POWEREX CM150EXS-24S

CM150EXS-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Chopper IGBT
NX-Series Module
150 Amperes/1200 Volts
A
D
E
K
F
G
H
J
6
S
T
J
5
4
U
3
M
7
L
2
P B
AL (4 PLACES)
N
8
AK (4 PLACES)
1
Q
R
DETAIL "A"
Y
V W X
TH1
(6)
Th
N
T
C
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3
±0.2
over
3 to 6
±0.3
over
6 to 30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to ±0.4
DETAIL "B"
AB
TH2
(5)
Es(4) G(3)
AC
AD
AE
AA
AF
AG
Tr
E(7)
C
C(2)
K(8)
Z
AH AJ
A(1)
Di
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.09
104.0
U
0.27
7.0
B
2.44
62.0
V
0.67
17.0
C
0.47
11.9
W
0.64
16.4
D
3.5
89.0
X
0.51
13.1
E
2.44
62.0
Y
0.17
4.4
F
0.53
13.5
Z
0.49
12.5
G
0.69
17.66
AA
H
0.75
19.05
AB
0.17 Dia.
0.12
4.3 Dia.
3.0
J
0.14
3.8
AC
0.102 Dia.
2.6 Dia.
K
0.16
4.2
AD
0.088 Dia.
2.25 Dia.
L
1.97
50.0
AE
0.15
3.81
M
0.55
14.0
AF
0.045
1.15
N
0.87
22.0
AG
0.025
0.65
P
2.26
57.5
AH
0.05
1.2
Q
1.83
46.5
AJ
R
2.9
73.71
AK
0.21 Dia.
5.5 Dia.
S
0.8
20.5
AL
M5
M5
T
0.67
17.0
07/12 Rev. 0
0.29
7.4
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of one IGBT Transistor
and one super-fast recovery diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast
Recovery Clamp Diode
£ RoHS Compliant
£ Isolated Copper Baseplate
for Easy Heat Sinking
Applications:
£ DC/DC Converter
£ DC Motor Control
£ Brake Circuit
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM150EXS-24S is a 1200V
(VCES), 150 Ampere Chopper
IGBT Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM150 24
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
SymbolRating Units
Collector-Emitter Voltage (VGE = 0V)
VCES1200 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES±20 Volts
Collector Current (DC, TC = 120°C)*2IC
Collector Current (Pulse,
150Amperes
Repetitive)*3I
CRM 300Amperes
Total Power Dissipation (TC = 25°C)*2,*4Ptot 1150Watts
Repetitive Peak Reverse Voltage (Clamp Diode Part, VGE = 0V)
VRRM1200 Volts
Forward Current (Clamp Diode Part, TC = 25°C)*2,*4 Forward Current (Clamp Diode Part, Pulse,
Repetitive)*3
IF*1
*1
IFRM
Maximum Junction Temperature
150Amperes
300Amperes
Tj(max)+175 °C
Operating Junction Temperature
Tj(op)
-40 to +150
°C
Storage Temperature
Tstg
-40 to +125
°C
TC
-40 to +125
°C
Case Temperature
51.1
39.9
18.7
35.4
37.9
38.7
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
VISO2500Volts
0
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
Th
Tr
Di
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT
Di: Clamp Diode
Th: NTC Thermistor
2
07/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1
mA
Gate-Emitter Leakage Current
IGES
±VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
5.4
6
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 150A, VGE = 15V, Tj = 25°C*6
—
1.80
2.25
Volts
(Terminal)
IC = 150A, VGE = 15V, Tj = 125°C*6 —
2.00
—
Volts
Collector-Emitter Cutoff Current
IC = 150A, VGE = 15V, Tj =
Collector-Emitter Saturation Voltage
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
QG
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
—2.05
IC = 150A, VGE = 15V, Tj = 25°C*6
VCE(sat)
(Chip)
150°C*6
—
Volts
2.15
Volts
—
1.70
IC = 150A, VGE = 15V, Tj = 125°C*6 —
1.90
—
Volts
IC = 150A, VGE = 15V, Tj = 150°C*6
—1.95
—
Volts
VCE = 10V, VGE = 0V
— —
15
nF
—
—
3.0
nF
— —
0.25
nF
—
nC
VCC = 600V, IC = 150A, VGE = 15V
—
— —
800
ns
tr
VCC = 600V, IC = 150A, VGE = ±15V,
—
—
200
ns
td(off)
RG = 0Ω, Inductive Load
—
—
600
ns
— —
300
ns
td(on)
tf
350
Repetitive Peak Reverse Current
IRRM
VR = VRRM
1
mA
Forward Voltage Drop
VF*1
IF = 150A, VGE = 0V, Tj = 25°C*6 —
1.80
2.25
Volts
IF = 150A, VGE = 0V, Tj = 125°C*6 —
1.80
—
Volts
IF = 150A, VGE = 0V, Tj = 150°C*6
—1.80
—
Volts
Clamp Di Part
Forward Voltage Drop
Clamp Di Part
(Terminal)
*1
VF
IF = 150A, VGE = 0V, Tj =
——
25°C*6
IF = 150A, VGE = 0V, Tj =
Reverse Recovery Time
trr*1
*1
IF = 150A, VGE = 0V, Tj = 125°C*6 (Chip)
150°C*6
VCC = 600V, IF = 150A, VGE = ±15V
—
1.70
2.15
Volts
—
1.70
—
Volts
—1.70
—
Volts
— —
300
ns
Reverse Recovery Charge
Qrr
RG = 0Ω, Inductive Load, Clamp Di Part
—
8.0
—
µC
Turn-on Switching Energy per Pulse
Eon
VCC = 600V, IC = IF = 150A,
—
24.2
—
mJ
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 0Ω, Tj = 150°C,
—
16.0
—
mJ
Reverse Recovery Energy per Pulse
Err*1
Inductive Load, Clamp Di Part
—
12.2
—
mJ
——
—
mΩ
—
—
Ω
Internal Lead Resistance
RCC' + EE'
Main Terminals-Chip,
Per Switch,TC = 25°C*2
rg
0
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
51.1
39.9
18.7
13
35.4
37.9
38.7
Internal Gate Resistance
Th
Tr
Di
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT
Di: Clamp Diode
Th: NTC Thermistor
07/12 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Symbol
Zero Power Resistance
R25
Deviation of Resistance
∆R/R
B Constant
Test Conditions
TC =
Min.
25°C*2
TC = 100°C, R100 = 493Ω
B(25/50)
Max.
Units
4.855.00
5.15
kΩ
-7.3
+7.8
%
Equation*8
—
—3375
—
K
P25
TC = 25°C*2
—
—
10
mW
Thermal Resistance, Junction to Case*2
Rth(j-c)Q
Per IGBT
—
—
0.13
K/W
Case*2
Rth(j-c)D
Per Clamp Diode
—
—
0.23
K/W
Rth(c-f)
Thermal Grease Applied
—
25
—
K/kW
22
27
31
in-lb
Power Dissipation
Approximate by
Typ.
Thermal Resistance Characteristics
Thermal Resistance, Junction to
Contact Thermal Resistance,
Case to Heatsink*2
(Per 1 Module)*7
Mechanical Characteristics
Mounting Torque
Mt
Main Terminals, M5 Screw Ms
Mounting to Heatsink, M5 Screw
22
27
31
in-lb
Creepage Distance
ds
Terminal to Terminal 20
—
—
mm
Terminal to Baseplate
17
—
—
mm
Clearance
da
Terminal to Terminal 12
—
—
mm
Terminal to Baseplate
10
—
Weight
m
Flatness of Baseplate
ec
—210
—
mm
—
Grams
On Centerline X, Y*5
-100
—
+100
µm
VCC
Applied Across P-N
—
600
850
Volts
Gate-Emitter Drive Voltage
VGE(on)
Applied Across G-E
13.515.0
16.5
Volts
External Gate Resistance
RG
30
Ω
Recommended Operating Conditons, Ta = 25°C
0
R25
1
1
)/(
–
)
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*8 B(25/50) = In(
0
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
51.1
39.9
– : CONCAVE
+ : CONVEX
18.7
MOUNTING SIDE
MOUNTING SIDE
4
Th
Tr
Di
0
Y
X
—
35.4
37.9
38.7
(DC) Supply Voltage
MOUNTING
SIDE
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT
Di: Clamp Diode
Th: NTC Thermistor
– : CONCAVE
+ : CONVEX
07/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
3.5
Tj =
25°C
12
13.5
15
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
250
VGE = 20V
200
11
150
100
10
50
9
0
0
2
4
6
8
2.5
2.0
1.5
1.0
0.5
0
50
100
150
200
250
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
Tj = 25°C
8
IC = 300A
6
IC = 150A
4
IC = 60A
2
0
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
07/12 Rev. 0
300
103
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
3.0
0
10
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
300
20
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
102
101
0
0.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
Cies
101
td(on)
SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
102
Coes
100
Cres
10-1
VGE = 0V
Tj = 25°C
10-2
10-1
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
103
td(on)
tf
102
101
101
td(off)
td(off)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
102
COLLECTOR CURRENT, IC, (AMPERES)
103
SWITCHING TIME, (ns)
td(on)
SWITCHING TIME, (ns)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
6
tf
tr
102
101
101
102
td(off)
tr
tf
102
101
100
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive Load
101
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
07/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
103
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
SWITCHING TIME, (ns)
td(on)
tr
tf
102
101
100
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 150°C
Inductive Load
101
102
REVERSE RECOVERY, Irr (A), trr (ns)
td(off)
102
101
101
103
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. VGE
20
102
101
101
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY, Irr (A), trr (ns)
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
103
07/12 Rev. 0
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
IC = 150A
VCC = 600V
Tj = 25°C
15
10
5
0
0
100
200
300
400
500
GATE CHARGE, QG, (nC)
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Err
102
102
101
Eon
Eoff
Err
102
103
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
102
101
Eon
Eoff
Err
100
101
GATE RESISTANCE, RG, (Ω)
8
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
100
101
103
VCC = 600V
VGE = ±15V
IC/IE = 150A
Tj = 125°C
100
10-1
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
101
100
101
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
102
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
101
VCC = 600V
VGE = ±15V
IC/IE = 150A
Tj = 150°C
100
10-1
100
Eon
Eoff
Err
101
102
GATE RESISTANCE, RG, (Ω)
07/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
CM150EXS-24S
Chopper IGBT NX-Series Module
150 Amperes/1200 Volts
100
10-3
10-1
10-2
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
10-2
10-1
100
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.13°K/W
(IGBT)
Rth(j-c) =
0.23°K/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
07/12 Rev. 0
9