CM150EXS-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBT NX-Series Module 150 Amperes/1200 Volts A D E K F G H J 6 S T J 5 4 U 3 M 7 L 2 P B AL (4 PLACES) N 8 AK (4 PLACES) 1 Q R DETAIL "A" Y V W X TH1 (6) Th N T C Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 DETAIL "B" AB TH2 (5) Es(4) G(3) AC AD AE AA AF AG Tr E(7) C C(2) K(8) Z AH AJ A(1) Di Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.09 104.0 U 0.27 7.0 B 2.44 62.0 V 0.67 17.0 C 0.47 11.9 W 0.64 16.4 D 3.5 89.0 X 0.51 13.1 E 2.44 62.0 Y 0.17 4.4 F 0.53 13.5 Z 0.49 12.5 G 0.69 17.66 AA H 0.75 19.05 AB 0.17 Dia. 0.12 4.3 Dia. 3.0 J 0.14 3.8 AC 0.102 Dia. 2.6 Dia. K 0.16 4.2 AD 0.088 Dia. 2.25 Dia. L 1.97 50.0 AE 0.15 3.81 M 0.55 14.0 AF 0.045 1.15 N 0.87 22.0 AG 0.025 0.65 P 2.26 57.5 AH 0.05 1.2 Q 1.83 46.5 AJ R 2.9 73.71 AK 0.21 Dia. 5.5 Dia. S 0.8 20.5 AL M5 M5 T 0.67 17.0 07/12 Rev. 0 0.29 7.4 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of one IGBT Transistor and one super-fast recovery diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Clamp Diode £ RoHS Compliant £ Isolated Copper Baseplate for Easy Heat Sinking Applications: £ DC/DC Converter £ DC Motor Control £ Brake Circuit Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM150EXS-24S is a 1200V (VCES), 150 Ampere Chopper IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM150 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150EXS-24S Chopper IGBT NX-Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolRating Units Collector-Emitter Voltage (VGE = 0V) VCES1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (DC, TC = 120°C)*2IC Collector Current (Pulse, 150Amperes Repetitive)*3I CRM 300Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 1150Watts Repetitive Peak Reverse Voltage (Clamp Diode Part, VGE = 0V) VRRM1200 Volts Forward Current (Clamp Diode Part, TC = 25°C)*2,*4 Forward Current (Clamp Diode Part, Pulse, Repetitive)*3 IF*1 *1 IFRM Maximum Junction Temperature 150Amperes 300Amperes Tj(max)+175 °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C TC -40 to +125 °C Case Temperature 51.1 39.9 18.7 35.4 37.9 38.7 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. VISO2500Volts 0 Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) Th Tr Di 0 LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 2 07/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150EXS-24S Chopper IGBT NX-Series Module 150 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES ±VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C*6 — 1.80 2.25 Volts (Terminal) IC = 150A, VGE = 15V, Tj = 125°C*6 — 2.00 — Volts Collector-Emitter Cutoff Current IC = 150A, VGE = 15V, Tj = Collector-Emitter Saturation Voltage Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge QG Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time —2.05 IC = 150A, VGE = 15V, Tj = 25°C*6 VCE(sat) (Chip) 150°C*6 — Volts 2.15 Volts — 1.70 IC = 150A, VGE = 15V, Tj = 125°C*6 — 1.90 — Volts IC = 150A, VGE = 15V, Tj = 150°C*6 —1.95 — Volts VCE = 10V, VGE = 0V — — 15 nF — — 3.0 nF — — 0.25 nF — nC VCC = 600V, IC = 150A, VGE = 15V — — — 800 ns tr VCC = 600V, IC = 150A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 600 ns — — 300 ns td(on) tf 350 Repetitive Peak Reverse Current IRRM VR = VRRM 1 mA Forward Voltage Drop VF*1 IF = 150A, VGE = 0V, Tj = 25°C*6 — 1.80 2.25 Volts IF = 150A, VGE = 0V, Tj = 125°C*6 — 1.80 — Volts IF = 150A, VGE = 0V, Tj = 150°C*6 —1.80 — Volts Clamp Di Part Forward Voltage Drop Clamp Di Part (Terminal) *1 VF IF = 150A, VGE = 0V, Tj = —— 25°C*6 IF = 150A, VGE = 0V, Tj = Reverse Recovery Time trr*1 *1 IF = 150A, VGE = 0V, Tj = 125°C*6 (Chip) 150°C*6 VCC = 600V, IF = 150A, VGE = ±15V — 1.70 2.15 Volts — 1.70 — Volts —1.70 — Volts — — 300 ns Reverse Recovery Charge Qrr RG = 0Ω, Inductive Load, Clamp Di Part — 8.0 — µC Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IF = 150A, — 24.2 — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, Tj = 150°C, — 16.0 — mJ Reverse Recovery Energy per Pulse Err*1 Inductive Load, Clamp Di Part — 12.2 — mJ —— — mΩ — — Ω Internal Lead Resistance RCC' + EE' Main Terminals-Chip, Per Switch,TC = 25°C*2 rg 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. 51.1 39.9 18.7 13 35.4 37.9 38.7 Internal Gate Resistance Th Tr Di 0 LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 07/12 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150EXS-24S Chopper IGBT NX-Series Module 150 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant Test Conditions TC = Min. 25°C*2 TC = 100°C, R100 = 493Ω B(25/50) Max. Units 4.855.00 5.15 kΩ -7.3 +7.8 % Equation*8 — —3375 — K P25 TC = 25°C*2 — — 10 mW Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per IGBT — — 0.13 K/W Case*2 Rth(j-c)D Per Clamp Diode — — 0.23 K/W Rth(c-f) Thermal Grease Applied — 25 — K/kW 22 27 31 in-lb Power Dissipation Approximate by Typ. Thermal Resistance Characteristics Thermal Resistance, Junction to Contact Thermal Resistance, Case to Heatsink*2 (Per 1 Module)*7 Mechanical Characteristics Mounting Torque Mt Main Terminals, M5 Screw Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 20 — — mm Terminal to Baseplate 17 — — mm Clearance da Terminal to Terminal 12 — — mm Terminal to Baseplate 10 — Weight m Flatness of Baseplate ec —210 — mm — Grams On Centerline X, Y*5 -100 — +100 µm VCC Applied Across P-N — 600 850 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across G-E 13.515.0 16.5 Volts External Gate Resistance RG 30 Ω Recommended Operating Conditons, Ta = 25°C 0 R25 1 1 )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *8 B(25/50) = In( 0 *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 51.1 39.9 – : CONCAVE + : CONVEX 18.7 MOUNTING SIDE MOUNTING SIDE 4 Th Tr Di 0 Y X — 35.4 37.9 38.7 (DC) Supply Voltage MOUNTING SIDE LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor – : CONCAVE + : CONVEX 07/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150EXS-24S Chopper IGBT NX-Series Module 150 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 3.5 Tj = 25°C 12 13.5 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 250 VGE = 20V 200 11 150 100 10 50 9 0 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 0 50 100 150 200 250 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) Tj = 25°C 8 IC = 300A 6 IC = 150A 4 IC = 60A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 07/12 Rev. 0 300 103 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 3.0 0 10 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 20 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 102 101 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150EXS-24S Chopper IGBT NX-Series Module 150 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 Cies 101 td(on) SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Coes 100 Cres 10-1 VGE = 0V Tj = 25°C 10-2 10-1 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 td(on) tf 102 101 101 td(off) td(off) tr VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 102 COLLECTOR CURRENT, IC, (AMPERES) 103 SWITCHING TIME, (ns) td(on) SWITCHING TIME, (ns) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 6 tf tr 102 101 101 102 td(off) tr tf 102 101 100 VCC = 600V VGE = ±15V IC = 150A Tj = 125°C Inductive Load 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 07/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150EXS-24S Chopper IGBT NX-Series Module 150 Amperes/1200 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 SWITCHING TIME, (ns) td(on) tr tf 102 101 100 VCC = 600V VGE = ±15V IC = 150A Tj = 150°C Inductive Load 101 102 REVERSE RECOVERY, Irr (A), trr (ns) td(off) 102 101 101 103 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 20 102 101 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 103 07/12 Rev. 0 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr IC = 150A VCC = 600V Tj = 25°C 15 10 5 0 0 100 200 300 400 500 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150EXS-24S Chopper IGBT NX-Series Module 150 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err 102 102 101 Eon Eoff Err 102 103 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 101 Eon Eoff Err 100 101 GATE RESISTANCE, RG, (Ω) 8 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C 100 101 103 VCC = 600V VGE = ±15V IC/IE = 150A Tj = 125°C 100 10-1 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 101 100 101 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 101 VCC = 600V VGE = ±15V IC/IE = 150A Tj = 150°C 100 10-1 100 Eon Eoff Err 101 102 GATE RESISTANCE, RG, (Ω) 07/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM150EXS-24S Chopper IGBT NX-Series Module 150 Amperes/1200 Volts 100 10-3 10-1 10-2 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.13°K/W (IGBT) Rth(j-c) = 0.23°K/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 07/12 Rev. 0 9