To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI IGBT MITSUBISHI IGBT CY20AAJ-8 CY20AAJ-8 IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8 OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES ............................................................................... 400V ● ICM ................................................................................... 130A ● Drive voltage ..................................................................... 4V ➀ ➁ ➂ EMITTER ➃ GATE ➄ ➅ ➆ ➇ COLLECTOR ➀➁➂ SOP-8 APPLICATION Strobe flasher for Camera MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VCES VGES VGEM Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage VGE = 0V VCE = 0V VCE = 0V, tw = 10s ICM Tj Tstg Collector current (Pulsed) Junction temperature Storage temperature CM = 400µF see figure1 Ratings Unit 400 ±6 ±8 V V V 130 –40 ~ +150 –40 ~ +150 A °C °C Sep. 2001 MITSUBISHI IGBT CY20AAJ-8 Nch IGBT for STROBE FLASHER ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter V (BR) CES Collector-emitter breakdown voltage ICES IGES Collector-emitter leakage current Gate-emitter leakage current IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±6V, VCE = 0V VGE (th) Gate-emitter threshold voltage VCE = 10V, IC = 1mA Limits Test conditions Unit Min. Typ. Max. 450 — — — — — — 10 ±0.1 V µA µA — — 1.5 V PULSE COLLECTOR CURRENT ICM (A) Figure1. MAXIMUM PULSE COLLECTOR CURRENT 160 120 CM = 400µF 80 40 0 0 2 4 6 8 GATE-EMITTER VOLTAGE VGE (V) APPLICATION EXAMPLE TRIGGER SIGNAL Vtrig IXe CM IGBTE GATE VG VOLTAGE + Vtrig – VCM RG VCE Xe TUBE CURRENT VG IXE IGBT Recommended operation conditions Maximum operation conditions VCM = 350V VCM = 330V ICP = 120A ICP = 130A CM = 400µF CM = 300µF VGE = 5V Notice 1. Gate drive voltage during on-state must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 0.1A. (In general, when RG (off) = 30Ω, it is satisfied.) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to give static electricity. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 130A : full luminescence condition) of main condenser (CM = 400µF). Repetitive period under the full luminescence conditions is over 3 seconds. Notice 4. Total gate operation time must be applied within 5,000 hours. Sep. 2001