ROHM RF2L6S

Data Sheet
Super Fast Recovery Diode
RF2L6S
Land size figure (Unit : mm)
2.0
Dimensions (Unit : mm)
Series
Standard Fast Recovery
Features
1)Small power mold type. (PMDS)
2)High switching speed
3)Low forward voltage
0.1±0.02
0.1
5.0±0.3
26
②
1.2±0.3
86
①
4.5±0.2
Applications
General rectification
4.2
2.0
2.6±0.2
PMDS
2.0±0.2
1.5±0.2
Structure
ROHM : PMDS
JEDEC : SOD-106


Manufacture date
Construction
Silicon epitaxial planar
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Tl=25C)
Parameter
Symbol
VRM
Repetitive peak Reverse voltage
VR
Reverse voltage
600
600
Unit
V
V
Io
1.5
A
IFSM
40
A
Average rectified forward
current(*1)
Forward current surge peak
(60Hz,1cyc,Tj=25C)
Junction temperature
Storage temperature
Limits
150
Tj
C
55 to 150
Tstg
C
(*1) Half sinwave on the Glass epoxy substrate (size : 50mm×50mm),Tc=90 CMax.
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
-
1.25
1.55
V
Forward voltage
VF
IF=1.5A
Reverse current
IR
VR=600V
-
0.03
10
μA
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×I R
-
20
35
ns
Rth (j-l)
junction to lead
-
-
23
C/W
Thermal Resistance
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.B
Data Sheet
RF2L6S
Electrical characteristics curves
10
10000
1000
Tj=125℃
Tj=150℃
0.1
Tj=25℃
Tj=75℃
0.01
1000
Tj=125℃
Tj=75℃
100
Tj=25℃
10
0.001
400
800
1200
1600
100
200
300
400
500
600
0
1000
1200
AVE:1209mV
1150
Ta=25℃
Tj=25℃
VR=200V
VR=600V
n=20pcs
n=30pcs
100
10
AVE:29.5ns
VF DISPERSION MAP
80
AVE:87.3pF
70
60
1cyc
8.3m
100
50
AVE:84.5A
1000
30
Tj=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
Ct DISPERSION MAP
AVE:20.1ns
10
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
REVERSE RECOVERY TIME:trr(ns)
Ifsm
150
50
IR DISPERSION MAP
250
Ifsm
10
1
16
100
14
12
10
8
6
AVE:5.14kV
AVE:3.46kV
4
2
0
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
IF=100mA
IM=10m
18
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
100
100
Mounted on epoxy board
1000
20
t
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
Ifsm
1
trr DISPERSION MAP
IFSM DISPERSION MAP
8.3ms 8.3ms
1cyc
100
0
0
30
f=1MHz
VR=0V
90
1
1100
200
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
Tj=25℃
IF=1.5A
n=20pcs
1250
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1300
FORWARD VOLTAGE:VF(mV)
10
1
0
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
1
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=150℃
1
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2/3
time
1m
Rth(j-a)
300u
10
Rth(j-l)
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
2011.05 - Rev.B
Data Sheet
RF2L6S
Io
0A
0V
D=0.8
1.8
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=0.5
1.6
half sin wave
1.4
D=0.2
D=0.1
1.2
D=0.05
1
0.8
0.6
0.4
0.2
0
VR
t
D.C.
2
D.C.
Io
0A
0V
2.5
D=0.8
T
D=t/T
VR=480V
Tj=150℃
D=0.5
1.5
half sin wave
1
D=0.2
0.5
D=0.1
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2.5
T
D=t/T
VR=480V
Tj=150℃
2.5
D=0.8
2
D=0.5
1.5
half sin wave
D=0.2
1
0.5
D=0.1
D=0.05
0
0
t
3
3
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
2
VR
D=0.05
0
0
30
60
90
120
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
3/3
150
0
30
60
90
120
150
LEAD TEMPARATURE:Tl(℃)
Derating Curveﾞ(Io-Tl)
2011.05 - Rev.B
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A