BCR1AM-12 Triac Low Power Use REJ03G0344-0100 Rev.1.00 Aug.20.2004 Features • • • • • Non-Insulated Type • Glass Passivation Type IT (RMS) : 1 A VDRM : 600 V IFGTI , IRGTI, IRGTⅢ : 5 mA (3 mA)Note5 IFGTⅢ : 10 mA Outline TO-92 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 6 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR1AM-12 Parameter RMS on-state current Symbol IT (RMS) Ratings 1.0 Unit A Surge on-state current ITSM 10 A I2 t 0.41 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.23 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Conditions Commercial frequency, sine full wave 360° conduction, Tc = 56°CNote3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Symbol Rated value Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 0.5 mA On-state voltage VTM — — 1.6 V Tc = 25°C, ITM = 1.5 A, Instantaneous measurement Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 2.0 2.0 2.0 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω ΙV Ι ΙΙ ΙΙΙ ΙV VFGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ IFGTΙΙΙ — — — — — — — — — — 2.0 5 5Note5 5Note5 10 V mA mA mA mA VGD Rth (j-c) (dv/dt)c 0.1 — 2 — — — — 50 — V °C/W V/µs Gate trigger voltageNote2 Note2 Gate trigger current Gate non-trigger voltage Thermal resistance Tj = 125°C, VDRM applied Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT ≤ 3 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.5 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 2 of 6 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR1AM-12 Performance Curves 102 7 Tj = 25°C 5 3 2 Rated Surge On-State Current 10 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Current vs. Junction Temperature PG(AV) = 0.1W VGM = 6V PGM = 1W IGM = 0.5A IFGT III VGD = 0.1V Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics 103 7 5 4 3 2 Typical Example IFGT I, IRGT I 102 7 5 4 3 2 IRGT III, IFGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 103 7 5 4 3 2 Typical Example VFGT I, VRGT I VRGT III,VFGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 6 Transient Thermal Impedance (°C/W) Gate Voltage (V) 2 Conduction Time (Cycles at 60Hz) 10–2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 4 On-State Voltage (V) 100 7 5 3 IFGT I 2 IRGT I IRGT III –1 10 7 5 3 2 102 7 5 4 3 2 6 0 100 10–1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 101 7 5 3 2 8 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 Junction to ambient 102 7 5 Junction to case 3 2 101 7 5 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR1AM-12 Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 1.2 0.8 0.4 0 360° Conduction Resistive, inductive loads 0 0.8 1.2 1.6 2.0 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 120 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS On-State Current (A) 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Latching Current vs. Junction Temperature Holding Current vs. Junction Temperature 103 7 5 4 3 2 Typical Example Latching Current (mA) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Curves apply regardless of conduction angle RMS On-State Current (A) 140 0 140 RMS On-State Current (A) 160 Ambient Temperature (°C) 0.4 Case Temperature (°C) 1.6 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) 2.0 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 4 of 6 103 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ T2–, G– Typical Example T2–, G+ 100 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR1AM-12 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 101 7 5 4 3 2 Typical Example Tj = 125°C 140 120 I Quadrant 100 80 60 40 III Quadrant 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width III Quadrant Minimum Characteristics Value I Quadrant 10–1 –1 10 160 Rate of Rise of Off-State Voltage (V/µs) Typical Example Tj = 125°C IT = 1A τ = 500µs VD = 200V 100 7 5 4 3 2 Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature 2 3 4 5 7 100 2 3 4 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) 6Ω A 6V V A 6V 330Ω 330Ω V Test Procedure I Test Procedure II 6Ω 6Ω A 6V V 330Ω Test Procedure III Rev.1.00, Aug.20.2004, page 5 of 6 102 7 5 4 3 2 101 0 10 Typical Example IFGT I IFGT III IRGT III IRGT I 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 103 7 5 4 3 2 A 6V V 330Ω Test Procedure IV BCR1AM-12 Package Dimensions TO-92 EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms 0.23 Cu alloy φ 5.0 max 11.5 min 5.0 max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ 0.7 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name – Lead forming code Form A8 Taping 2000 Type name – TB Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example BCR1AM-12 BCR1AM-12-A6 BCR1AM-12-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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