Single N-channel MOSFET ELM34400AA-N ■General description ■Features ELM34400AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=10A Rds(on) < 12.5mΩ (Vgs=10V) Rds(on) < 20mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Symbol Limit Unit Vds Vgs 30 ±20 10 V V Id Ta=25°C Power dissipation Ta=70°C Junction and storage temperature range A 2.5 Pd Tj, Tstg A 8 50 Idm Note 3 W 1.6 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Steady-state Rθja ■Pin configuration Typ. Max. Unit 50 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4- 1 D G S Single N-channel MOSFET ELM34400AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Min. Ta=25°C Typ. Max. Unit Note 30 1.0 20 V 1.5 1 10 μA ±100 nA 2.5 V A Vgs=10V, Id=10A 9.5 12.5 mΩ 13.0 38 20.0 mΩ S Forward transconductance Gfs Vgs=4.5V, Id=5A Vds=15V, Id=10A Diode forward voltage Vsd If=1A, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=15V, f=1MHz 3100 600 pF pF Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Crss 275 pF Qg Qgs 43.0 9.0 Gate-drain charge Qgd Vgs=10V, Vds=15V, Id=10A 1 1 1 1.1 V 1 2.3 4.6 A A 3 60.0 7.0 nC nC 2 2 nC 2 Turn-on delay time Turn-on rise time td(on) tr Vgs=10V, Vds=15V, Id≈1A 15 9 30 20 ns ns 2 2 Turn-off delay time Turn-off fall time Body diode reverse recovery time td(off) Rl=25Ω, Rgen=6Ω tf trr If=2.3A, dl/dt=100A/μs 70 20 50 100 80 80 ns ns ns 2 2 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 Single N-channel MOSFET ELM34400AA-N ■Typical electrical and thermal characteristics 4- 3 Single N-channel MOSFET ELM34400AA-N 4- 4