QID1230015 Dual IGBT NX-Series Module 300A 1200V

QID1230015 Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBT
NX-Series Module
300 Amperes/1200 Volts
A
D
E
J
F
J
G
Y
(4 PLACES)
AD
AE
AF
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Q
ST
47
U
24
Z
R
S T
Q
48
U
AA B
AB
23
DETAIL "B"
1
W
V
X
M
L
2
3
4
5
6
7
8
N
K
AG
9 10 11 12 13 14 15 16 17 18 19 20 21 22
K
P
L
DETAIL "A"
AL
AM
AK
AT
AU
E1C2(24) E1C2(23)
AV
AW
Tr2
Di2
Di1
Tr1
G2(38)
E2(39)
AX
C
AR
AS
AP
C1(22)
E1(16)
AN
G1(15)
AQ
DETAIL "A"
E2
(47)
DETAIL "B"
AJ
AH
AC (4 PLACES)
C1
(48)
Th
NTC
TH1
(1)
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
TH2
(2)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
Millimeters
5.98
152.0
2.44
62.0
0.67
17.0
5.39
137.0
4.79
121.7
4.33±0.02 110.0±0.5
3.89
99.0
3.72
94.5
0.53
13.5
0.15
3.8
0.28
7.25
0.30
7.75
1.95
49.54
0.9
22.86
0.55
14.0
0.87
22.0
0.67
17.0
0.48
12.0
0.24
6.0
0.16
4.2
0.37
6.5
0.83
21.14
M6
M6
Dimensions
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53
39.0
1.97±0.02 50.0±0.5
2.26
57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.0217.0+1.0/-0.5
0.51
13.0
0.27
7.0
0.03
0.8
0.81
20.5
0.12
3.0
0.14
3.5
0.21
5.4
0.49
12.5
0.15
3.81
0.05
1.15
0.025
0.65
0.29
7.4
0.24
6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06
1.5
0.49
12.5
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ AlSiC Baseplate
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 1
1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBT NX-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
SymbolQID1230015Units
Power Device Junction Temperature
Tj
-40 to 150
°C
Tstg
-55 to 130
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M6 Main Terminal Screws
—
40
in-lb
—
220
Grams
Storage Temperature
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
VISO 2500Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short)
VCES 1200Volts
Gate-Emitter Voltage (C-E Short)
VGES ±20Volts
Collector Current (TC = 90°C)*
Peak Collector Current**
Emitter Current (TC = 25°C, Tj < 150°C)* Peak Emitter Current (Tj < 150°C)**
Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)*
IC
300Amperes
ICM
600Amperes
IE***
300Amperes
IEM***
600Amperes
PC
1580Watts
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
97.1
83.6
NTC Thermistor
39.4
FWDi
0
IGBT
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
17.3
47
24
26.5
30.8
30.8
37.4
Th
40.0
48
23
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
34.0
97.1
3
83.6
2
28.5
1
0
17.3
Dimensions in mm (Tolerance: ±1mm)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2
11/14 Rev. 1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBT NX-Series Module
300 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
VGE(th)
IC = 30mA, VCE = 10V
6
7
8
Volts
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
VCE(sat)
IC = 300A, VGE = 15V, Tj = 25°C
—
2.0
2.6
Volts
IC = 300A, VGE = 15V, Tj = 125°C
—
2.2
—
Volts
IC = 300A, VGE = 15V, Chip
—
1.9
—
Volts
—
—
47.0
nF
—
—
4.0
nF
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCE = 10V, VGE = 0V
—
—
0.9
nF
VCC = 600V, IC = 300A, VGE = 15V
—
1350
—
nC
—
—
550
ns
VCC = 600V, IC = 300A,
—
—
180
ns
Inductive
Turn-on Delay Time
td(on)
Load
Turn-on Rise Time
tr
Switch
Turn-off Delay Time
td(off)
VGE = ±15V,
—
—
600
ns
Time
Turn-off Fall Time
tf
RG = 1.0Ω, IE = 300A,
—
—
600
ns
Inductive Load Switching Operation
—
—
250
ns
—
8.0
—
µC
IE = 300A, VGE = 0V
—
2.6
3.4
Volts
IE = 300A, VGE = 0V, Chip
—
2.5
—
Volts
Reverse Recovery Time*
trr
Reverse Recovery Charge*
Qrr
Emitter-Collector Voltage*
VEC
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Module Lead Resistance
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rlead
Main Termnals-Chip (Per Switch)
—
1.2
—
mΩ
Thermal Resistance, Junction to Case**
Rth(j-c)Q
Per IGBT
—
—
0.079
°C/W
Thermal Resistance, Junction to Case**
Rth(j-c)D
Per FWDi
—
—
0.144
°C/W
Contact Thermal Resistance**
Rth(c-f)
Thermal Grease Applied
—
0.015
—
°C/W
Internal Gate Resistance
RGint
TC = 25°C
2.1
3.0
3.9
Ω
TC = 125°C
4.2
6.0
7.8
Ω
External Gate Resistance
RG
1.0
—
10
Ω
Test Conditions
Min.
Typ.
Max.
Units
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Zero Power Resistance
R
TC = 25°C
4.85
5.00
5.15
kΩ
Deviation of Resistance
∆R/R
TC = 100°C, R100 = 493Ω
–7.3
—
+7.8
%
B(25/50)
B(25/50) = In(R25 / R50) / (1/T25 – 1/T50)***
—
3375
—
K
P25
TC = 25°C
—
—
10
mW
B Constant
Power Dissipation
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**TC, Tf measured point is just under the chips.
***R25: Resistance at Absolute Temperature T25(K), R50: Resistance at Absolute Temperature T50(K),
T25 = 25(°C) +273.15 = 298.15(K), T50 = 50(°C) + 273.15 = 323.15(K)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 1
3
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBT NX-Series Module
300 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
600
13
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
12
300
11
200
100
10
9
0
2
4
6
8
100
0
200
300
400
500
8
IC = 600A
6
IC = 300A
4
IC = 120A
2
0
600
6
8
10
12
14
16
18
COLLECTOR-CURRENT, IC, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
Tj = 125°C
102
0
1
2
3
103
VGE = 0V
tf
Cies
Coes
101
100
102
tr
101
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
Cres
100
101
102
100
101
102
103
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
td(on)
103
td(off)
tf
tr
102
101
10-1
VCC = 600V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive Load
100
GATE RESISTANCE, RG, (Ω)
101
20
td(off)
td(on)
102
10-1
10-1
4
REVERSE RECOVERY, Irr (A), trr (ns)
EMITTER CURRENT, IE, (AMPERES)
1
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
SWITCHING TIME, (ns)
2
0
10
103
101
3
SWITCHING TIME, (ns)
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
20
102
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 25°C
Inductive Load
Irr
trr
101
100
101
102
EMITTER CURRENT, IE, (AMPERES)
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
500
400
4
Tj = 25°C
15
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
IC = 300A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
500
1000
1500
2000
GATE CHARGE, QG, (nC)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4
11/14 Rev. 1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBT NX-Series Module
300 Amperes/1200 Volts
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
100
101
102
103
102
VCC = 600V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive Load
Eon
Eoff
101
100
100
101
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
VCC = 600V
VGE = ±15V
IE = 300A
Tj = 125°C
Inductive Load
100
100
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
101
100
10-1
10-2
Err
101
GATE RESISTANCE, RG, (Ω)
102
102
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10-2
10-1
100
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
101
100
101
Err
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
102
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
103
102
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.066°C/W
(IGBT)
Rth(j-c) =
0.12°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 1
5