QID3320002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module 200 Amperes/3300 Volts S NUTS (3TYP) A D F C J (2TYP) N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH) L (2TYP) Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. U (5TYP) P Q 1 4 5 6 2 8 3 7 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches Millimeters 140.0 L 0.69±0.01 17.5±0.25 2.87 73.0 M 0.38 9.75 1.89 48.0 N 0.20 5.0 A 5.51 B C Millimeters D 4.88±0.01 124.0±0.25 P 0.22 5.5 E 2.24±0.01 57.0±0.25 Q 1.44 36.5 F 1.18 30.0 R G 0.43 11.0 S H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 V 0.16 4.0 M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 0.28 Dia. 7.0 Dia. Features: -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 60077-1 Rugged SWSOA and RRSOA Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 11 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3320002 Dual IGBT HVIGBT Module 200 Amperes/3300 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQID3320002 Units Junction Temperature Storage Temperature Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (VGE = 0V) VCES3300 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (TC = 102°C) IC 200Amperes Collector Current (TC = 25°C) IC 370Amperes Peak Collector Current (Pulse) ICM 400*Amperes Diode Forward Current** (TC = 99°C) IF 200Amperes Diode Forward Surge Current** (Pulse) IFM 400*Amperes I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C) I2t Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) PC 1780Watts Mounting Torque, M6 Terminal Screws — 44 in-lb Mounting Torque, M6 Mounting Screws — 44 in-lb — 900 Grams Module Weight (Typical) 15kA2sec Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 9.0kVolts Partial Discharge Qpd10 pC (V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, tpsc10 µs (VCC ≤ 2500V, VCE ≤ VCES, VGE = +15V/-8V, RG(on) = 15Ω, RG(off) = 50Ω, Tj = 125°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 2.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 5.5 6.0 6.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 2.7*** 3.3 Volts IC = 200A, VGE = 15V, Tj = 125°C — 3.4 4.0 Volts IC = 200A, VGE = 15V, Tj = 150°C — 3.6 — Volts Total Gate Charge QG VCC = 1800V, IC = 170A, VGE = 15V — 1.8 — µC Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V, Tj = 25°C — 2.3 3.0 Volts IE = 200A, VGE = 0V, Tj = 125°C — 2.45 — Volts IE = 200A, VGE = 0V, Tj = 150°C — 2.55 — Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/14 Rev. 11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3320002 Dual IGBT HVIGBT Module 200 Amperes/3300 Volts Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units —23 Typ. — nF — 1.5 — nF —0.7 — nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-on Delay Time td(on) VCC = 1650V, IC = 200A, — 800 — ns tr VGE = +15V/-8V, — 160 — ns td(off) RG(on) = 15Ω, RG(off) = 50Ω, — 3200 — ns tf LS = 125nH, Inductive Load — 1300 — ns Turn-on Switching Energy Eon Tj = 125°C, IC = 200A, VGE = +15V/-8V, — 335 — mJ/P Turn-off Switching Energy Eoff RG(on) = 15Ω, RG(off) = 50Ω, — 275 — mJ/P VCC = 1650V, IE = 200A, — 500 — ns Rise Time Turn-off Delay Time Fall Time VGE = 0V, VCE = 10V VCC = 1650V, LS = 125nH, Inductive Load Diode Reverse Recovery Time** trr Diode Reverse Recovery Charge** Qrr VGE = +15V/-8V, RG(on) = 15Ω, — 180* — µC Diode Reverse Recovery Energy Erec LS = 125nH, Inductive Load, Tj = 125°C — 190 — mJ/P Stray Inductance (C1-E2) LSCE —60 — nH Lead Resistance Terminal-Chip RCE — 0.8 — mΩ Min. Typ. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Max. Units Thermal Resistance, Junction to Case*** Rth(j-c) Q Per IGBT —0.074 — °C/W Thermal Resistance, Junction to Case*** Rth(j-c) D Per FWDi —0.11 — °C/W Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, —0.018 — °C/W Thermal Grease Applied, λgrease = 1W/mK Comparative Tracking Index CTI 600 — — Clearance Distance in Air (Terminal to Base) da(t-b) 35.0— — mm Creepage Distance Along Surface ds(t-b) 64 — — mm da(t-t) 19 — — mm ds(t-t) 54 — mm (Terminal to Base) Clearance Distance in Air (Terminal to Terminal) Creepage Distance Along Surface — (Terminal to Terminal) *Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC measurement point is just under the chips. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 11 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3320002 Dual IGBT HVIGBT Module 200 Amperes/3300 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 300 Tj = 150°C VGE = 19V 250 15 11 200 150 100 9 50 0 0 1 2 3 VGE = 15V Tj = 25°C Tj = 150°C 13 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 4 5 250 200 150 100 50 0 6 0 300 3 4 5 300 VCE = VGE Tj = 25°C Tj = 150°C 250 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-CURRENT, IC, (AMPERES) 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 200 150 100 50 0 1 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 2 4 6 8 10 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 12 250 200 150 100 50 0 Tj = 25°C Tj = 150°C 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/14 Rev. 11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3320002 Dual IGBT HVIGBT Module 200 Amperes/3300 Volts CAPACITANCE VS. VCE (TYPICAL) GATE CHARGE VS. VGE 100 10 Coes 1.0 VGE = 0V Tj = 25°C f = 100 kHz 1000 100 800 700 600 500 101 0 -5 -10 0.5 0 1.0 1.5 SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 300 Eon Eoff Erec 200 100 0 5 GATE CHARGE, QG, (μC) 400 0 10 -15 102 VCE = 1800V IC = 170A Tj = 25°C 15 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VCC = 1800V VGE = +15V/-8V RG(on) = 15Ω RG(off) = 50Ω Ls = 100nH Tj = 125°C Inductive Load 900 Cres 50 100 150 200 250 300 350 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING ENERGIES, Eon, Eoff, Erec, (mJ/PULSE) CAPACITANCE, Cies, Coes, Cres, (nF) Cies 0.1 10-1 SWITCHING ENERGIES, Eon, Eoff, Erec, (mJ/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 1100 1000 VCC = 1800V VGE = +15V/-8V RG(on) = 15Ω RG(off) = 50Ω Ls = 100nH Tj = 150°C Inductive Load 900 800 700 600 500 2.0 Eon Eoff 400 Erec 300 200 100 0 0 50 100 150 200 250 300 350 COLLECTOR CURRENT, IC, (AMPERES) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 11 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3320002 Dual IGBT HVIGBT Module 200 Amperes/3300 Volts FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) REVERSE BIAS SAFE OPERATING AREA (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 500 400 300 200 VCC ≤ 2500V VGE = +15V/-8V RG(off) = 50Ω Tj = 150°C 100 0 0 1000 2000 3000 4000 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS) 500 400 300 200 VCC ≤ 2500V di/dt = 1kA/µs Tj = 150°C 100 0 0 1000 2000 3000 4000 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 0.8 0.6 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.074°C/W (IGBT) Rth(j-c) = 0.11°C/W (FWDi) 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 11/14 Rev. 11 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3320002 Dual IGBT HVIGBT Module 200 Amperes/3300 Volts Turn-on, Turn-off and Reverse Recovery Test Circuit LS1 DIODE A 4 1 5 DIODE V 6 2 + RG(on) 15Ω RG(off) LOAD DRIVER 50Ω – LLOAD (380µH) + 8 IGBT V V 7 LS2 C = 2mF VCC C = 2mF VCC CS = 27µF – 3 IGBT A Short Circuit Test Circuit LS1 4 1 5 SHORT 6 2 RG(on) 15Ω RG(off) LOAD DRIVER 50Ω LS2 + 8 IGBT V V 7 CS = 27µF – 3 IGBT A Notes: 1. 2. 3. Total stray inductance LS = 125nH. Short circuit test is done with a copper bar between upper IGBT collector and emitter. Test temperature is controlled with a heating plate set for +125°C. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 11 7