QJD1210SA2 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 10 11 12 X B M N E G DETAIL "B" 20 19 18 17 16 15 14 13 L T S R W DETAIL "A" V H K C T DETAIL "A" D2 (4 - 6) D1 (10 - 12) G2 (19 - 20) G1 (15 - 16) S2 (17 - 18) S1 (13 - 14) S2 (1 - 3) S1 (7 - 9) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.32 109.8 Q 0.449 11.40 B 2.21 56.1 R 0.885 22.49 C 0.71 18.0 S 1.047 26.6 D 3.70±0.02 94.0±0.5 T 0.15 3.80 E 2.026 51.46 U 0.16 4.0 F 3.17 80.5 V 0.30 7.5 G 1.96 49.8 W 0.045 1.15 H 1.00 25.5 X 0.03 0.8 K 0.87 22.0 Y 0.16 4.0 L 0.266 6.75 Z 0.47 12.1 M 0.26 6.5 AA N 0.59 15.0 P 0.586 14.89 0.17 Dia. 4.3 Dia. AB 0.10 Dia. 2.5 Dia. AC 0.08 Dia. 2.1 Dia. Features: £ Silicon Carbide Chips £ Low Internal Inductance £ Industry Leading RDS(on) £ High Speed Switching £ Low Switching Losses £ Low Capacitance £ Low Drive Requirement £ Fast 75A Free Wheeling Schottky Diode £ High Power Density £ Isolated Baseplate £ Aluminum Nitride Isolation £ 2 Individual Switches per Module £ AlSiC Baseplate £ RoHS Compliant Applications: £ Energy Saving Power Systems such as: £ High Frequency Type Power Systems such as: 12/14 Rev. 1 UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics £ High Temperature Power Systems such as: Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. Fans; Pumps; Consumer Appliances Power Electronics in Electric Vehicle and Aviation Systems 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210SA2 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQJD1210SA2 Units Drain-Source Voltage (VGS = -10V) VDSS1200 Volts Gate-Source Voltage (D-S Short) VGSS Drain Current (Continuous) at TC = 78°C ID ±20Volts 100Amperes Drain Current (Pulsed)*1ID(pulse)200Amperes Maximum Power Dissipation (TC = 25°C, Tj < 150°C) PD 415Watts Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Mounting Torque, M6 Mounting Screws — 40 in-lb Module Weight (Typical) — 140 Grams V Isolation Voltage VRMS3000 Volts *1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 12/14 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210SA2 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts MOSFET Characteristics, Tj = 25 °C unless otherwise specified Characteristics Drain-Source Leakage Current*2 Drain-Source Leakage Current*2 Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units IDSS VGS = -10V, VDS = 1200V — 100 — µA IDSS VGS = -10V, VDS = 1200V, Tj = 150°C µA IGSS — 200 — VDS = 0, VGS = ±20V — 1.0 —µA Gate Threshold Voltage VGS(th) VDS = 10V, ID = 34mA 0.4 1.0 1.6 Volts Drain-Source On Resistance (Chip) RDS(on) ID = 100A, VGS = 15V, Tj = 25°C — 17 — mΩ ID = 100A, VGS = 15V, Tj = 150°C — 29 — mΩ Drain-Source On Resistance (Terminal) RDS(on) ID = 100A, VGS = 15V, Tj = 25°C — 18 — mΩ ID = 100A, VGS = 15V, Tj = 150°C — 30 — mΩ QG VCC = 600V, ID = 100A, VGS = 0 to 15V — 330 — nC — 8.2 — nF — 2.7 — Total Gate Charge Input Capacitance Ciss Output Capacitance Coss VGS = 0, VDS = 10V, f = 100 kHz nF Reverse Transfer Capacitance Crss — 180 — pF Turn-on Delay Time td(on) — 90 —ns Rise Time tr Turn-off Delay Time VDD = 600V, ID = 100A, — 85 — VGS = ±15V, — 300 — ns td(off) Fall Time tf Turn-on Switching Energy Eon Turn-off Switching Energy Eoff RG = 18Ω, Tj = 150°C, Inductive Load — 85 — TBD — — TBD— ns ns — mJ mJ *2 Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 12/14 Rev. 1 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210SA2 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Diode Forward Voltage (Chip) Diode Forward Voltage (Terminal) Diode Capacitive Charge VSD VSD QC Test Conditions Min. Typ. Max. Units IF = 75A, VGS = -15V, Tj = 25°C — 1.45 1.75 Volts IF = 75A, VGS = -15V, Tj = 150°C — 1.95 2.35 Volts IF = 75A, VGS = -15V, Tj = 25°C — 1.55 1.85 Volts IF = 75A, VGS = -15V, Tj = 150°C — 2.05 2.45 Volts VR = 600V, IF = 75A, — 300 — nC — 35 — nS di/dt = 2200A/μs, Tj = 150°C Reverse Recovery Time trr VR = 600V, IF = 75A, di/dt = 2200A/μs, Tj = 150°C Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction-to-Case*3 Rth(j-c) MOSFET Part — — 0.29 °C/W Thermal Resistance, Junction-to-Case*3 Rth(j-c) Diode Part — — 0.47 °C/W Contact Thermal Resistance Rth(c-s) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W Lint MOSFET Part — Internal Inductance 10— nH *3 Case temperature (TC) and heatsink (TS) are defined on the surface of the baseplate and heatsink at just under the chip. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 12/14 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210SA2 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts TYPICAL OUTPUT CHARACTERISTICS (TYPICAL) NORMALIZED ON-RESISTANCE VS. TEMPERATURE 100 2.0 VGS = 20V 80 NORMALIZED ON-RESISTANCE DRAIN CURRENT, ID, (AMPERES) 90 70 60 50 40 30 Tj = 25°C Tj = 125°C Tj = 150°C 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.8 0.4 0 50 100 150 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) JUNCTION TEMPERATURE, Tj, (°C) TYPICAL CAPACITANCE VS. DRAIN-SOURCE VOLTAGE FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS (TYPICAL) 200 75 Ciss 1.0E-08 FORWARD CURRENT, IF, (μA) CAPACITANCE, Ciss, Coss, Crss, (F) TBD 1.2 0 3.5 1.0E-07 Coss 1.0E-09 Crss 1.0E-10 VGS = 20V f = 100 kHz 1.0E-11 0.1 1.6 1.0 10 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) 100 60 45 30 Tj = 25°C Tj = 125°C Tj = 150°C Tj = 175°C 15 0 0 0.5 1.0 1.5 2.0 2.5 3.0 FORWARD VOLTAGE, VF, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 12/14 Rev. 1 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210SA2 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts SWITCHING TIME CHARACTERISTICS (TYPICAL) 100 100 TBD 10 1 VDD = 600V VGS = ±15V RG = 18Ω Tj = 150°C Inductive Load 0 20 40 60 td(on) tr td(off) tf SWITCHING ENERGIES, Eon, Eoff, (mJ/PULSE) SWITCHING TIMES, td(on), tr, td(off), tf, (ns) 1000 SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VDD = 600V VGS = ±15V ID = 100A Tj = 150°C Inductive Load 10 Eon Eoff 1 80 100 120 140 160 0 10 DRAIN CURRENT, ID, (AMPERES) VDD = 600V VGS = ±15V RG = 18Ω Tj = 150°C Inductive Load 7 6 TBD 5 4 3 2 Eon Eoff 1 0 0 20 40 60 80 100 120 140 160 DRAIN CURRENT, ID, (AMPERES) 30 40 50 60 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) SWITCHING ENERGIES, Eon, Eoff, (mJ/PULSE) 10 8 20 GATE RESISTOR, RG, (Ω) SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 9 TBD -3 110 10 100 10-2 (MAXIMUM) 10-1 100 101 Single Pulse, TC = 25°C, Per Unit Base = Rth(j-c) = 0.29°C/W (MOSFET) Rth(j-c) = 0.47°C/W (Diode) 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 12/14 Rev. 1