CM300DX1-24NFJ Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts A D E J F J G Y (4 PLACES) AD AE AF H 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q K ST 47 U 24 Z R S T Q 48 U AA B AB 23 DETAIL "B" 1 W V X M L 2 3 4 5 6 7 8 N K AG 9 10 11 12 13 14 15 16 17 18 19 20 21 22 K P L DETAIL "A" AL AM AK AT AU C2E1(24) C2E1(23) AV AW Tr2 Di1 Di2 G2(38) Es2(39) AX Tr1 C AR AS AP Cs1(22) Es1(16) AN G1(15) AQ DETAIL "A" NC(2) DETAIL "B" AJ AH AC (4 PLACES) E2 (47) C1 (48) NC(1) *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.98 152.0 B 2.44 62.0 C 0.67+0.04/-0.0217.0+1.0/-0.5 D 5.39 137.0 E 4.79 121.7 F 4.33±0.02 110.0±0.5 G 3.89 99.0 H 3.72 94.5 J 0.53 13.5 K 0.15 3.81 L 0.28 7.25 M 0.30 7.75 N 1.95 49.53 P 0.9 22.86 Q 0.55 14.0 R 0.87 22.0 S 0.67 17.0 T 0.48 12.0 U 0.24 6.0 V 0.16 4.2 W 0.37 6.5 X 0.83 21.14 Y M6 M6 07/11 Rev. 0 Dimensions Inches Millimeters Z 1.53 39.0 AA 1.97±0.02 50.0±0.5 AB 2.26 57.5 AC 0.22 Dia. 5.5 Dia. AD 0.67+0.04/-0.0217.0+1.0/-0.5 AE 0.51 13.0 AF 0.27 7.0 AG 0.03 0.8 AH 0.81 20.5 AJ 0.12 3.0 AK 0.14 3.5 AL 0.21 5.4 AM 0.49 12.5 AN 0.15 3.81 AP 0.05 1.15 AQ 0.025 0.65 AR 0.29 7.4 AS 0.05 1.2 AT 0.17 Dia. 4.3 Dia. AU 0.10 Dia. 2.5 Dia. AV 0.08 Dia. 2.1 Dia. AW 0.06 1.5 AX 0.49 12.5 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM300DX1-24NFJ is a 1200V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM300 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DX1-24NFJ Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolRatingUnits Collector-Emitter Voltage (G-E Short-circuited) VCES 1200Volts Gate-Emitter Voltage (C-E Short-circuited) VGES ±20Volts Collector Current (Operation)*4IC 300Amperes Collector Current (Pulse)*3ICRM 600Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 1890Watts Emitter Current (Operation)*4 Emitter Current (Pulse)*3 IE*1 300Amperes *1 IERM Junction Temperature 600Amperes Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 2500Vrms *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 16.2 Di2 Tr2 Di2 Tr2 47 24 29.8 Di1 Di1 Tr1 Tr1 48 38.9 23 1 LABEL SIDE 27.2 2 3 4 5 6 7 92.8 80.5 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 42.1 28.6 0 Each mark points to the center position of each chip. Tr1 / Tr2: IGBT Di1 / Di2: FWDi *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 2 07/11 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DX1-24NFJ Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES ±VGE = VGES, VCE = 0V — — 1 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C*5 — 5.0 6.5 Volts IC = 300A, VGE = 15V, Tj = 125°C*5 — 5.0 — Volts — — 47 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time nF 1.1 nF — 1360 — nC VCC = 600V, IC = 300A, — — 300 ns tr VGE = ±15V, RG = 1.0Ω, — — 80 ns td(off) Inductive Load — — 500 ns — — 150 ns — 5.0 6.5 Volts IE = 300A, VGE = 0V, Tj = 125°C*5 — 3.0 — Volts VCC = 600V, IE = 300A, VGE = ±15V, — — 150 ns RG = 1.0Ω, Inductive Load — 6.5 — µC Main Terminals-Chip, — — — mΩ TC = 25°C, per Switch*2 0.56 0.8 1.04 Ω Switch*2 1.12 1.6 2.08 Ω 1.0 — 10 Ω tf IE = 300A, VGE = 0V, Tj = 25°C*5 trr*1 Reverse Recovery Time *1 Qrr Internal Lead Resistance 5.6 VCC = 600V, IC = 300A, VGE = 15V VEC*1 Reverse Recovery Charge — — QG Fall Time Emitter-Collector Voltage — — td(on) Rise Time Turn-off Delay Time VCE = 10V , VGE = 0V RCC' + EE' Per Switch,TC = 25°C*2 Internal Gate Resistance rg TC = 125°C, per External Gate Resistance RG Per Switch *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 16.2 Di2 Tr2 Di2 Tr2 47 24 29.8 Di1 Di1 Tr1 Tr1 48 38.9 23 1 LABEL SIDE 27.2 2 3 4 5 6 7 92.8 80.5 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 42.1 28.6 0 Each mark points to the center position of each chip. Tr1 / Tr2: IGBT Di1 / Di2: FWDi *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 07/11 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DX1-24NFJ Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts Thermal Characteristics Characteristics Symbol Test Conditions Min. Typ. Max. Units Rth(j-c)Q Per IGBT Part*2 — — 0.066 K/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi Part*2 — — 0.093 K/W Contact Thermal Resistance Rth(c-s) Per 1 Module*2,*6 — 0.015 — K/W Min. Typ. Max. Units Thermal Resistance, Junction to Case (Case to Heatsink) Thermal Grease Applied Mechanical Characteristics Characteristics Symbol Mounting Torque Test Conditions Mt Main Terminals, M6 Screw 31 35 40 in-lb Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb — 330 — Grams On Centerline X, Y*7 ±0 — ±100 µm Weight m Flatness of Baseplate ec *2 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 16.2 Di2 Tr2 Di2 Tr2 47 24 29.8 Di1 Di1 Tr1 Tr1 48 1 LABEL SIDE 27.2 38.9 23 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 92.8 80.5 42.1 28.6 0 Each mark points to the center position of each chip. Tr1 / Tr2: IGBT Di1 / Di2: FWDi – : CONCAVE + : CONVEX *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. X MOUNTING SIDE MOUNTING SIDE 4 Y MOUNTING SIDE – : CONCAVE + : CONVEX 07/11 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM300DX1-24NFJ Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C 10 15 VGE = 20V 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 500 12 400 300 11 200 10 100 9 0 0 2 4 6 8 6 4 2 0 100 200 300 400 500 IC = 300A 6 4 IC = 120A 2 0 600 IC = 600A 8 Tj = 25°C 6 14 16 18 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 CAPACITANCE, Cies, Coes, Cres, (nF) 101 Coes 100 Cres 0 2 4 6 10-1 10-1 8 100 101 tf td(off) td(on) 102 101 101 102 tr 102 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE (TYPICAL) 101 10-1 td(off) td(on) tr 100 GATE RESISTANCE, RG, (Ω) 07/11 Rev. 0 tf 101 20 Irr trr 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 101 101 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY, Irr (A), trr (ns) 103 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load 20 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load Cies VGE = 0V SWITCHING TIME, (ns) 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 103 10 COLLECTOR CURRENT, IC, (AMPERES) Tj = 25°C Tj = 125°C 101 8 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 8 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) IC = 300A VCC = 600V 15 10 5 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 101 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load Eon Eoff Err 100 101 SWITCHING ENERGY, (mJ/PULSE) SWITCHING ENERGY, (mJ/PULSE) 102 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 6 103 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM300DX1-24NFJ Dual IGBTMOD™ NX-Series Module 300 Amperes/1200 Volts 100 10-1 101 10-2 100 10-1 Eon Eoff Err 100 101 GATE RESISTANCE, RG, (Ω) 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.066°K/W (IGBT) Rth(j-c) = 0.093°K/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 07/11 Rev. 0