Data Sheet Super Fast Recovery Diode RF08L6S Dimensions (Unit : mm) Series Standard Fast Recovery Land size figure (Unit : mm) 2.0 ② 4.2 61 ① 0.1±0.02 0.1 5.0±0.3 6 8 4.5±0.2 Applications General rectification 1.2±0.3 2.0 2.6±0.2 PMDS Features 1)Small power mold type.（PMDS） 2)high switching speed 3)Low forward voltage 2.0±0.2 1.5±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date Construction Silicon epitaxial planar Taping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 0.3 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 φ1.55±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Tl=25°C) Parameter Symbol VRM Repetitive peak Reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Electrical characteristic (Tj=25°C) Parameter Symbol Conditions D≦0.5 Direct voltage Glass epoxy substrate mounted 60Hz half sin wave, Non-repetitive Ta=25°C one cycle peak value, Tj=25°C Tl=100°C Limits 600 600 0.8 Unit V V A 20 A 150 55 to 150 °C °C Conditions Min. Typ. Max. Unit Forward voltage VF IF=0.8A － 1 1.3 V Reverse current IR VR=600V － 0.01 10 μA trr IF=0.5A,IR=1A,Irr=0.25×I R － 50 70 ns Rth(j-l) junction to lead － － 23 °C/W Reverse recovery time Thermal Resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A 10000 Tj=125℃ 1 Tj=150℃ 0.1 Tj=25℃ Tj=75℃ 0.01 100 1000 100 Tj=75℃ 1 Tj=25℃ f=1MHz 10 1 0.1 0 500 1000 1500 0 2000 100 200 300 400 500 600 0 1000 AVE:999.5mV 950 Tj=25℃ VR=600V n=30pcs 10 AVE:7.35nA 1 50 30 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 60 1cyc 60 8.3ms 40 AVE:49.4A 20 0 1000 IF=0.5A IR=1A Irr=0.25*IR Tj=25℃ 55 50 45 AVE:48.8ns 40 35 PEAK SURGE FORWARD CURRENT:IFSM(A) 80 Ifsm Ifsm 10 1 30 100 ELECTROSTATIC DISCHARGE TEST ESD(KV) t 25 20 AVE：9.80kV 15 10 AVE：2.70kV 5 0 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2/3 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 1000 Ifsm 1 trr DISPERSION MAP IFSM DISRESION MAP 8.3ms 8.3ms 1cyc 100 30 1 AVE:44.2pF 40 0.1 900 30 f=1MHz VR=0V Tj=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR (nA) IF=0.8A Tj=25℃ n=30pcs 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 60 100 1100 1050 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) Tj=150℃ Tj=125℃ 10 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RF08L6S 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IM=10mA 100 IF=100mA Rth(j-a) 100 1m time 300us Rth(j-l) 10 1 On Glass Epoxi Board 0.1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 2011.05 - Rev.A Data Sheet RF08L6S Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.8 1.2 FORWARD POWER DISSIPATION:Pf(W) 1.8 D.C. D=0.5 half sin wave D=0.2 1 0.8 D=0.1 D=0.0 0.6 0.4 0.2 D.C. 1.6 D=0.8 D=0.5 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 T D=t/T VR=480V Tj=150℃ 1 half sin wave 0.8 D=0.2 0.6 0.4 D=0. 0.2 0 VR t 1.4 1.2 30 60 90 T 1.6 D=t/T VR=480V Tj=150℃ 1.4 D=0.8 1.2 D=0.5 1 half sin wave 0.8 0.6 0.4 D=0.2 D=0.1 D=0.05 0 120 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 3/3 t D.C. 0.2 D=0.0 0 0 1.8 Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.4 VR 150 0 30 60 90 120 LEAD TEMPARATURE:Tl(℃) Derating Curveﾞ(Io-Tl) 150 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A