PD55015 - PD55015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 13.5 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD55015 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55015’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD55015 PD55015 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD55015S XPD55015S ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 40 V V GS Gate-Source Voltage ±20 V 5 A Power Dissipation (@ Tc = 70 C) 73 W Max. Operating Junction Temperature 165 0C -65 to 165 0C ID PDISS Tj TSTG Drain Current 0 Storage Temperature THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Resistance 1.3 0 C/W 1/10 PD55015 - PD55015S ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC Symbol Parameter Min. Typ. Max. Unit IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA V GS(Q) VDS = 10 V ID = 150 mA 5.0 V VDS(ON) VGS = 10 V ID = 2.5 A 0.8 V gFS VDS = 10 V ID = 2.5 A C ISS VGS = 0 V VDS = 12.5 V COSS VGS = 0 V C RSS VGS = 0 V 2.0 2.0 2.5 mho f = 1 MHz 89 pF VDS = 12.5 V f = 1 MHz 60 pF VDS = 12.5 V f = 1 MHz 6.5 pF DYNAMIC Symbol Parameter Min. Typ. Max. Unit POUT f = 500 MHz VDD = 12.5 V IDQ = 150 mA GPS f = 500 MHz VDD = 12.5 V POUT = 15 W IDQ = 150 mA 13.5 dB ηD f = 500 MHz VDD = 12.5 V POUT = 15 W IDQ = 150 mA 50 % f = 500 MHz VDD = 15.5 V ALL PHASE ANGLES POUT = 15 W IDQ = 150 mA LOAD Mismatch 15 W 20:1 VSWR D PIN CONNECTION SOURCE ZDL GATE Typical Input Impedance DRAIN Typical Drain Load Impedance G Zin SC15200 IMPEDANCE DATA PD55015S PD55015 2/10 S SC13140 Frequency MHz Zin Zdl Ω Frequency MHz Zin Zdl 480 2.13 - j1.09 1.55 + j.34 480 1.43 - j1.27 1.47 + j.65 500 1.95 - j.31 1.63 - j.25 500 1.62 - j1.05 1.49 + j.58 520 1.83 - j.70 1.43 + j.30 520 1.57 - j.91 1.35 +j.36 Ω Ω Ω PD55015 - PD55015S TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Drain Current vs. Gate Voltage 4 1000 Id, DRAIN CURRENT (A) C, CAPACITANCE (pF) 3.5 Ciss 100 Coss 10 Crss 3 2.5 2 1.5 1 VDS= 10V 0.5 f=1MHz 1 0 0 5 10 15 20 25 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 3 3.5 4 4.5 5 Vgs, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Gate-Source Volatge vs. Case Temperature 1.04 1.02 ID = 3A ID = 2A 1 ID = 1.5A 0.98 ID = 1A VDS = 10V ID = .25A 0.96 -25 0 25 50 75 Tc, CASE TEMPERATURE (°C) 3/10 PD55015 - PD55015S TYPICAL PERFORMANCE PD55015 Output Power vs. Input Power Power Gain vs. Output Power 18 18 480MHz 520MHz 16 14 Gp, POWER GAIN (dB) Pout, OUTPUT POWER (W) 16 12 500MHz 10 8 6 4 480MHz 14 500MHz 520MHz 12 10 VDD =12.5V IDQ =150mA VDD =12.5V IDQ=150mA 2 8 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 2 4 Pin, INPUT POWER (W) 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) Drain Efficiency vs. Output Power Return Loss vs. Output Power 70 0 480MHz 480MHz 50 Rtl, RETURN LOSS (dB) Nd, DRAIN EFFICIENCY (%) 60 500MHz 40 520MHz 30 20 -10 500MHz -20 520MHz -30 VDD=12.5V IDQ=150mA 10 VDD =12.5V IDQ =150mA 0 -40 0 2 4 6 8 10 12 14 16 18 0 2 4 Pout, OUTPUT POWER (W) 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) Output Power vs. Bias Current Drain Efficiency vs. Bias Current 20 70 500MHz 18 Nd, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (W) 480MHz 500MHz 16 520MHz 14 12 10 480MHz 520MHz 50 40 VDD =12.5V Pin=0.8W VDD =12.5V Pin=0.8W 30 8 0 200 400 600 800 Idq, BIAS CURRENT (mA) 4/10 60 1000 0 200 400 600 800 Idq, BIAS CURRENT (mA) 1000 PD55015 - PD55015S TYPICAL PERFORMANCE Output Power vs. Drain Voltage Drain Efficency vs. Drain Voltage 25 70 500MHz Nd, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (W) 500MHz 20 480MHz 520MHz 15 10 5 60 480MHz 520MHz 50 40 Idq=150mA Pin=0.8W Idq=150mA Pin=0.8W 30 0 7 8 9 10 11 12 13 14 15 16 7 17 8 9 VDS, DRAIN-SOURCE VOLTAGE (V) Output Power vs. Gate Bias Voltage 11 12 13 14 15 16 17 PD55015S Output Power vs. Input Power 20 18 480MHz 15 520MHz 10 480MHz 16 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 10 VDS, DRAIN-SOURCE VOLTAGE (V) 500MHz 5 VDD =12.5V Pin=0.8W 14 520MHz 12 10 500MHz 8 6 4 VDD =12.5V IDQ =150mA 2 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 VGS, GATE BIAS VOLTAGE (V) 0.6 0.8 1 1.2 Pin, INPUT POWER (W) Power Gain vs. Output Power Drain Efficiency vs. Output Power 18 70 500MHz 480MHz Nd, DRAIN EFFICIENCY (%) Gp, POWER GAIN (dB) 60 500MHz 16 14 520MHz 12 10 VDD =12.5V IDQ =150mA 480MHz 50 520MHz 40 30 20 VDD =12.5V IDQ =150 mA 10 0 8 0 2 4 6 8 10 12 14 Pout, OUTPUT POWER (W) 16 18 0 2 4 6 8 10 12 14 16 18 Pout, OUTPUT POWER (W) 5/10 PD55015 - PD55015S TYPICAL PERFORMANCE Return Loss vs. Output Power Output Power vs. Bias Current 20 -10 Pout, OUTPUT POWER (W) Rtl, RETURN LOSS (dB) 0 500MHz 480MHz 520MHz -20 -30 520MHz 18 480MHz 16 500MHz 14 520MHz 12 VDD =12.5V Pin=0.5 W 10 VDD =12.5V IDQ =150mA -40 8 0 2 4 6 8 10 12 14 16 18 0 200 400 Pout, OUTPUT POWER (W) 600 800 1000 Idq, BIAS CURRENT (mA) Drain Efficiency vs. Bias Current Output Power vs. Drain Voltage 70 25 Pout, OUTPUT POWER (W) Nd, DRAIN EFFICIENCY (%) 480MHz 60 480MHz 500MHz 50 520MHz 40 20 500MHz 15 520MHz 10 5 Idq=150mA Pin=0.5W VDD =12.5V Pin=0.5W 30 0 0 200 400 600 800 1000 7 8 9 Idq, BIAS CURRENT (mA) 10 11 12 13 Drain Efficency vs. Drain Voltage 16 17 20 480MHz Pout, OUTPUT POWER (W) 500MHz 60 520MHz 50 40 480MHz 15 500MHz 520MHz 10 5 VDD =12.5V Pin=0.5W Idq=150mA Pin=0.5W 0 30 7 8 9 10 11 12 13 14 15 16 VDS, DRAIN-SOURCE VOLTAGE (V) 6/10 15 Output Power vs. Gate Bias Voltage 70 Nd, DRAIN EFFICIENCY (%) 14 VDS, DRAIN-SOURCE VOLTAGE (V) 17 0 0.5 1 1.5 2 2.5 VGS, GATE BIAS VOLTAGE (V) 3 3.5 PD55015 - PD55015S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST B1,B2 FERRITE BEAD R2 1 kΩ, 1W CHIP RESISTOR C1,C12 300pF, 100 mil CHIP CAPACITOR R3 33 kΩ, 1W CHIP RESISTOR C2,C3,C4,C11, C12,C13 1 TO 20 pF TRIMMER CAPACITOR Z1 0.471” X 0.080” MICROSTRIP C6,C18 pF 100 mil CHIP CAP Z2 1.082” X 0.080” MICROSTRIP C9,C15 10µF, 50V ELECTROLYTIC CAPACITOR Z3 0.372” X 0.080” MICROSTRIP C8,C16 0.1mF, 100 mil CHIP CAP Z4,Z5 0.260” X 0.223” MICROSTRIP C7,C17 1,000pF 100 mil CHIP CAP Z6 0.050” X 0.080” MICROSTRIP C5, C10 33pF, 100 mil CHIP CAP Z7 0.551” X 0.080” MICROSTRIP L1 56nH, 7 TURN, COILCRAFT Z8 0.825” X 0.080” MICROSTRIP N1,N2 TYPE N FLANGE MOUNT Z9 0.489” X 0.080” MICROSTRIP ROGER, ULTRA LAM 2000 R1 15 Ω, 1W CHIP RESISTOR BOARD THK 0.030” εr = 2.55 2oz ED Cu 2 SIDES 7/10 PD55015 - PD55015S TEST CIRCUIT 4 inches TEST CIRCUIT PHOTOMASTER 6.4 inches 8/10 PD55015 - PD55015S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 9/10 PD55015 - PD55015S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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