LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF (straight lead) • HIGH GAIN ORDER CODE LET9045S • ESD PROTECTION BRANDING LET9045S • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9045S’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V 5 A ID PDISS Tj TSTG Drain Current Power Dissipation 160 W Max. Operating Junction Temperature 165 °C -65 to +150 °C 0.85 °C/W Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance February, 27 2003 1/9 LET9045S ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol Test Conditions V(BR)DSS VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 28 V IGSS VGS = 5 V VGS(Q) VDS = 28 V ID = 250 mA VDS(ON) VGS = 10 V ID = 3 A Min. Typ. Max. 65 Unit V 1 µA 1 µA 5.0 V VDS = 0 V 2.0 0.6 V GFS VDS = 10 V ID = 3 A CISS VGS = 0 V VDS = 28 V f = 1 MHz 60 pF COSS VGS = 0 V VDS = 28 V f = 1 MHz 33 pF CRSS VGS = 0 V VDS = 28 V f = 1 MHz 2.2 pF 2.0 mho DYNAMIC (f = 945 MHz) Symbol Test Conditions GP VDD = 28 V IDQ = 250 mA POUT = 45 W PEP ηD VDD = 28 V IDQ = 250 mA POUT = 45 W PEP IMD3 VDD = 28 V IDQ = 250 mA POUT = 45 W PEP P1dB VDD = 28 V IDQ = 250 mA GP VDD = 28 V IDQ = 250 mA ηD Load mismatch Min. Typ. Max. 17 Unit dB 44 % -28 dBc 60 W POUT = 45 W 17.8 dB VDD = 28 V IDQ = 250 mA POUT = 45 W 59 % VDD = 28 V IDQ = 250 mA ALL PHASE ANGLES POUT = 45 W 10:1 VSWR DYNAMIC (f = 925 - 960 MHz) Symbol Test Conditions Min. Typ. Max. P1dB VDD = 28 V IDQ = 250 mA 55 W GP VDD = 28 V IDQ = 250 mA POUT = 45 W 17.2 dB ηD VDD = 28 V IDQ = 250 mA POUT = 45 W 55 % ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 2 Machine Model M3 MOISTURE SENSITIVITY LEVEL Test Methodology J-STD-020B 2/9 Unit Rating MSL 3 LET9045S TYPICAL PERFORMANCE Power Gain Vs Output Power Power Gain Vs Output Power 1000 20 f = 1 MHz 19 Idq = 600 mA Idq Idq = = 400 100 mA mA 18 Idq = 250 mA 100 Ciss Idq = 100 mA Gp (dB) C (pF) 17 Coss 16 15 10 14 Crss 13 1 Vdd = 28 V f = 945 MHz 12 0 2 4 6 8 1 10 12 14 16 18 20 22 24 26 28 30 Vds (V) Efficiency Vs Output Power 10 100 Pout (W) Ouput Power Vs Drain Voltage 70 90 80 60 Pin = 1.5 W 70 50 40 Pout (W) Nd (%) 60 30 Pin = 1 W 50 40 30 20 20 Vdd = 28 V Idq = 250 mA f = 945 MHz 10 Idq = 250 mA f = 945 MHz 10 0 0 0 10 20 30 40 50 60 70 Pout (W) 10 12 14 16 18 20 22 24 26 28 30 32 Vdd (V) Drain Current Vs Gate-Source Voltage 1.5 Idq (A) 1.0 0.5 Vdd = 28 V 0.0 0 1 2 3 4 5 Vgs (V) 3/9 LET9045S TYPICAL PERFORMANCE (BROADBAND) Power Gain Vs Frequency Efficiency Vs Frequency 20 80 75 18 70 Nd (%) Gp (dB) 65 16 60 55 14 50 Vdd = 28 V Pout = 50 W Idq = 250 mA 12 910 920 930 940 950 960 970 f (MHz) 0 -4 RL (dB) -8 -12 -16 Vdd = 28 V Idq = 250 mA Pout = 50 W 920 930 940 f (MHz) 4/9 40 910 920 930 940 f (MHz) Input Return Loss Vs Frequency -20 910 Vdd = 28 V Idq = 250 mA Pout = 50 W 45 950 960 970 950 960 970 LET9045S TEST CIRCUIT SCHEMATIC VGG + + + + RF IN VD D RF OUT TEST CIRCUIT COMPONENT PART LIST COMPONENT C1, C8, C9, C13 C2, C7 C3, C4, C5, C6 C10 C11, C15 C12 C14 C16 R1 R2 R3 FB1, FB2 L1, L2 DESCRIPTION 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10µF / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220µF / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 18KΩ, 1W SURFACE MOUNT CHIP RESISTOR 4.7MΩ, 1W SURFACE MOUNT CHIP RESISTOR 120Ω, 2W SURFACE MOUNT CHIP RESISTOR SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE 5/9 LET9045S TEST CIRCUIT 4 inches TEST CIRCUIT PHOTOMASTER PD57030S 6.4 inches 6/9 LET9045S TAPE & REEL DIMENSIONS mm MIN. TYP. MAX Ao 17.9 18.0 18.1 Bo 9.7 9.8 9.9 Ko 4.15 4.25 4.35 K1 3.6 3.7 3.8 F 11.4 11.5 11.6 P1 23.9 24.0 24.1 W 23.7 24.0 24.3 7/9 LET9045S PowerSO-10RF Straight Lead MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 a MIN. 0.2 TYP. 0.007 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 F 5.9 6.1 0.5 6.3 0.231 0.24 0.019 0.247 G 1.2 0.047 R1 R2 0.25 0.8 0.031 0.01 T1 6 deg 6 deg T2 10 deg 10 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 8/9 MAX LET9045S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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