QID1230015 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1200 Volts A D E J F J G Y (4 PLACES) AD AE AF H 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q ST 47 U 24 Z R S T Q 48 U AA B AB 23 DETAIL "B" 1 W V X M L 2 3 4 5 6 7 8 N K AG 9 10 11 12 13 14 15 16 17 18 19 20 21 22 K P L DETAIL "A" AL AM AK AT AU E1C2(24) E1C2(23) AV AW Tr2 Di2 Di1 Tr1 G2(38) E2(39) AX C AR AS AP C1(22) E1(16) AN G1(15) AQ DETAIL "A" E2 (47) DETAIL "B" AJ AH AC (4 PLACES) C1 (48) Th NTC TH1 (1) *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 TH2 (2) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y Inches Millimeters 5.98 152.0 2.44 62.0 0.67 17.0 5.39 137.0 4.79 121.7 4.33±0.02 110.0±0.5 3.89 99.0 3.72 94.5 0.53 13.5 0.15 3.8 0.28 7.25 0.30 7.75 1.95 49.54 0.9 22.86 0.55 14.0 0.87 22.0 0.67 17.0 0.48 12.0 0.24 6.0 0.16 4.2 0.37 6.5 0.83 21.14 M6 M6 Dimensions Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX Inches Millimeters 1.53 39.0 1.97±0.02 50.0±0.5 2.26 57.5 0.22 Dia. 5.5 Dia. 0.67+0.04/-0.0217.0+1.0/-0.5 0.51 13.0 0.27 7.0 0.03 0.8 0.81 20.5 0.12 3.0 0.14 3.5 0.21 5.4 0.49 12.5 0.15 3.81 0.05 1.15 0.025 0.65 0.29 7.4 0.24 6.2 0.17 Dia. 4.3 Dia. 0.10 Dia. 2.5 Dia. 0.08 Dia. 2.1 Dia. 0.06 1.5 0.49 12.5 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ AlSiC Baseplate £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 1 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1230015 Dual IGBT NX-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolQID1230015Units Power Device Junction Temperature Tj -40 to 150 °C Tstg -55 to 130 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M6 Main Terminal Screws — 40 in-lb — 220 Grams Storage Temperature Module Weight (Typical) Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500Volts Inverter Sector Collector-Emitter Voltage (G-E Short) VCES 1200Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (TC = 90°C)* Peak Collector Current** Emitter Current (TC = 25°C, Tj < 150°C)* Peak Emitter Current (Tj < 150°C)** Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)* IC 300Amperes ICM 600Amperes IE*** 300Amperes IEM*** 600Amperes PC 1580Watts *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). CHIP LOCATION (TOP VIEW) Chip Location (Top View) 97.1 83.6 NTC Thermistor 39.4 FWDi 0 IGBT 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 17.3 47 24 26.5 30.8 30.8 37.4 Th 40.0 48 23 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 34.0 97.1 3 83.6 2 28.5 1 0 17.3 Dimensions in mm (Tolerance: ±1mm) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/14 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1230015 Dual IGBT NX-Series Module 300 Amperes/1200 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 30mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 2.0 2.6 Volts IC = 300A, VGE = 15V, Tj = 125°C — 2.2 — Volts IC = 300A, VGE = 15V, Chip — 1.9 — Volts — — 47.0 nF — — 4.0 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCE = 10V, VGE = 0V — — 0.9 nF VCC = 600V, IC = 300A, VGE = 15V — 1350 — nC — — 550 ns VCC = 600V, IC = 300A, — — 180 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE = ±15V, — — 600 ns Time Turn-off Fall Time tf RG = 1.0Ω, IE = 300A, — — 600 ns Inductive Load Switching Operation — — 250 ns — 8.0 — µC IE = 300A, VGE = 0V — 2.6 3.4 Volts IE = 300A, VGE = 0V, Chip — 2.5 — Volts Reverse Recovery Time* trr Reverse Recovery Charge* Qrr Emitter-Collector Voltage* VEC Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Module Lead Resistance Symbol Test Conditions Min. Typ. Max. Units Rlead Main Termnals-Chip (Per Switch) — 1.2 — mΩ Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT — — 0.079 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi — — 0.144 °C/W Contact Thermal Resistance** Rth(c-f) Thermal Grease Applied — 0.015 — °C/W Internal Gate Resistance RGint TC = 25°C 2.1 3.0 3.9 Ω TC = 125°C 4.2 6.0 7.8 Ω External Gate Resistance RG 1.0 — 10 Ω Test Conditions Min. Typ. Max. Units NTC Thermistor Sector, Tj = 25°C unless otherwise specified Characteristics Symbol Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω –7.3 — +7.8 % B(25/50) B(25/50) = In(R25 / R50) / (1/T25 – 1/T50)*** — 3375 — K P25 TC = 25°C — — 10 mW B Constant Power Dissipation *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **TC, Tf measured point is just under the chips. ***R25: Resistance at Absolute Temperature T25(K), R50: Resistance at Absolute Temperature T50(K), T25 = 25(°C) +273.15 = 298.15(K), T50 = 50(°C) + 273.15 = 323.15(K) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 1 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1230015 Dual IGBT NX-Series Module 300 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 600 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 12 300 11 200 100 10 9 0 2 4 6 8 100 0 200 300 400 500 8 IC = 600A 6 IC = 300A 4 IC = 120A 2 0 600 6 8 10 12 14 16 18 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 103 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C Tj = 125°C 102 0 1 2 3 103 VGE = 0V tf Cies Coes 101 100 102 tr 101 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load Cres 100 101 102 100 101 102 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) td(on) 103 td(off) tf tr 102 101 10-1 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load 100 GATE RESISTANCE, RG, (Ω) 101 20 td(off) td(on) 102 10-1 10-1 4 REVERSE RECOVERY, Irr (A), trr (ns) EMITTER CURRENT, IE, (AMPERES) 1 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 SWITCHING TIME, (ns) 2 0 10 103 101 3 SWITCHING TIME, (ns) 0 10 VGE = 15V Tj = 25°C Tj = 125°C 20 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive Load Irr trr 101 100 101 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 500 400 4 Tj = 25°C 15 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) IC = 300A 16 VCC = 400V VCC = 600V 12 8 4 0 0 500 1000 1500 2000 GATE CHARGE, QG, (nC) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/14 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1230015 Dual IGBT NX-Series Module 300 Amperes/1200 Volts VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load Eon Eoff 100 101 102 103 102 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load Eon Eoff 101 100 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 600V VGE = ±15V IE = 300A Tj = 125°C Inductive Load 100 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 101 100 10-1 10-2 Err 101 GATE RESISTANCE, RG, (Ω) 102 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-1 100 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 101 100 101 Err 102 103 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 103 102 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.066°C/W (IGBT) Rth(j-c) = 0.12°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 1 5