QID4520002 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module 200 Amperes/4500 Volts S NUTS (3TYP) A D F C J (2TYP) N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH) L (2TYP) Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. U (5TYP) P Q 1 4 5 6 2 8 3 7 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches Millimeters 140.0 L 0.69±0.01 17.5±0.25 2.87 73.0 M 0.38 9.75 1.89 48.0 N 0.20 5.0 A 5.51 B C Millimeters D 4.88±0.01 124.0±0.25 P 0.22 5.5 E 2.24±0.01 57.0±0.25 Q 1.44 36.5 F 1.18 30.0 R G 0.43 11.0 S H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 V 0.16 4.0 M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 0.28 Dia. 7.0 Dia. Features: -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 60077-1 Rugged SWSOA and RRSOA Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 3 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4520002 Dual IGBT HVIGBT Module 200 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQID4520002 Units Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +125°C) Tj -40 to 150 °C Tstg -40 to 125 °C VCES4500 Volts Collector-Emitter Voltage (VGE = 0V, Tj = -50°C) VCES4400 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current, DC (TC = 82°C) Peak Collector Current (Pulse) Diode Forward Current** IC 200Amperes ICM 400*Amperes IF 200Amperes Diode Forward Surge Current** (Pulse) IFM 400*Amperes I2t for Diode (t = 10ms) I2t Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) PC 2250Watts Mounting Torque, M6 Terminal Screws — 44 in-lb Mounting Torque, M6 Mounting Screws — 44 in-lb — 900 Grams Module Weight (Typical) 15kA2sec Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 9.0kVolts Partial Discharge Qpd10 pC (V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, tpsc10 µs (VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V, Tj = 125°C — VCE = VCES, VGE = 0V, Tj = 150°C — — 2.7 mA — 15.0 mA IGES VGE = VGES, VCE = 0V –0.5 — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5.8 6.3 6.8 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 3.5 — Volts IC = 200A, VGE = 15V, Tj = 125°C — 4.4 5.1 Volts Total Gate Charge QG VCC = 2800V, IC = 200A, VGE = 15V — 2.25 — µC Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V, Tj = 25°C — 2.5 — Volts IE = 200A, VGE = 0V, Tj = 125°C — 2.8 3.4 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/14 Rev. 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4520002 Dual IGBT HVIGBT Module 200 Amperes/4500 Volts Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units —29 Typ. — nF — 1.83 — nF —0.83 — nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-on Delay Time td(on) VCC = 2800V, IC = 200A, — 1.00 — µs tr VGE = ±15V, RG(on) = 16.2Ω, — 0.30 — µs td(off) RG(off) = 60Ω, LS = 150nH, — tf Inductive Load Turn-on Switching Energy Eon Tj = 125°C, IC = 200A, VGE = ±15V, Turn-off Switching Energy Eoff RG(on) = 16.2Ω, RG(off) = 60Ω, Rise Time Turn-off Delay Time Fall Time VGE = 0V, VCE = 10V, f = 100kHz 3.6 — µs —0.36 — µs —917 — mJ/P — 716 — mJ/P µs VCC = 2800V, LS = 150nH, Inductive Load Diode Reverse Recovery Time** trr VCC = 2800V, IE = 200A, — 0.7 — Diode Reverse Recovery Charge** Qrr VGE = ±15V, RG(on) = 16.2Ω, — 167* — µC Diode Reverse Recovery Energy Erec LS = 150nH, Inductive Load — 258 — mJ/P Stray Inductance (C1-E2) LSCE —60 — nH Lead Resistance Terminal-Chip RCE — 0.8 — mΩ Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case*** Rth(j-c) Q Per IGBT —55 — °K/kW Thermal Resistance, Junction to Case*** Rth(j-c) D Per FWDi —104 — °K/kW Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, —18 — °K/kW Thermal Grease Applied, λgrease = 1W/mK Comparative Tracking Index — — Clearance Distance in Air (Terminal to Base) da(t-b) CTI 35.0— 600 — mm Creepage Distance Along Surface ds(t-b) 64 — — mm da(t-t) 19 — — mm ds(t-t) 54 — mm (Terminal to Base) Clearance Distance in Air (Terminal to Terminal) Creepage Distance Along Surface — (Terminal to Terminal) *Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC measurement point is just under the chips. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 3 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4520002 Dual IGBT HVIGBT Module 200 Amperes/4500 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 412.5 Tj = 25°C 330.0 15 13 VGE = 16V COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 412.5 11 250.0 10 165.0 82.5 0 0 2 4 6 330.0 250.0 165.0 82.5 0 8 VGE = 15V Tj = 25°C Tj = 125°C 0 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-CURRENT, IC, (AMPERES) 250.0 165.0 82.5 0 0 4 6 8 412.5 VCE = VGE Tj = 25°C Tj = 150°C 330.0 4 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 412.5 2 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 8 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 16 330.0 250.0 165.0 82.5 0 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/14 Rev. 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4520002 Dual IGBT HVIGBT Module 200 Amperes/4500 Volts CAPACITANCE VS. VCE (TYPICAL) GATE CHARGE VS. VGE Cies 16.6 Coes 1.66 Cres VGE = 0V Tj = 25°C f = 100 kHz 0.165 10-1 SWITCHING ENERGIES, Eon, Eoff, Erec, (J/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 2.66 100 101 2.00 1.66 1.33 1.00 0 -5 -10 0 0.825 1.65 2.48 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 0.33 0 5 GATE CHARGE, QG, (μC) 0.66 0 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VCC = 2800V VGE = ±15V RG(on) = 16.2Ω RG(off) = 60Ω Ls = 150nH Tj = 125°C Inductive Load Eon Eoff Erec 2.33 VCE = 2800V IC = 200A Tj = 25°C 15 -15 102 82.5 165.0 247.5 330.0 412.5 COLLECTOR CURRENT, IC, (AMPERES) 3.30 500 COLLECTOR CURRENT, IC, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 166.0 416 333 250 166 VCC ≤ 3200V VGE = ±15V RG(off) = 60Ω Tj = 125°C 83 0 0 1000 2000 3000 4000 5000 COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 3 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com REVERSE RECOVERY CURRENT, Irr, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 500 VCC ≤ 3200V di/dt < 1000A/µs Tj = 125°C 416 333 250 166 83 0 0 1000 2000 3000 4000 5000 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) QID4520002 Dual IGBT HVIGBT Module 200 Amperes/4500 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 0.8 0.6 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 55 °K/kW (IGBT) Rth(j-c) = 104 °K/kW (FWDi) 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 11/14 Rev. 3