AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, [email protected] < 28mΩ RDS(ON), [email protected], [email protected] < 33mΩ RDS(ON), [email protected], [email protected] < 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G A B C D E Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 F 0.45 REF. 0.55 S G H K J L Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 M 0° REF. 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current ID 5.8 Pulsed Drain Current IDM 30 Unit V A TA = 25oC Maximum Power Dissipation o 1.4 PD TA = 75 C Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) W 1 TJ, Tstg -55 to 150 RθJA 145 o o C/W １ JinYu semiconductor C www.htsemi.com Ｄａｔｅ：２０１１／０５ AO3400 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Test Condition Symbol Min. Typ. Miax. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 30 V Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 5.8A 22.0 28.0 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID =5A 27.0 33.0 Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID =4A 43.0 52.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V Forward Transconductance gfs VDS = 5V, ID = 5A 10 15 Gate Resistance Rg F=1.0MHz 6 7 7.5 11 14 0.7 mΩ 1.4 V 1 uA ±100 nA S Ω Dynamic Total Gate Charge Qg VDS = 15V, ID = 5.8A Gate-Source Charge Qgs nC 1.6 VGS = 4.5V Gate-Drain Charge Qgd Turn-On Delay Time td(on) 2.8 7 11 15 20 38 50 3 10 VDD = 15V, RL=2.7Ω Turn-On Rise Time tr ns ID = 1A, VGEN = 10V Turn-Off Delay Time td(off) RG = 3Ω Turn-Off Fall Time tf Input Capacitance Ciss 340 VDS = 10V, VGS = 0V Output Capacitance Coss pF 115 f = 1.0 MHz Reverse Transfer Capacitance Crss 33 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.6A, VGS = 0V 1.6 A 1.2 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ AO3400 30V N-Channel Enhancement Mode MOSFET Characteristics Curve ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５