CM1400DU-24NF Mega Power Dual IGBTMOD™ Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1400 Amperes/1200 Volts TC MEASURED POINTS (THE SIDE OF Cu BASEPLATE) A D G P (8 PLACES) U L H H K W C2E1 C2 C1 G2 E1 E2 G1 X J F S Y CB Z T C1 U V Description: Powerex IGBTMOD™ Modules are designed for use in switching two IGBT applications. Each module consists of a half-bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. F J E2 E H H H H H H G G AA R (9 PLACES) M L LABEL G2 E2 C2 C2E1 C1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 5.91 Millimeters Dimensions 150.0 L Inches Millimeters 1.36 +0.04/-0.02 34.6 +1.0/-0.5 B 5.10 129.5 M 0.075±0.08 1.9±0.2 C 1.67±0.01 42.5±0.25 P 0.26 6.5 D 5.41±0.01 137.5±0.25 R M6 Metric M6 E 6.54 166.0 U 0.62 15.7 F 2.91±0.01 74.0±0.25 V 0.71 18.0 G 1.65 42.0 W 0.75 19.0 H 0.55 14.0 X 0.43 11.0 J 1.50±0.01 38.0±0.25 Y 0.83 21.0 K 0.16 4.0 Z 0.41 10.5 AA 0.22 5.5 Housing Type (J.S.T. MFG. CO. LTD) S = VHR-2N T = VHR-5N 4/12 Rev. 3 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ High Power UPS £ Large Motor Drives £ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1400DU-24NF is a 1200V (VCES), 1400 Ampere Dual IGBTMOD Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1400 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DU-24NF Mega Power Dual IGBTMOD™ 1400 Amperes/1200 Volts Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol Ratings Units Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current DC (TC' = 94°C)*5 IC 1400 Amperes Peak Collector Current (Pulse)*2 ICM 2800 Amperes Emitter Current (TC = 25°C) IE*1 1400 Amperes Peak Emitter Current (Pulse)*2 IEM*1 2800 Amperes Maximum Collector Dissipation (TC = 25°C) PC*3 3900 Watts Tj -40 to 150 °C Junction Temperature Storage Temperature*4 Tstg -40 to 125 °C Viso 2500 Volts Mounting Torque, M6 Mounting Screws – 40 in-lb Mounting Torque, M6 Main Terminal Screw – 40 in-lb Weight (Typical) – 1400 Grams Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 min.) Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Min. Typ. Max. VCE = VCES, VGE = 0V – – 1 mA VGE(th) IC = 140mA, VCE = 10V 6 7 8 Volts IGES ±VGE = VGES, VCE = 0V – – 1.5 µA ICES VCE(sat) Test Conditions IC = 1400A, VGE = 15V, Tj = 25°C*4 – 1.8 2.5 Volts – 2.0 – Volts (Without Lead Resistance) (Chip) IC = 1400A, VGE = 15V, Tj = 125°C*4 Module Lead Resistance R(lead) IC = 1400A, Terminal-Chip Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Turn-on Delay Time td(on) Units VCE = 10V, VGE = 0V VCC = 600V, IC = 1400A, VGE = 15V – 0.286 – – – mΩ 220 nF – – – 25 nF – 4.7 nF – 7200 – – – nC 800 ns Turn-on Rise Time tr VCC = 600V, IC = 1400A, – – 300 ns Turn-off Delay Time td(off) VGE = ±15V, – – 1000 ns tf RG = 0.22Ω, Inductive Load, – – 300 ns Reverse Recovery Time Turn-off Fall Time trr*1 IE = 1400A – – 700 ns Reverse Recovery Charge Qrr*1 – 90 – µC Emitter-Collector Voltage VEC*1 IE = 1400A, VGE = 0V – – 3.2 Volts (Without Lead Resistance) (Chip) *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *3 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *4 Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *8 The operation temperature is restrained by the permission temperature of female connector. 2 4/12 Rev.3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DU-24NF Mega Power Dual IGBTMOD™ 1400 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Case*7 Thermal Resistance, Junction to Case*7 Thermal Resistance, Junction to Contact Thermal Resistance*6 Test Conditions Min. Typ. Max. Rth(j-c)Q IGBT Part (1/2 Module) – – 0.032 K/W Rth(j-c)D FWDi Part (1/2 Module) – – 0.053 K/W Case to Heatsink, – 0.016 – K/W – – 0.014 K/W – – 0.023 K/W 0.22 – 2.2 Ω Rth(c-f) Units Thermal Grease Applied (1/2 Module) Thermal Resistance, Junction to Case*5 Rth(j-c')Q Per IGBT Part, TC Reference Point Under the Chips Thermal Resistance, Junction to Case*5 Rth(j-c')D Per FWDi Part, TC Reference Point Under the Chips External Gate Resistance RG *5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Case temperature (TC) measured point is shown in the device dtawing. OUTPUT CHARACTERISTICS (TYPICAL) 2400 13 12 2000 2000 1600 1600 11 1200 1200 800 10 400 0 9 8 0 1 2 3 4 5 6 7 8 800 400 0 9 10 0 4 8 12 16 4 3 2 1 0 20 VGE = 15V Tj = 25°C Tj = 125°C 400 600 1200 1600 2000 2400 2800 0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 10 103 8 6 IC = 1400A 4 IC = 560A IC = 2800A 2 0 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4/12 Rev. 3 20 103 Tj = 25°C Tj = 125°C 102 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2400 2800 Tj = 25°C VGE = 20V 15 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 2800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) VGE = 0V Cies 102 Coes 101 Cres 100 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DU-24NF Mega Power Dual IGBTMOD™ 1400 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(on) 101 102 tf VCC = 600V VGE = 15V RG = 0.22Ω Tj = 125°C Inductive Load 103 Irr trr 102 102 101 102 104 10-3 10-2 10-1 100 101 Per Unit Base Rth(j-c') = 0.014 K/W (IGBT) Rth(j-c') = 0.023 K/W (FWDi) 100 10-1 10-2 Single Pulse TC = 25°C 10-3 10-5 10-4 10-3 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 100 102 103 104 SWITCHING ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) REVERSE RECOVERY ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) VCC = 600V VGE = 15V Tj = 125°C IC = 1400A ESW(on) ESW(off) Inductive Load 0.5 1.0 1.5 2.0 EXTERNAL GATE RESISTANCE, RG, (Ω) 4 VCC = 600V VGE = 15V Tj = 125°C RG = 0.22Ω ESW(on) ESW(off) Inductive Load 101 COLLECTOR CURRENT, IC, (AMPERES) 102 0 102 TIME, (s) 103 101 16 VCC = 400V VCC = 600V 12 8 4 0 2000 0 2.5 4000 6000 8000 10000 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 104 103 IC = 1400A EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) VCC = 600V VGE = 15V RG = 0.22Ω Tj = 125°C Inductive Load 20 REVERSE RECOVERY ENERGY VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE) tr 102 GATE CHARGE, VGE 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(off) 103 REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) 104 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 102 VCC = 600V VGE = 15V Tj = 125°C RG = 0.22Ω Inductive Load 101 100 102 103 104 EMITTER CURRENT, IE, (AMPERES) 103 102 101 VCC = 600V VGE = 15V Tj = 125°C IC = 1400A Inductive Load 0 0.5 1.0 1.5 2.0 2.5 EXTERNAL GATE RESISTANCE, RG, (Ω) 4/12 Rev.3