To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR ARY N I M I L CT15SM-24 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som PRE GENERAL INVERTER • UPS USE CT15SM-24 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VCES ............................................................................. 1200V ¡IC ......................................................................................... 15A ¡High Speed Switching ¡Low VCE Saturation Voltage q GATE w COLLECTOR e EMITTER r COLLECTOR q e TO-3P APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg — (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Conditions 1200 ±20 Unit V V VCE = 0V ±30 15 30 250 –40 ~ +150 V A A W °C –40 ~ +150 4.8 °C g Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight Ratings VGE = 0V VCE = 0V Typical value Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR ARY N I M I L . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som PRE CT15SM-24 GENERAL INVERTER • UPS USE ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter V (BR) CES Collector-emitter breakdown voltage Collector-emitter leakage current IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V Gate-emitter leakage current Gate-emitter threshold voltage VCE = 1200V, VGE = 0V IC = 1.5mA, VCE = 10V IC = 15A, VGE = 15V Limits Test conditions Unit Min. 1200 — — Typ. — — — Max. — ±0.5 1 VCE = 25V, VGE = 0V, f = 1MHz 4.5 — — — 6.0 2.7 1600 150 7.5 3.6 — — V V pF pF td (off) tf Turn-on delay time Rise time Turn-off delay time Fall time VCC = 600V, Resistance load, IC = 15A, VGE = 15V, RGE = 20Ω — — — — 45 50 150 150 — — — — pF ns ns ns Rth (j-c) Thermal resistance Junction to case — — 250 — — 0.50 ns °C/W IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance V µA mA PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 20V 15V COLLECTOR CURRENT IC (A) 20 Tj = 25°C 16 11V 12 10V 8 4 0 9V 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 8 6 4 IC = 30A 15A 2 0 10A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR ARY N I M I L . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som PRE CT15SM-24 GENERAL INVERTER • UPS USE VGE = 15V Tj = 25°C 4 3 2 1 0 0 4 8 12 16 VCE = 10V Tj = 25°C 16 12 8 4 0 20 8 12 16 20 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 Cies 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V Coes 3 tr 102 7 5 Cres 3 101 0 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 16 600V 12 8 4 40 60 80 GATE CHARGE Qg (nc) 100 2 3 5 7 101 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 TRANSIENT THERMAL IMPEDANCE Zth (j–c) VCC = 400V 20 Tj = 25°C VCC = 600V VGE = 15V RG = 20Ω COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 24 0 td(on) 2 f = 1MHZ 20 tf td(off) 2 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) 4 GATE-EMITTER VOLTAGE VGE (V) 103 0 0 COLLECTOR CURRENT IC (A) 104 7 5 3 2 101 COLLECTOR CURRENT IC (A) 5 COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 20 SWITCHING TIME (ns) CAPACITANCE Cies, Coes, Cres (pF) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 7 5 3 2 10–1 7 5 7 5 3 2 3 2 10–2 10–2 7 5 7 5 3 2 3 2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s) Feb.1999