QID1210005 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft switching applications. Each module consists of two IGBT Transistors with each transistor having a reverseconnected super-fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 10 11 12 E1 C1 X B M N E G DETAIL "B" G2 S2 G1 S1 20 19 18 17 L 16 15 14 13 T S R W DETAIL "A" V H K C T DETAIL "A" C1 (10 - 12) C2 (4 - 6) G1 (15 - 16) G2 (19 - 20) E1 (13 - 14) E2 (17 - 18) E1 (7 - 9) E2 (1 - 3) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.32 109.8 Q 0.449 11.40 B 2.21 56.1 R 0.885 22.49 C 0.71 18.0 S 1.047 26.6 D 3.70±0.02 94.0±0.5 T 0.15 3.80 E 2.026 51.46 U 0.16 4.0 F 3.17 80.5 V 0.30 7.5 G 1.96 49.8 W 0.045 1.15 H 1.00 25.5 X 0.03 0.8 K 0.87 22.0 Y 0.16 4.0 L 0.266 6.75 Z 0.47 12.1 M 0.26 6.5 AA N 0.59 15.0 P 0.586 14.89 0.17 Dia. 4.3 Dia. AB 0.10 Dia. 2.5 Dia. AC 0.08 Dia. 2.1 Dia. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 4 Features: £ Low ESW(off) £ Aluminum Nitride Isolation £ Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode £ Low Internal Inductance £ 2 Individual Switches per Module £ Isolated Baseplate for Easy Heat Sinking £ Copper Baseplate £ RoHS Compliant Applications: £ Energy Saving Power Systems such as: Fans; Pumps; Consumer Appliances £ High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics £ High Temperature Power Systems such as: Power Electronics in Electric Vehicle and Aviation Systems 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings SymbolQID1210005 Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 150 °C Collector-Emitter Voltage (G-E Short) VCES1200 Volts Gate-Emitter Voltage (C-E Short) VGES±20 Volts Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) IC 100*Amperes ICM 200*Amperes IE 80*Amperes Repetitive Peak Emitter Current (TC = 25°C, tp = 10ms, Half Sine Pulse)** IEM 455*Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 730Watts Mounting Torque, M6 Mounting — Weight 40 in-lb — 270Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO2500 Volts IGBT Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 100A, VGE = 15V, Tj = 125°C — 5.0 — Volts QG VCC = 600V, IC = 100A, VGE = 15V — 450 — nC Total Gate Charge Input Capacitance Cies Output Capacitance Coes — — 16 nf VCE = 10V, VGE = 0V — — 1.3 nf — — 0.3 nf — — TBD ns Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 100A, Load Rise Time Switch Turn-off Delay Time TimeFall Time tr VGE1 = VGE2 = 15V, — — TBD ns td(off) RG = 3.1Ω, — — TBD ns tf Inductive Load Switching Operation — — TBD ns * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi). Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/14 Rev. 4 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Diode Forward Voltage VFM Diode Reverse Current IR Diode Capacitive Charge QC Test Conditions Min. Typ. Max. Units IF = 80A, VGS = -5V — 1.6 2.0 Volts IF = 80A, VGS = -5V, Tj = 175°C — 2.5 3.2 Volts VR = 1200V — 140 800 μA VR = 1200, Tj = 150°C — 260 1600 μA VR = 1200V, IF = 80A, di/dt = 800A/μs — 520 — nC Test Conditions Min. Typ. Max. Units Per IGBT 1/2 Module, — — 0.17 °C/W — — 0.304 °C/W Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c)Q TC Reference Point Under Chips Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference TC Reference Point Under Chips Contact Thermal Resistance Rth(c-f) External Gate Resistance RG Internal Inductance Lint Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W 31 Ω 10— nH 3.1— IGBT Part — Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 4 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 13 150 12 100 11 10 50 9 0 8 0 2 4 6 8 VGE = 10V Tj = 25°C Tj = 125°C 150 100 50 0 10 5 0 15 10 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 9 10 VGE = 15V Tj = 25°C Tj = 125°C 8 7 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 200 14 VGE = 20V Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) 200 TRANSFER CHARACTERISTICS (TYPICAL) 6 5 4 3 2 1 0 0 50 100 150 COLLECTOR-CURRENT, IC, (AMPERES) 200 Tj = 25°C IC = 200A 8 6 IC = 100A 4 IC = 40A 2 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/14 Rev. 4 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS (TYPICAL) FREE-WHEEL SCHOTTKY DIODE REVERSE CHARACTERISTICS (TYPICAL) 160 1600 128 REVERSE CURRENT, IR, (μA) FORWARD CURRENT, IF, (μA) Tj = 25°C Tj = 75°C Tj = 125°C 96 Tj = 175°C 64 32 1280 Tj = 175°C 960 Tj = 125°C 640 Tj = 75°C 320 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 102 0 1 2 3 4 0 5 0 500 1000 REVERSE VOLTAGE, VR, (VOLTS) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 2000 103 VGE = 0V Cies 101 Coes 100 102 TBD 101 VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load Cres 10-1 10-1 1500 FORWARD VOLTAGE, VF, (VOLTS) SWITCHING TIME, (ns) 0 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 4 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 16 VCC = 400V VCC = 600V 12 8 4 0 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) IC = 100A 102 101 100 200 300 400 500 600 700 0 TBD VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 10-1 101 102 103 GATE CHARGE, QG, (nC) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) 102 VCC = 600V VGE = ±15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) GATE CHARGE VS. VGE TBD 101 GATE RESISTANCE, RG, (Ω) 102 TBD 101 100 101 VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus 102 103 EMITTER CURRENT, IE, (AMPERES) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 11/14 Rev. 4 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 VCC = 600V VGE = ±15V IE = 100A Tj = 125°C Inductive Load C Snubber at Bus 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) QID1210005 Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts 100 10-1 TBD 10-2 100 100 101 GATE RESISTANCE, RG, (Ω) 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.17°C/W (IGBT) Rth(j-c) = 0.304°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 4 7