ROHM RFN1L6S

Data Sheet
Super Fast Recovery Diode
RFN1L6S
Dimensions (Unit : mm)
Series
Standard Fast Recovery
Land size figure (Unit : mm)
2.0
①
Features
1)Small power mold type.(PMDS)
2)Low switching loss
3)Low forward voltage
0.1±0.02
0.1
②
PMDS
2.0±0.2
1.5±0.2
4.2
64
5.0±0.3
6
8
4.5±0.2
Applications
General rectification
1.2±0.3
2.0
2.6±0.2
Structure
ROHM : PMDS
JEDEC : SOD-106
①
Construction
Silicon epitaxial planer
②
Manufacture date
Taping dimensions (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (TI=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Reverse recovery time
Thermal resistance
Conditions
D≤0.5
Direct voltage
Glass epoxy substrate mounted
Tl=115°C
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
600
600
Unit
V
V
0.8
A
15
A
150
55 to 150
C
C
Max.
1.45
1
Conditions
IF=0.8A
VR=600V
Min.
-
-
Typ.
1.15
0.01
trr
IF=0.5A,IR=1A,Irr=0.25×I R
-
25
35
ns
Rth(j-l)
junction to lead
-
-
23
°C/W
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1/4
Unit
V
μA
2011.10 - Rev.A
Data Sheet
RFN1L6S
10000
10
Tj=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=150°C
1
Tj=125°C
0.1
Tj=75°C
1000
Tj=125°C
100
Tj=75°C
10
Tj=25°C
Tj=25°C
1
0.01
0
500
1000
1500
2000
0
2500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
200
400
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
1300
100
f=1MHz
Tj=25°C
IF=0.8A
n=20pcs
FORWARD VOLTAGE:VF(mV)
1250
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
600
10
1200
1150
1100
1050
AVE:1110mV
1000
950
1
900
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
40
Tj=25°C
VR=600V
n=20pcs
100
10
Tj=25°C
f=1MHz
VR=0V
n=10pcs
35
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
1000
AVE:14.8nA
30
25
AVE:28.5pF
20
15
1
10
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.10 - Rev.A
60
40
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
50
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RFN1L6S
8.3ms
40
30
20
AVE:21.4A
10
0
Tj=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
30
20
AVE:23.9ns
10
0
trr DISPERSION MAP
IFSM DISPERSION MAP
100
100
IFSM
8.3ms
t
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
1cyc
10
10
1
1
1
10
1
100
10
1000
25
20
AVE:10.2kV
15
10
AVE:1.55kV
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Rth(j-a)
On glass-epoxy substrate
soldering land 2mm□
100
Rth(j-l)
10
Rth(j-a)
On glass-epoxy substrate
soldering land 10mm□
1
5
0
C=200pF
R=0Ω
0.1
0.001
C=100pF
R=1.5kΩ
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
0.01
3/4
2011.10 - Rev.A
2.5
0.8
2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=0.5
half sin wave
D=0.2
1
0A
0
V
D=0.8
D=0.8
1.5
D.C.
0.7
D.C.
FORWARD POWER
DISSIPATION:Pf(W)
Data Sheet
RFN1L6S
D=0.1
D=0.05
0.6
D=0.5
half sin wave
0.5
D=0.2
Io
VR
t
D=t/T
VR=480V
T
Tj=150°C
On glass-epoxy
substrate soldering land 2mm□
0.4
D=0.1
0.3
D=0.05
0.2
0.5
0.1
0
0
0
0.5
1
0
1.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
1.4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
1.2
90
120
150
Io
VR
t
D=0.8
T
1
60
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
0A
0V
D.C.
30
D=t/T
VR=480V
Tj=150°C
D=0.5
0.8
half sin wave
0.6
D=0.2
0.4
D=0.1
0.2
D=0.05
0
0
30
60
90
120
150
CASE TEMPERATURE:Tl(°C)
DERATING CURVE (Io-Tl)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A