RENESAS 2SK2734

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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contained therein.
2SK2734
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-520 (Z)
1st. Edition
Jun 1997
Features
• Low on-resistance
R DS(on) = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A)
• 4V gate drive devices.
• Large current capacitance
ID = 5 A
Outline
TO-92MOD.
D
G
3
S
2
1
1. Source
2. Drain
3. Gate
2SK2734
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
5
A
20
A
Body to drain diode reverse drain current I DR
5
A
Channel dissipation
Pch
0.9
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Drain peak current
Note:
I D(pulse)*
1
1. PW ≤ 10µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1mA, VDS = 10V
Static drain to source on state
RDS(on)
—
0.04
0.055
Ω
I D = 2.5A, VGS = 10V*1
resistance
RDS(on)
—
0.055
0.08
Ω
I D = 2.5A, VGS = 4V*1
Forward transfer admittance
|yfs|
4
7
—
S
I D = 2.5A, VDS = 10V*1
Input capacitance
Ciss
—
550
—
pF
VDS = 10V
Output capacitance
Coss
—
380
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
155
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
14
—
ns
VGS = 10V, ID = 2.5A
Rise time
tr
—
80
—
ns
RL = 4Ω
Turn-off delay time
t d(off)
—
80
—
ns
Fall time
tf
—
65
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I F = 5A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
40
—
ns
I F = 5A, VGS = 0
diF/ dt = 50A/µs
Note:
2
1. Pulse test
2SK2734
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
I D (A)
0.8
0.4
100 µs
PW 1
m
s
=
3
1
(1 0 m
sh s
DC
ot
1
Op
)
er
a
tio
0.3 Operation in
n
this area is
0.1 limited by R DS(on)
0.03
50
100
150
Ambient Temperature
10
200
Ta (°C)
Ta = 25°C
0.01
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
10 V 5 V
4V
3.5 V
V DS = 10 V
Pulse Test
Pulse Test
(A)
8
Typical Transfer Characteristics
5
ID
I D (A)
10 µs
10
Drain Current
1.2
0
Drain Current
30
6
3V
4
2
Drain Current
Channel Dissipation
Pch (W)
1.6
4
3
25°C
2
Tc = 75°C
–25°C
1
VGS = 2.5 V
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
4
5
V GS (V)
3
2SK2734
0.4
0.3
Static Drain to Source on State Resistance
R DS(on) ( Ω)
ID=5A
0.2
2.5 A
1A
12
4
8
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
ID=5A
0.08
0.06
V GS = 4 V
1, 2.5 A
1, 2.5, 5 A
0.04
10 V
0.02
0
–40
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
VGS = 4 V
0.05
0.1
0
4
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
10 V
0.02
0.01
0.1
0.3
1
3
Drain Current
10
30
I D (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Drain to Source on State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
V DS = 10 V
Pulse Test
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
0.1
0.2
1
2
5
0.5
Drain Current I D (A)
10
2SK2734
Body to Drain Diode Reverse
Recovery Time
2000
di / dt = 50 A / µs, V GS = 0
Ta = 25 °C, Pulse Test
200
1000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
Typical Capacitance vs.
Drain to Source Voltage
100
50
20
10
100
Crss
50
VGS = 0
f = 1 MHz
10
5
0.5
Reverse Drain Current
1
2
0
5
I DR (A)
40
30
16
V DD = 5 V
10 V
20 V
V DS
20
10
0
12
V GS
V DD = 20 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
8
4
0
40
Switching Time t (ns)
I D = 5A
500
V GS (V)
20
Gate to Source Voltage
50
10
20
30
40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V)
Coss
200
20
0.01 0.02 0.05 0.1 0.2
Drain to Source Voltage
Ciss
500
Switching Characteristics
200
t d(off)
100
50
20
tf
tr
t d(on)
10 V
GS = 10 V, V DD = 10 V
PW = 2 µs, duty < 1 %
5
0.5
1
0.05 0.1 0.2
2
Drain Current I D (A)
5
5
2SK2734
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
10
8
10 V
5V
6
V GS = 0, –5 V
4
2
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
D=1
1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
θ ch – a(t) = γ s (t) • θ ch – a
θ ch – a = 139 °C/W, Ta = 25 °C
0.02
0.01
0.01
0.003
Ta = 25°C
t
1sho
PDM
e
puls
D=
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
100 m
Pulse Width
6
1
10
PW (S)
100
1000
10000
2SK2734
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
2SK2734
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
8
TO-92 Mod
—
Conforms
0.35 g
2SK2734
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
:
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:
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
9