PT4435 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 18mΩ RDS(ON), [email protected], [email protected] = 30mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D 8 7 1 F 6 2 S REF. A B C D E D S 3 S D 5 4 G Millimeter Min. Max. REF. Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 6.20 5.00 4.00 8° 0.90 M H L J K 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 0.19 0.25 G 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 ID -10.5 IDM -50 Parameter Continuous Drain Current Pulsed Drain Current o TA = 25 C Maximum Power Dissipation o TA = 75 C PD TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA Unit V A 2.5 W 1.2 o -55 to 150 50 o C C/W １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT4435 30V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Symbol Test Condition Min. Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA -30 Drain-Source On-State Resistance RDS(on) VGS = -10V, ID = -10.5A 15.0 18.0 Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -6.0A 20.0 30.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -1.4 -3 V Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 uA Gate Body Leakage IGSS VGS = ± 20V, VDS = 0V ± 100 nA gfs VDS = -10V, ID = -5A Parameter Typ. Max. Unit Static Forward Transconductance -1 V 21 mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V, ID = -9.1A VGS = 10V 37.2 9.84 nC 7.52 VDD = -15V, RL=15Ω ns ID = -1A, VGEN = -10V RG = 6Ω VDS = 8V, VGS = 0V f = 1.0 MHz 1740 225 pF 225 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD A IS = -2.1A, VGS = 0V 0.78 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT4435 30V P-Channel Enhancement Mode MOSFET ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５