ROHM RF04UA2D

Data Sheet
Super Fast Recovery Diode
RF04UA2D
Series
Standard Fast Recovery
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.9
Applications
High frequency rectification
0.35 0.45
1.0 min.
0.45 0.35
2.4
0.95
0.95
Features
1)Surface mounting type (TSMD6)
2)High reliability
0.7
0.8
TSMD6
Structure
(6)
(5)
(4)
(1)
(2)
(3)
Construction
Silicon epitaxial planer
Taping dimensions (Unit : mm)
φ1.55±0.1
0
2.0±0.05
0.3±0.1
4.0±0.1
3.2±0.08
Absolute maximum ratings (Ta=25C)
Parameter
Repetitive peak Reverse voltage
Reverse voltage
φ1.1±0.1
Conditions
Symbol
VRM
VR
Direct voltage
Average rectified forward current
Io/2
Glass epoxy substrate mounted Ta=25C
60Hz half sin wave,resistive load Tc=130C
Forward current surge peak
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Reverse recovery time
trr
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8.0±0.2
3.2±0.08
5.5±0.2
0～0.5
3.2±0.08
3.5±0.05
1.75±0.1
4.0±0.1
1.1±0.08
Limits
200
200
Unit
V
V
0.4
A
1
A
150
C
-40 to +150
C
(* Standard of per diode)
Conditions
IF=0.2A
VR=200V
IF=0.5A,IR=1A,Irr=0.25×IR
1/3
Min.
－
－
－
Typ.
0.86
0.01
11
Max.
0.98
10
25
Unit
V
A
ns
2011.05 - Rev.A
Data Sheet
RF04UA2D
Electrical characteristics curves
10
100
10000
f=1MHz
Tj=125C
1
Tj=25C
0.1
Tj=75C
Tj=75C
10
Tj=25C
1
10
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
1.3
50
100
150
880
860
850
REVERSE CURRENT : IR(nA)
1000
Tj=25C
IF=0.2A
n=30pcs
840
0
Tj=25C
VR=200V
n=30pcs
100
AVE:1.3nA
10
1
AVE : 851.3mV
VF DISPERSION MAP
10
8.3ms
AVE:10.2A
10
Ct DISPERSION MAP
10
1000
Tj=25°C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
25
20
15
AVE:10.2ns
10
5
0
0
IFSM DISRESION MAP
30
Tj=25°C
f=1MHz
VR=0V
n=10pcs
AVE:10.9pF
20
PEAK SURGE
FORWARD CURRENT : I FSM(A)
REVERSE RECOVERY TIME : trr(ns)
1cyc
25
0
30
Ifsm
20
30
IR DISPERSION MAP
30
15
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
0.1
830
20
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
870
1
200
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
0.3
FORWARD VOLTAGE : V F(mV)
Tj=125C
100
0.01
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Tj=150C
1000
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(A)
Tj=150C
Ifsm
8.3ms 8.3ms
100
1cyc
10
1
1
trr DISPERSION MAP
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Ifsm
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10000
30
t
100
10
AVE : 21.9kV
25
20
15
10
AVE : 3.9kV
5
0
1
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
1000
IM=10mA
1000
1ms
IF=1A
time
Rth(j-a)
300s
100
Rth(j-c)
10
On glass-epoxy board
1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.05 - Rev.A
Data Sheet
RF04UA2D
Io
0A
0V
t
0.35
0.25
T
D.C.
half sin wave
0.15
D=0.2
D=0.1
0.1
D=0.05
0.05
D.C.
0.25
D=0.8
0.2
half sin wave D=0.5
0.15
D=0.2
0.1
0.05
D=0.05
D=0.1
0
0
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
T
D.C.
D=t/T
VR=200V
Tj=150C
0.3
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
D=0.5
VR
t
0.35
0.3
D=0.8
0.2
Io
0A
0V
VR
D=t/T
VR=200V
Tj=150C
0.25
D=0.8
0.2
half sin wave
0.15
D=0.5
D=0.2
0.1
0.05
D=0.05
D=0.1
0
0
30
60
90
120
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
3/3
150
0
30
60
90
120
150
CASE TEMPARATURE : Tc(C)
Derating Curve(Io-Tc)
2011.05 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A