QIS1260015 Single IGBT NX-Series Module 600A 1200V

QIS1260015 Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Single IGBTMOD™
NX-Series Module
600 Amperes/1200 Volts
A
D
E
J
F
J
G
Y
(4 PLACES)
AD
AE
AF
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Q
ST
47
U
24
Z
R
S T
Q
48
U
AA B
AB
23
DETAIL "B"
1
W
V
X
M
L
2
K
3
4
5
6
7
8
AG
9 10 11 12 13 14 15 16 17 18 19 20 21 22
N
P
K
L
DETAIL "A"
AL
AM
AK
AT
AU
E(24) E(23)
AV
C
AR
AS
AP
C(22)
AW
AN
E1(16)
AX
G1(15)
C(47) C(48)
AQ
DETAIL "A"
Th
NTC
DETAIL "B"
AJ
AH
AC (4 PLACES)
TH1
(1)
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
TH2
(2)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
Millimeters
5.98
152.0
2.44
62.0
0.67
17.0
5.39
137.0
4.79
121.7
4.33±0.02 110.0±0.5
3.89
99.0
3.72
94.5
0.53
13.5
0.15
3.8
0.28
7.25
0.30
7.75
1.95
49.54
0.9
22.86
0.55
14.0
0.87
22.0
0.67
17.0
0.48
12.0
0.24
6.0
0.16
4.2
0.37
6.5
0.83
21.14
M6
M6
Dimensions
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53
39.0
1.97±0.02 50.0±0.5
2.26
57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.0217.0+1.0/-0.5
0.51
13.0
0.27
7.0
0.03
0.8
0.81
20.5
0.12
3.0
0.14
3.5
0.21
5.4
0.49
12.5
0.15
3.81
0.05
1.15
0.025
0.65
0.29
7.4
0.24
6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06
1.5
0.49
12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transistor
in a single configuration with a
reverse connected rectifier grade
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Rectifier Grade
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
QIS1260015 is a 1200V (VCES),
600 Ampere Single IGBTMOD™
Power Module.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 2
1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
SymbolQIS1260015Units
Power Device Junction Temperature
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M6 Main Terminal Screws
—
40
in-lb
Module Weight (Typical)
—
330
Grams
Baseplate Flatness, On Centerline X, Y (See Below)
—
±0 ~ +100
µm
Storage Temperature
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
VISO 2500Volts
Inverter Sector
Collector-Emitter Voltage (VGE = 0V)
VCES 1200Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20Volts
Collector Current (DC, TC = 90°C)*1,*5,*9IC
Peak Collector Current
(Pulse)*4I
600Amperes
CM
1200Amperes
Maximum Collector Dissipation (TC = 25°C)*1,*5PC
Emitter Currentt (TC = 25°C)*1,*5,*9 3785Watts
IE*3
600Amperes
Peak Emitter Current (Pulse)*4IEM*3
1200Amperes
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*9 Use both of each main terminal (collector and emitter) to connect external wiring.
BASEPLATE FLATNESS
MEASUREMENT POINT
CHIP LOCATION (TOP VIEW)
IGBT
FWDi
NTC Thermistor
0
+ : CONVEX
HEATSINK SIDE
– : CONCAVE
Chip Location (Top View)
Y
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
X
– : CONCAVE
47
24
48
23
38.1
50.6
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
98.1
5
66.7
4
84.9
3
71.6
2
46.1
0
1
26.7
+ : CONVEX
HEATSINK SIDE
Dimensions in mm (Tolerance: ±1mm)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2
11/14 Rev. 2
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
VGE(th)
IC = 60mA, VCE = 10V
6
7
8
Volts
IGES
VGE = VGES, VCE = 0V
—
—
0.5
μA
VCE(sat)
IC = 600A, VGE = 15V, Tj = 25°C*6
—
2.0
2.6
Volts
IC = 600A, VGE = 15V, Tj = 125°C*6
—
2.2
—
Volts
IC = 600A, VGE = 15V, Tj = 150°C*6
—
1.9
—
Volts
—
—
100
nF
—
—
9.0
nF
—
—
2.0
nF
—
3000
—
nC
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCC = 600V, IC = 600A, VGE = 15V
VCE = 10V, VGE = 0V
Inductive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 600A,
—
—
660
ns
Load
Turn-on Rise Time
tr
VGE = ±15V,
—
—
190
ns
Switch
Turn-off Delay Time
td(off)
RG = 2.2Ω, IE = 600A,
—
—
700
ns
Time
Turn-off Fall Time
tf
Inductive Loas Switching Operation
—
—
600
ns
*3
Emitter-Collector Voltage
VEC
25°C*6
—
1.0
1.2
Volts
IE = 600A, VGE = 0V, Tj = 125°C*6
—
0.9
1.1
Volts
IE = 600A, VGE = 0V, Tj =
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Module Lead Resistance
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rlead
Main Termnals-Chip (Per Switch)
—
0.6
—
mΩ
Case*1
Rth(j-c)Q
Per IGBT
—
—
0.033
°C/W
Thermal Resistance, Junction to Case*1
Rth(j-c)D
Per FWDi
—
—
0.028
°C/W
Rth(c-f)
Thermal Grease Applied
—
0.015
—
°C/W
Thermal Resistance, Junction to
Contact Thermal
Resistance*1
(Per 1 Module)*2
(Case to Heatsink)
Internal Gate Resistance
External Gate Resistance
RGint
TC = 25°C
0.7
1.0
1.3
Ω
TC = 125°C
1.4
2.0
2.6
Ω
1.0
—
10
Ω
RG
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
Test Conditions
Min.
Typ.
Max.
Units
R
TC = 25°C
4.85
5.00
5.15
kΩ
∆R/R
TC = 100°C, R100 = 493Ω
–7.3
—
+7.8
%
B(25/50)
Approximate by Equation*9
—
3375
—
K
P25
TC = 25°C
—
—
10
mW
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
R25
1
1
*9 B(25/50) = In(
)/(
–
) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],
R50 T25 T50
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 2
3
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
VGE =
20V
800
12
600
11
400
200
10
9
0
4
6
8
200
400
600
IC = 600A
4
2
0
800 1000 1200
IC = 240A
6
8
10
12
14
16
18
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
104
101
Cres
100
10-1
10-1
100
101
104
tf
103
td(off)
td(on)
tr
102
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
101
101
102
SWITCHING TIME, (ns)
Coes
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0
IC = 1200A
6
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
Cies
102
103
td(off)
td(on)
tr
tf
102
100
103
101
102
COLLECTOR CURRENT, IC, (AMPERES)
GATE RESISTANCE, RG, (Ω)
GATE CHARGE VS. VGE
(INVERTER PART)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
16
VCC = 600V
12
8
4
1000
103
102
VCC = 400V
2000
3000
4000
GATE CHARGE, QG, (nC)
5000
101
100
101
20
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
IC = 600A
0
1
8
COLLECTOR-CURRENT, IC, (AMPERES)
102
0
2
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
VGE = 0V
20
3
0
10
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
CAPACITANCE, Cies, Coes, Cres, (nF)
103
2
SWITCHING TIME, (ns)
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
102
COLLECTOR CURRENT, IC, (AMPERES)
103
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
1000
4
Tj = 25°C
13
15
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
1200
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
Eon
Eoff
101
100
100
101
102
GATE RESISTANCE, RG, (Ω)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4
11/14 Rev. 2
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
100
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10-2
10-1
100
10-1
10-1
10-2
101
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.033°C/W
(IGBT)
10-3
10-2
10-5
10-4
10-3
10-3
TIME, (s)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 2
5