CM600DU-12NFH
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
NFH-Series Module
600 Amperes/600 Volts
A
M
M
D
V
E2 G2
L
H
J
C2E1
E2
C1
G1 E1
E
U
W
B
H
R
N
Y
X
L
Q
Q
AC
P
AD
S - NUTS (3 TYP)
T - (4 TYP)
Z
K
G
G
Z
K
V
AA
Z
K
AB M
C
F
LABEL
G2
E2
C2E1
Di1
Tr2
E2
Tr1
C1
Di2
E1
G1
Tolerance Otherwise Specified (mm)
Division of Dimension
Tolerance
0.5 to
3
±0.2
over
3 to
6
±0.3
over
6 to
30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
Outline Drawing and Circuit Diagram
DimensionsInches Millimeters
A
4.33
110.0
B
3.15
80.0
C
1.14+0.04/-0.0129.0+1.0/-0.5
D
3.66±0.01 93.0±0.25
E
2.44±0.01 62.0±0.25
F
0.83
21.2
G
0.28
7.0
H
0.24
6.0
J
0.59
15.0
K
0.55
14.0
L
0.35
9.0
M
0.33
8.5
N
0.69
17.5
P
0.85
21.5
DimensionsInches Millimeters
Q
0.98
25.0
R
1.23
31.4
S
M6 Metric
M6
T
0.26 Dia.
6.5 Dia.
U
0.4
10.0
V
0.16
4.0
W
0.87
22.2
X
0.72
18.25
Y
0.36
9.25
Z
0.71
18.0
AA
0.11
2.8
AB
0.29
7.5
AC
0.21
5.3
AD
0.47
12.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low VCE(sat)
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM600DU-12NFH is a 600V
(VCES), 600 Ampere Dual
IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM600
02/13 Rev. 3
12
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Item
SymbolRatingUnits
Collector-Emitter Voltage (G-E Short-circuited)
VCES 600Volts
Gate-Emitter Voltage (C-E Short-circuited)
VGES ±20Volts
Collector Current (Operation)*5IC
600Amperes
Collector Current (Operation)*5IC(rms) 400Amperes
Collector Current (Pulse, Repetitive)*4ICRM
1200Amperes
Total Power Dissipation (TC = 25°C)*2,*5Ptot 1130Watts
Total Power Dissipation (TC' = 25°C)*3,*5Ptot' 2350Watts
Emitter Current (Free Wheeling Diode Forward Current, Operation)*5IE*1
Emitter Current (Free Wheeling Diode Forward Current,
Operation)*5I
600Amperes
*1
E(rms)
400Amperes
Emitter Current (Free Wheeling Diode Forward Current, Operation, Pulse, Repetitive)*4IERM*1 1200Amperes
°C
–40 to 125
°C
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.)
VISO 2500Volts
77.2
0
Tr2
Tr2
44.4
Di2
Di2
Tr1
Di1
Tr1
27.3
42.1
C1
64.8
E2
44.2
29.4
C2E1
Di1
G1 E1
32.0
E2 G2
0
0
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
*3 Case temperature (TC') and heatsink temperature (Ts') is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance {Rth(s-a)} should be measured just under the chips.
*4 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*5 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
44.2
–40 to 150
Tstg
29.4
Tj
Storage Temperature
0
Junction Temperature
LABEL SIDE
Each mark points to the center position of each chip.
Tr1 / Tr2 : IGBT
2
Di1 / Di2 : FWDi
02/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate-Emitter Leakage Current
IGES
±VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
5.0
6.0
7.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 15V, Tj = 25°C*6
—
2.0
2.7
Volts
IC = 600A, VGE = 15V, Tj = 125°C*6
—
1.95
—
Volts
Collector-Emitter Cutoff Current
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
QG
Turn-on Delay Time
Rise Time
Turn-off Delay Time
—
—
166
nF
VCE = 10V, VGE = 0V
—
—
11
nF
—
—
6.0
nF
VCC = 300V, IC = 600A, VGE = 15V
—
3720
—
nC
—
—
650
ns
—
—
250
ns
td(on)
tr
VCC = 300V, IC = 600A,
td(off)
VGE = ±15V, RG = 2.0Ω,
—
—
800
ns
tf
Inductive Load Switching Operation
—
—
150
ns
Emitter-Collector Voltage
VEC*1
IE = 600A, VGE = 0V*6
—
2.0
2.6
Volts
Reverse Recovery Time
trr*1
VCC = 300V, IE = 600A, VGE = ±15V
—
—
200
ns
Fall Time
*1
Reverse Recovery Charge
Qrr
Turn-on Switching Energy per Pulse
Eon
RG = 2.0Ω, Inductive Load
—
11
—
µC
VCC = 300V, IC = IE = 600A,
—
11
—
mJ
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 2.0Ω,
—
27
—
mJ
Reverse Recovery Energy per Pulse
Err*1
Tj = 125°C, Inductive Load
—
6.3
—
mJ
rg
Per Switch
—
0.8
—
Ω
Internal Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
02/13 Rev. 3
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*2
Rth(j-c)Q
Case*2
Thermal Resistance, Junction to
Contact Thermal Resistance,
Case to
Per IGBT
—
Rth(j-c)D
Per FWDi
Rth(c-f)
Thermal Grease Applied
Heatsink*2
(Per 1
—
0.11
K/W
—
—
0.12
K/W
—
0.02
—
K/W
Module)*7
Thermal Resistance, Junction to Case*3
Rth(j-c')Q
Per IGBT
—
—
0.053
K/W
Thermal Resistance, Junction to Case*3
Rth(j-c')D
Per FWDi
—
—
0.078
K/W
35
40
in-lb
Mechanical Characteristics
Mounting Torque
Mt
Main Terminals, M6 Screw
31
Ms
Mounting to Heatsink, M6 Screw
31
35
40
in-lb
—
580
—
Grams
-100
—
+100
µm
Weight
m
Flatness of Baseplate
ec
On Centerline X, Y*8
Recommended Operating Conditons, Ta = 25°C
Applied Across C1-E2
—
300
400
Volts
Applied Across G1-Es1 / G2-Es2
13.5
15.0
16.5
Volts
RG
Per Switch
1.0
—
10
Ω
77.2
0
44.4
Di2
Di1
Tr1
Di1
Tr1
Tr2
Di2
C2E1
27.3
42.1
G1 E1
Tr2
32.0
E2 G2
0
E2
C1
64.8
44.2
3 mm
29.4
Y
X
0
– CONCAVE
+ CONVEX
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Case temperature (TC') and heatsink temperature (Ts') is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance {Rth(s-a)} should be measured just under the chips.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
44.2
External Gate Resistance
VCC
VGE(on)
29.4
Gate (-Emitter Drive) Voltage
0
(DC) Supply Voltage
LABEL SIDE
Each mark points to the center position of each chip.
BOTTOM
Tr1 / Tr2 : IGBT
Di1 / Di2 : FWDi
– CONCAVE
BOTTOM
LABEL SIDE
BOTTOM
4
+ CONVEX
02/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
1000
3.0
13
15
VGE = 20V
11
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
9.5
9
8.5
800
8
600
7.5
400
200
7
Tj = 25°C
0
0
1
2
3
4
2.0
1.5
1.0
0.5
200
0
400
600
4
3
IC = 1200A
IC = 600A
2
IC = 240A
1
0
800 1000 1200
Tj = 25°C
0
2
4
6
8 10 12 14 16 18 20
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
103
Tj = 25°C
Tj = 125°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
2.5
0
5
5
VGE = 15V
Tj = 25°C
Tj = 125°C
103
102
103
VGE = 0V
td(off)
td(on)
Cies
SWITCHING TIME, (ns)
COLLECTOR CURRENT, IC, (AMPERES)
1200
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
102
101
102
tf
tr
VCC = 300V
VGE = ±15V
RG = 2.0Ω
Tj = 125°C
Inductive Load
Coes
Cres
0.5
1.0
1.5
2.0
2.5
3.0
100
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
VCC = 300V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
td(off)
103
td(on)
tr
tf
102
10-1
100
101
GATE RESISTANCE, RG, (Ω)
02/13 Rev. 3
102
Irr
trr
VCC = 300V
VGE = ±15V
RG = 2.0Ω
Tj = 25°C
Inductive Load
102
EMITTER CURRENT, IE, (AMPERES)
103
102
103
COLLECTOR CURRENT, IC, (AMPERES)
GATE CHARGE VS. VGE
20
102
101
101
101
101
102
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING TIME, (ns)
104
0
100
10-1
REVERSE RECOVERY, Irr, (AMPERES), trr, (ns)
101
IC = 600A
Tj = 25°C
16
VCC = 200V
12
VCC = 300V
8
4
0
0
1000
2000
3000
4000
5000
GATE CHARGE, QG, (nC)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
101
100
102
VCC = 300V
VGE = ±15V
RG = 2.0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
Err
101
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
102
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
6
103
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
100
10-1
101
10-2
VCC = 300V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
100
10-1
100
Eon
Eoff
Err
101
GATE RESISTANCE, RG, (Ω)
102
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-2
10-1
100
101
10-1
Single Pulse
TC' = 25°C
Per Unit Base =
Rth(j-c') =
0.053°C/W
(IGBT)
Rth(j-c') =
0.078°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
02/13 Rev. 3