LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE PowerSO-10RF (straight lead) • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9060S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060S’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optmized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE LET9060S BRANDING LET9060S PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V V(BR)DSS Drain-Source Voltage 65 VGS Gate-Source Voltage -0.5 to +15 V 7 A 170 W ID PDISS Tj TSTG Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature 165 °C -65 to +150 °C 0.7 °C/W THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance March, 25 2003 1/10 LET9060S ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol Test Conditions V(BR)DSS VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 26 V IGSS VGS = 5 V VGS(Q) VDS = 26 V ID = 100 mA VDS(ON) VGS = 10 V ID = 3 A Min. Typ. Max. 65 Unit V VDS = 0 V 2.0 0.7 1 µA 1 µA 5.0 V 0.8 V GFS VDS = 10 V ID = 3 A CISS VGS = 0 V VDS = 26 V f = 1 MHz 74 pF COSS VGS = 0 V VDS = 26 V f = 1 MHz 40 pF CRSS VGS = 0 V VDS = 26 V f = 1 MHz 2.8 pF 2.5 mho Ref. 7143417B DYNAMIC (f = 945 MHz) Symbol Test Conditions GP VDD = 26 V IDQ = 250 mA POUT = 60 W PEP ηD VDD = 26 V IDQ = 250 mA POUT = 60 W PEP IMD3 VDD = 26 V IDQ = 250 mA POUT = 60 W PEP P1dB VDD = 26 V IDQ = 250 mA GP VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA ηD Load mismatch Min. Typ. Max. 17 Unit dB 47 % -28 dBc 70 W POUT = 60 W 16.7 dB POUT = 60 W 61 % VDD = 26 V IDQ = 250 mA POUT = 60 W ALL PHASE ANGLES 10:1 VSWR DYNAMIC (f = 925 - 960 MHz) Symbol 2/10 Test Conditions Min. Typ. Max. Unit P1dB VDD = 26 V IDQ = 250 mA 65 W GP VDD = 26 V IDQ = 250 mA POUT = 60 W 16 dB ηD VDD = 26 V IDQ = 250 mA POUT = 60 W 56 % LET9060S IMPEDANCE DATA D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S FREQ. MHz ZIN (Ω) ZDL(Ω) 860 0.65 - j 0.05 2.0 + j 0.1 880 0.75 - j 0.6 2.0 + j 0.1 900 0.9 - j 1.4 1.4 + j 0.2 920 0.4 - j 1.3 1.4 + j 0.5 940 0.4 - j 0.8 1.2 + j 0.3 960 0.5 - j 1.6 1.8 + j 1.0 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 2 Machine Model M3 MOISTURE SENSITIVITY LEVEL Test Methodology J-STD-020B Rating MSL 3 3/10 LET9060S TYPICAL PERFORMANCE Power Gain Vs Output Power Power Gain Vs Output Power 1000 20 f = 1MHz 19 Idq = 600 mA 18 Ciss Idq = 400 mA 100 17 Gp (dB) C (pF) Idq = 250 mA Coss 16 15 10 14 Crss 13 Vdd = 26 V 12 1 0 2 4 6 8 1 10 12 14 16 18 20 22 24 26 28 30 Vds (V) Efficiency Vs Output Power 10 100 Pout (W) Ouput Power Vs Drain Voltage 90 70 80 60 70 50 40 Pout (W) Nd (%) 60 30 50 40 30 20 20 10 10 Vdd = 26 V Idq = 250 mA 0 10 20 30 40 50 Pout (W) 4/10 Pin = 2.5 W Idq = 250 mA 0 0 60 70 80 90 10 12 14 16 18 20 22 Vdd (V) 24 26 28 30 32 LET9060S TYPICAL PERFORMANCE (BROADBAND) Efficiency Vs Frequency 20 80 19 75 18 70 17 65 Nd (%) Gp (dB) Power Gain Vs Frequency 16 60 15 55 14 50 13 Vdd = 26 V Idq = 250 mA Pout = 60 W 12 910 920 Vdd = 26 V Idq = 250 mA Pout = 60 W 45 930 940 950 960 970 40 910 920 930 940 950 960 970 f (MHz) f (MHz) Input Return Loss Vs Frequency 0 -4 RL (dB) -8 -12 -16 Vdd = 26 V Idq = 250 mA Pout = 60 W -20 910 920 930 940 950 960 970 f (MHz) 5/10 LET9060S TEST CIRCUIT SCHEMATIC VGG + + + + RF IN VD D RF OUT TEST CIRCUIT COMPONENT PART LIST COMPONENT C1, C8, C9, C13 C2, C7 C3, C4, C5, C6 C10 C11, C15 C12 C14 C16 R1 R2 R3 FB1, FB2 L1, L2 6/10 DESCRIPTION 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10µF / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220µF / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 18KΩ, 1W SURFACE MOUNT CHIP RESISTOR 4.7MΩ, 1W SURFACE MOUNT CHIP RESISTOR 120Ω, 2W SURFACE MOUNT CHIP RESISTOR SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE LET9060S TEST CIRCUIT 4 inches TEST CIRCUIT PHOTOMASTER PD57030S 6.4 inches 7/10 LET9060S TAPE & REEL DIMENSIONS mm 8/10 MIN. TYP. MAX Ao 17.9 18.0 18.1 Bo 9.7 9.8 9.9 Ko 4.15 4.25 4.35 K1 3.6 3.7 3.8 F 11.4 11.5 11.6 P1 23.9 24.0 24.1 W 23.7 24.0 24.3 LET9060S PowerSO-10RF Straight Lead MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 a MIN. 0.2 TYP. MAX 0.007 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 F 5.9 6.1 0.5 6.3 0.231 0.24 0.019 0.247 G 1.2 0.047 R1 R2 0.25 0.8 0.031 0.01 T1 6 deg 6 deg T2 10 deg 10 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 9/10 LET9060S Information furnished is believed to be accurate and reliable. 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