QID3320002 DUAL IGBT HVIGBT Module, 200A, 3300V

QID3320002
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBT
HVIGBT Module
200 Amperes/3300 Volts
S NUTS
(3TYP)
A
D
F
C
J (2TYP)
N
7 8
F
H
1
2
M
5 6
B E
3
4
H
V (4TYP)
G (3TYP)
R (DEEP)
K
(3TYP)
T (SCREWING
DEPTH)
L
(2TYP)
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clearance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
U (5TYP)
P
Q
1
4
5
6
2
8
3
7
Outline Drawing and Circuit Diagram
Dimensions
Inches
Dimensions
Inches
Millimeters
140.0
L
0.69±0.01
17.5±0.25
2.87
73.0
M
0.38
9.75
1.89
48.0
N
0.20
5.0
A
5.51
B
C
Millimeters
D
4.88±0.01
124.0±0.25
P
0.22
5.5
E
2.24±0.01
57.0±0.25
Q
1.44
36.5
F
1.18
30.0
R
G
0.43
11.0
S
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
V
0.16
4.0
M6 Metric
M6
T
0.63 Min.
16.0 Min.
U
0.11 x 0.02
2.8 x 0.5
0.28 Dia.
7.0 Dia.
Features:
 -40 to 150°C Extended Temperature Range
 100% Dynamic Tested
 100% Partial Discharge Tested
 Advanced Mitsubishi R-Series
Chip Technology
 Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
 Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
 Copper Baseplate
 Creepage and Clearance Meet
IEC 60077-1
 Rugged SWSOA and RRSOA
Applications:
 High Voltage Power Supplies
 Medium Voltage Drives
 Motor Drives
Traction
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 11
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
SymbolQID3320002 Units
Junction Temperature
Storage Temperature
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (VGE = 0V)
VCES3300 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES±20 Volts
Collector Current (TC = 102°C)
IC
200Amperes
Collector Current (TC = 25°C)
IC
370Amperes
Peak Collector Current (Pulse)
ICM
400*Amperes
Diode Forward Current** (TC = 99°C)
IF
200Amperes
Diode Forward Surge Current** (Pulse)
IFM
400*Amperes
I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C)
I2t
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C)
PC 1780Watts
Mounting Torque, M6 Terminal Screws
—
44
in-lb
Mounting Torque, M6 Mounting Screws
—
44
in-lb
—
900
Grams
Module Weight (Typical)
15kA2sec
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Viso 9.0kVolts
Partial Discharge
Qpd10 pC
(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
tpsc10 µs
(VCC ≤ 2500V, VCE ≤ VCES, VGE = +15V/-8V, RG(on) = 15Ω, RG(off) = 50Ω, Tj = 125°C)
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
2.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
5.5
6.0
6.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
—
2.7***
3.3
Volts
IC = 200A, VGE = 15V, Tj = 125°C
—
3.4
4.0
Volts
IC = 200A, VGE = 15V, Tj = 150°C
—
3.6
—
Volts
Total Gate Charge
QG
VCC = 1800V, IC = 170A, VGE = 15V
—
1.8
—
µC
Emitter-Collector Voltage**
VEC
IE = 200A, VGE = 0V, Tj = 25°C
—
2.3
3.0
Volts
IE = 200A, VGE = 0V, Tj = 125°C
—
2.45
—
Volts
IE = 200A, VGE = 0V, Tj = 150°C
—
2.55
—
Volts
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2
11/14 Rev. 11
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
Units
—23
Typ.
—
nF
—
1.5
—
nF
—0.7
—
nF
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Turn-on Delay Time
td(on)
VCC = 1650V, IC = 200A,
—
800
—
ns
tr
VGE = +15V/-8V,
—
160
—
ns
td(off)
RG(on) = 15Ω, RG(off) = 50Ω,
—
3200
—
ns
tf
LS = 125nH, Inductive Load
—
1300
—
ns
Turn-on Switching Energy
Eon
Tj = 125°C, IC = 200A, VGE = +15V/-8V,
—
335
—
mJ/P
Turn-off Switching Energy
Eoff
RG(on) = 15Ω, RG(off) = 50Ω,
—
275
—
mJ/P
VCC = 1650V, IE = 200A,
—
500
—
ns
Rise Time
Turn-off Delay Time
Fall Time
VGE = 0V, VCE = 10V
VCC = 1650V, LS = 125nH, Inductive Load
Diode Reverse Recovery Time**
trr
Diode Reverse Recovery Charge**
Qrr
VGE = +15V/-8V, RG(on) = 15Ω,
—
180*
—
µC
Diode Reverse Recovery Energy
Erec
LS = 125nH, Inductive Load, Tj = 125°C
—
190
—
mJ/P
Stray Inductance (C1-E2)
LSCE
—60
—
nH
Lead Resistance Terminal-Chip
RCE
—
0.8
—
mΩ
Min.
Typ.
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Max.
Units
Thermal Resistance, Junction to Case***
Rth(j-c) Q
Per IGBT
—0.074
—
°C/W
Thermal Resistance, Junction to Case***
Rth(j-c) D
Per FWDi
—0.11
—
°C/W
Contact Thermal Resistance, Case to Fin
Rth(c-f)
Per Module,
—0.018
—
°C/W
Thermal Grease Applied, λgrease = 1W/mK
Comparative Tracking Index
CTI
600
—
—
Clearance Distance in Air (Terminal to Base)
da(t-b)
35.0—
—
mm
Creepage Distance Along Surface
ds(t-b)
64 —
—
mm
da(t-t)
19 —
—
mm
ds(t-t)
54
—
mm
(Terminal to Base)
Clearance Distance in Air
(Terminal to Terminal)
Creepage Distance Along Surface
—
(Terminal to Terminal)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 11
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
300
Tj = 150°C
VGE = 19V
250
15
11
200
150
100
9
50
0
0
1
2
3
VGE = 15V
Tj = 25°C
Tj = 150°C
13
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
300
4
5
250
200
150
100
50
0
6
0
300
3
4
5
300
VCE = VGE
Tj = 25°C
Tj = 150°C
250
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-CURRENT, IC, (AMPERES)
2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
150
100
50
0
1
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
2
4
6
8
10
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
12
250
200
150
100
50
0
Tj = 25°C
Tj = 150°C
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4
11/14 Rev. 11
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
CAPACITANCE VS. VCE
(TYPICAL)
GATE CHARGE VS. VGE
100
10
Coes
1.0
VGE = 0V
Tj = 25°C
f = 100 kHz
1000
100
800
700
600
500
101
0
-5
-10
0.5
0
1.0
1.5
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
300
Eon
Eoff
Erec
200
100
0
5
GATE CHARGE, QG, (μC)
400
0
10
-15
102
VCE = 1800V
IC = 170A
Tj = 25°C
15
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
VCC = 1800V
VGE = +15V/-8V
RG(on) = 15Ω
RG(off) = 50Ω
Ls = 100nH
Tj = 125°C
Inductive Load
900
Cres
50
100 150 200 250 300 350
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING ENERGIES, Eon, Eoff, Erec, (mJ/PULSE)
CAPACITANCE, Cies, Coes, Cres, (nF)
Cies
0.1
10-1
SWITCHING ENERGIES, Eon, Eoff, Erec, (mJ/PULSE)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
1100
1000
VCC = 1800V
VGE = +15V/-8V
RG(on) = 15Ω
RG(off) = 50Ω
Ls = 100nH
Tj = 150°C
Inductive Load
900
800
700
600
500
2.0
Eon
Eoff
400
Erec
300
200
100
0
0
50
100 150 200 250 300 350
COLLECTOR CURRENT, IC, (AMPERES)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 11
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
FREE-WHEEL DIODE
REVERSE RECOVERY SAFE
OPERATING AREA (TYPICAL)
REVERSE BIAS SAFE
OPERATING AREA (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
500
400
300
200
VCC ≤ 2500V
VGE = +15V/-8V
RG(off) = 50Ω
Tj = 150°C
100
0
0
1000
2000
3000
4000
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS)
500
400
300
200
VCC ≤ 2500V
di/dt = 1kA/µs
Tj = 150°C
100
0
0
1000
2000
3000
4000
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1.2
1.0
0.8
0.6
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.074°C/W
(IGBT)
Rth(j-c) =
0.11°C/W
(FWDi)
0.4
0.2
0
10-3
10-2
10-1
100
101
TIME, (s)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6
11/14 Rev. 11
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Turn-on, Turn-off and Reverse Recovery Test Circuit
LS1
DIODE A
4
1
5
DIODE V
6
2
+
RG(on)
15Ω
RG(off)
LOAD
DRIVER
50Ω
–
LLOAD
(380µH)
+
8
IGBT V
V
7
LS2
C = 2mF
VCC
C = 2mF
VCC
CS = 27µF
–
3
IGBT A
Short Circuit Test Circuit
LS1
4
1
5
SHORT
6
2
RG(on)
15Ω
RG(off)
LOAD
DRIVER
50Ω
LS2
+
8
IGBT V
V
7
CS = 27µF
–
3
IGBT A
Notes:
1.
2.
3.
Total stray inductance LS = 125nH.
Short circuit test is done with a copper bar between upper
IGBT collector and emitter.
Test temperature is controlled with a heating plate set for +125°C.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 11
7