V IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz 10 VDD = 28 V IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz 13 0 12 0 0.5 1 1.5 2 0 10 20 30 Pin (W) 40 50 60 70 Pin (W) Intermodulation Distortion vs. Output Power Efficiency vs. Output Power (PeP) IMD (dBc) Nd (%) 0 60 VDD = 28 V IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz -5 -10 50 -15 -20 -25 40 -30 IMD3 -35 -40 30 -45 IMD5 -50 20 -55 IMD7 -60 f1 = 945 Mhz f2 = 945.1 Mhz VDD = 28 V IDQ = 250mA 10 -65 -70 -75 -80 0 0 10 20 30 40 50 0 60 10 20 30 40 50 60 Pout (WPEP) Pout (WPEP) Intermodulation Distortion vs. Output Power Case A Third Order Intercept Point IMD3 (dBc) Pout (dBm) 0 70 60 -10 50 -20 Fundamental Idq = 75 mA -30 40 30 Idq = 150 mA 20 -40 Idq = 450 mA 10 IMD3 -50 Idq = 250 mA 0 -10 -60 VDS = 26 V ID = 1.8 A f1 = 945 MHz f2 = 945.1 MHz -20 VDD = 28 V f1 = 945 Mhz f2 = 945.1 Mhz -70 -30 -80 -40 0.1 1 10 Pout (W) 100 10 15 20 25 30 35 40 45 Pin (dBm) 5/11 SD57045-01 COMMON SOURCE S-PARAMETER (VDS = 13.5 V IDS = 2 A) FREQ (MHz) lS11l S11∠φ lS21l S21∠φ lS 12l S12∠φ lS22l S22∠φ 50 60 70 80 90 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.902 0.902 0.902 0.902 0.902 0.903 0.905 0.910 0.916 0.921 0.927 0.933 0.939 0.944 0.950 0.954 0.957 0.960 0.963 0.966 0.968 0.970 0.972 0.973 0.974 0.926 0.977 0.979 0.980 0.982 0.984 0.986 0.989 0.990 -168 -169 -168 -170 -170 -171 -173 -174 -174 -174 -175 -175 -175 -175 -175 -175 -175 -175 -175 -175 -176 -176 -176 -176 -176 -177 -177 -177 -177 -177 -177 -177 -177 -177 14.591 13.845 13.069 12.266 11.436 10.587 6.604 4.670 3.588 2.884 2.379 2.005 1.719 1.494 1.317 1.169 1.051 0.942 0.853 0.770 0.696 0.630 0.568 0.515 0.465 0.422 0.301 0.348 0.317 0.292 0.267 0.248 0.231 0.223 88 88 87 86 86 84 78 71 66 61 56 52 48 45 42 40 38 36 34 32 31 29 28 27 26 25 25 24 24 24 24 24 24 25 0.015 0.015 0.014 0.014 0.014 0.014 0.014 0.013 0.013 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.007 0.006 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.007 0.008 0.009 0.010 0.011 0.012 0.013 0.013 -4 -4 -5 -5 -5 -6 -9 -11 -12 -11 -13 -14 -14 -15 -14 -12 -10 -5 -1 7 16 28 40 50 59 66 74 79 83 84 85 86 87 88 0.781 0.781 0.781 0.781 0.782 0.782 0.788 0.799 0.812 0.825 0.839 0.853 0.866 0.878 0.889 0.899 0.908 0.916 0.923 0.930 0.935 0.940 0.944 0.948 0.950 0.950 0.949 0.946 0.941 0.934 0.923 0.910 0.892 0.898 -170 -170 -171 -171 -171 -172 -173 -173 -173 -173 -173 -173 -173 -173 -173 -173 -174 -174 -174 -174 -174 -174 -174 -174 -174 -174 -175 -176 -177 -178 180 177 175 172 6/11 SD57045-01 COMMON SOURCE S-PARAMETER (VDS = 28 V IDS = 2 A) FREQ (MHz) lS 11l S11∠φ lS21l S21∠φ lS12l S12∠φ lS 22l S22∠φ 50 60 70 80 90 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.867 0.870 0.873 0.876 0.880 0.884 0.904 0.915 0.920 0.927 0.933 0.940 0.947 0.953 0.958 0.963 0.966 0.968 0.971 0.974 0.976 0.977 0.979 0.980 0.981 0.982 0.983 0.985 0.985 0.986 0.987 0.989 0.991 0.992 -158 -159 -160 -162 -163 -164 -169 -171 -172 -173 -173 -173 -174 -174 -174 -174 -174 -175 -175 -175 -175 -176 -176 -176 -176 -177 -177 -177 -177 -177 -177 -177 -177 -177 20.011 18.979 17.907 16.794 15.649 14.478 8.997 6.310 4.797 3.813 3.106 2.589 2.194 1.890 1.652 1.456 1.299 1.157 1.039 0.932 0.838 0.755 0.678 0.613 0.550 0.498 0.449 0.410 0.373 0.344 0.314 0.292 0.273 0.263 91 90 89 88 87 86 77 70 62 56 51 47 43 40 37 34 32 30 28 26 25 23 22 21 20 19 19 19 18 18 18 19 19 19 0.013 0.013 0.013 0.013 0.013 0.013 0.012 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.006 0.005 0.004 0.004 0.004 0.004 0.004 0.004 0.005 0.006 0.006 0.007 0.008 0.009 0.010 0.010 0.011 0.012 0.013 2 1 -0 -1 -2 -3 -9 -14 -18 -21 -22 -23 -23 -23 -21 -17 -12 -4 6 18 31 42 54 61 69 74 28 80 83 86 88 90 93 94 0.675 0.676 0.677 0.679 0.681 0.683 0.700 0.722 0.748 0.774 0.799 0.823 0.843 0.862 0.877 0.891 0.904 0.914 0.923 0.932 0.940 0.946 0.951 0.955 0.957 0.958 0.957 0.954 0.949 0.940 0.929 0.913 0.896 0.884 -163 -164 -164 -165 -165 -165 -167 -167 -167 -167 -167 -168 -168 -168 -169 -169 -169 -170 -170 -170 -172 -170 -170 -171 -171 -171 -172 -173 -174 -175 -177 -180 -177 -175 7/11 SD57045-01 945 MHz TEST CIRCUIT SCHEMATIC VGG + + + + RF IN VD D RF OUT NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES. Ref. 7143566A 945 MHz TEST CIRCUIT COMPONENT PART LIST COMPONENT C19 C18, C14 C17 C16, C12, C11, C1 C15 C13 C10 C9, C2 C8 C7, C6, C5, C4 C3 R3 R2 R1 FB2 FB1 L2 L1 PCB 8/11 DESCRIPTION 220 µF/ 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 0.1 µF/500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR 100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 µF/50 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 1000 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 3.0 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8 - 8.0 pF GIGA TRIM VARIABLE CAPACITOR 6.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 120 OHM, 2W SURFACE MOUNT CHIP RESISTOR 4.7M OHM, 1W SURFACE MOUNT CHIP RESISTOR 18K OHM, 1W SURFACE MOUNT CHIP RESISTOR SHIELD BEAD SURFACE MOUNT EMI SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE WOVEN FIBERGLASS REINFORCED PTFE 0.080” THK, εr=2.55, 2 Oz EDCu BOTH SIDE SD57045-01 945 MHz PRODUCTION TEST FIXTURE 4 inches 945 MHz TEST CIRCUIT PHOTOMASTER 6.4 inches Ref. 7143566A 9/11 SD57045-01 M250 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. MAX MIN. TYP. MAX A 5.21 5.71 0.205 0.225 B 2.16 2.92 0.085 0.115 C 5.59 6.09 0.220 0.240 D 8.89 9.40 0.350 0.370 E 9.40 9.91 0.370 0.390 F 0.11 0.15 0.004 0.006 G 0.89 1.14 0.035 0.045 H 1.45 1.70 0.057 0.067 I 2.67 3.94 0.105 0.155 Controlling dimension: Inches 10/11 TYP. Inch 1022729B SD57045-01 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 11/11