ROHM RF071L4S_11

Data Sheet
Super Fast Recovery Diode
RF071L4S
Dimensions(Unit : mm)
Land size figure(Unit : mm)
2.0
2.0
Series
Standard Fast Recovery
4.2
Applications
General rectification
PMDS
Features
1)Small power mold type.(PMDS)
2)high switching speed
3)Low forward voltage
Taping dimensions(Unit : mm)
4.0±0.1
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
Construction
Silicon epitaxial planer
Structure
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Tl=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics(Tj=25C)
Parameter
Forward voltage
Conditions
Limits
Unit
D0.5
Direct voltage
Glass epoxy substrate mounted Tl=120C
60Hz half sin wave, Non-repetitive
400
400
1
V
V
A
15
A
150
55 to 150
C
C
one cycle peak value, Tj=25C
Symbol
Conditions
Min.
Typ.
Max.
Unit
VF
IF=0.7A
-
1
1.25
V
μA
ns
Reverse current
IR
VR=400V
-
0.01
10
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×IR
Rth(j-l)
junction to lead
-
20
-
25
23
Thermal resistance
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
C/W
2011.05 - Rev.A
Data Sheet
RF071L4S
Electrical characteristics curves
1000
Tj=125C
Tj=150C
0.1
Tj=25C
Tj=75C
0.01
100
0.001
Tj=125C
10
Tj=75C
1
Tj=25C
0.1
500
1000
1500
0
1100
100
200
300
REVERSE CURRENT : IR(nA)
1000
AVE : 980.8mV
1
AVE : 4.2nA
10
15
20
25
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
VR=0V
Tj=25C
30
AVE : 29.2pF
20
IR DISPERSION MAP
Ct DISPERSION MAP
1000
30
REVERSE RECOVERY TIME : trr(ns)
1cyc
60
8.3ms
40
AVE : 41.2A
20
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
Tj=25C
15
AVE : 20.1ns
10
5
Ifsm
100
8.3ms
10
1
1
10
trr DISPERSION MAP
IFSM DISRESION MAP
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
100
10
Ifsm
t
25
AVE : 14.1kV
20
15
10
AVE : 3.40kV
0
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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100
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2/3
100
NUMBER OF CYCLES
I FSM-CYCLE CHARACTERISTICS
1000
5
1
8.3ms
1cyc
0
0
30
10
0.1
80
1
5
40
Tj=25C
VR=400V
n=30pcs
VF DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : I FSM(A)
0
TRANSIENT
THAERMAL IMPEDANCE : Rth (°C/W)
FORWARD VOLTAGE : V F(mV)
Tj=25C
n=30pcs
900
PEAK SURGE
FORWARD CURRENT : I FSM(A)
400
10
I F=0.7A
Ifsm
10
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1050
f=1MHz
1
2000
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
0
950
Tj=150C
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1
100
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(A)
10
IM=10mA
IF=100mA
Rth(j-a)
100
1ms
time
300s
Rth(j-l)
10
1
On Glass Epoxi Board
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.05 - Rev.A
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
half sin wave
D=0.5
D=0.2
D=0.1
0.6
Io
0V
VR
t
1.6
D=0.8
1
0A
D=0.05
0.4
0.2
D.C.
1.4
T
D=0.8
1.2
1
D=0.5
half sin wave
0.8
0.6
D=t/T
VR=320V
Tj=150C
D=0.2
0.4
0.2
D=0.05
D=0.1
0
0.3
0.6
0.9
1.2
1.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
1.8
0
30
60
90
120
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
3/3
150
Io
0V
VR
t
T
1.6
D=t/T
VR=320V
Tj=150C
D.C.
1.4
D=0.8
D=0.5
1.2
1
half sin wave
0.8
D=0.2
0.6
0.4
D=0.05
0.2
0
0
0A
1.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
1.8
1.2
0.8
Data Sheet
RF071L4S
D=0.1
0
0
30
60
90
120
150
LEAD TEMPARATURE : Tl(C)
Derating Curve"(Io-Tl)
2011.05 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A