CM75TX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Six IGBT NX-Series Module 75 Amperes/1200 Volts A E F K Q K J M AE AF AD K G K K K M K AA AB C K M AC DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 54 55 K 56 L AM K K K 30 29 27 58 26 60 K 61 K K K H 2 K 3 L 4 5 6 K U X 7 8 L R B P 25 AG 24 23 DETAIL "B" 1 L AK AL AH S 28 57 59 V N (4 PLACES) AJ W 9 10 11 12 13 14 15 16 17 18 19 20 21 22 K K L L K L D DETAIL "A" K T DETAIL "B" AH Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 Y P1(28~30) P(54~56) GUP(1) ESUP(2) GVP(9) ESVP(10) GWP(17) ESWP(18) U(48~50) V(42~44) W(36~38) GUN(5) GVN(13) GWN(21) ESUN(6) N(59~61) ESVN(14) ESWN(22) TH1 (31) TH2 (32) N1(23~25) Caution: Each (three) pin terminal of P/N/P1/N1/U/V/W is connected in the module, however, all three pins should be used for external wiring. Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T 03/13 Rev. 4 Inches 4.79 2.44 0.51 4.49 4.33±0.02 3.9 3.72 0.59 0.96 0.15 0.45 0.6 0.22 Dia. 2.13 0.30 1.97±0.02 2.26 0.165 Millimeters 121.7 62.0 13.0 114.05 110.0±0.5 99.0 94.5 15.0 24.52 3.81 11.43 15.24 5.5 Dia. 54.2 7.75 50.0±0.5 57.5 4.2 Dimensions U V W X Y Z AA AB AC AD AE AF AG AH AJ AK AL AM Inches 0.16 0.46 0.14 0.14 0.03 0.28 0.81 0.67 0.03 0.05 0.29 0.047 0.49 0.12 0.17 Dia. 0.102 Dia. 0.088 Dia. 1.53 Millimeters 4.06 11.66 3.75 3.5 0.8 7.0 20.5 17.0 0.65 1.15 7.4 1.2 12.5 3.0 4.3 Dia. 2.6 Dia. 2.25 Dia 39 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM75TX-24S is a 1200V (VCES), 75 Ampere Six IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM75 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75TX-24S Six IGBT NX-Series Module 75 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics SymbolRating Units Collector-Emitter Voltage (VGE = 0V) VCES1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (DC, TC = 122°C)*2,*4IC Collector Current 75Amperes (Pulse)*3I CRM 150Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 600Watts Emitter Current (TC = 25°C)*2 IE*1 Emitter Current (Pulse)*3 75Amperes IERM*1 150Amperes Module Characteristics SymbolRating Units Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO2500Volts Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max)175 °C Tstg -40 to +125 °C 51.6 0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 104.5 Storage Temperature 96.1 °C 82.6 -40 to +150 64.1 Tj(op) 33.1 °C Operating Junction Temperature, Continuous Operation (Under Switching) 20.6 Maximum Case Temperature*2TC(max)125 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 19.9 28.4 54 55 56 57 58 Di UP Tr UP Di VP Tr VP Di UN Tr UN Di VN Tr VN Di WP Tr WP Di WN Th Tr WN 30 29 28 27 26 59 25 60 24 61 23 1 2 3 4 5 6 7 8 21.6 24.1 30.0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N: IGBT 2 Di*P / Di*N: FWDi Th: NTC Thermistor 03/13 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75TX-24S Six IGBT NX-Series Module 75 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts (Terminal) IC = 75A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts IC = 75A, VGE = 15V, Tj = 150°C*5 —2.05 — Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IC = 75A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts —1.95 — Volts — — 7.5 nF — — 1.5 nF — — 0.13 nF — 175 — nC — — 300 ns IC = 75A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG 150°C*5 VCE = 10V, VGE = 0V VCC = 600V, IC = 75A, VGE = 15V td(on) tr VCC = 600V, IC = 75A, VGE = ±15V, — — 200 ns td(off) RG = 8.2Ω, Inductive Load — — 600 ns — — 300 ns VEC*1 tf IE = 75A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts (Terminal) IE = 75A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts IE = 75A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts VEC IE = 75A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IE = 75A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts *1 IE = 75A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts VCC = 600V, IE = 75A, VGE = ±15V — — 300 ns Reverse Recovery Charge *1 Qrr RG = 8.2Ω, Inductive Load — 4.0 — µC Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 75A, — 7.3 — mJ Reverse Recovery Time trr*1 Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 8.2Ω, — 8.0 — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 6.9 — mJ Main Terminals-Chip, — — 2.4 mΩ — 0 — Ω Internal Lead Resistance RCC' + EE' 104.5 96.1 82.6 51.6 33.1 Per Switch 20.6 rg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 0 Internal Gate Resistance 64.1 Per Switch,TC = 25°C*4 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 19.9 28.4 54 55 56 57 58 Di UP Tr UP Di VP Tr VP Di UN Tr UN Di VN Tr VN Di WP Tr WP Di WN Th Tr WN 30 29 28 27 26 59 25 60 24 61 23 1 2 3 4 5 6 7 8 21.6 24.1 30.0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N: IGBT 03/13 Rev. 4 Di*P / Di*N: FWDi Th: NTC Thermistor 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75TX-24S Six IGBT NX-Series Module 75 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant Test Conditions TC = Min. 25°C*4 Typ. Max. Units 4.855.00 5.15 kΩ -7.3 +7.8 % TC = 100°C*4, R100 = 493Ω B(25/50) Approximate by Equation*6 —3375 — K — 10 mW — 0.25 K/W — — 0.40 K/W 15 — K/kW P25 TC = 25°C*4 Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Inverter IGBT — Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Inverter FWD Rth(c-f) Thermal Grease Applied, Power Dissipation — — Thermal Resistance Characteristics Contact Thermal Resistance, Case to Heatsink*4 — Per 1 Module*7 Mechanical Characteristics Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 10.28 — — mm Terminal to Baseplate 14.27 — — mm Clearance da Terminal to Terminal 10.28 — — mm Terminal to Baseplate 12.33 — Weight m Flatness of Baseplate ec — mm — Grams — ±100 µm 600 850 Volts 13.515.0 16.5 Volts 82 Ω —300 ±0 On Centerline X, Y*8 Recommended Operating Conditons, Ta = 25°C DC Supply Voltage VCC Gate-Emitter Drive Voltage Applied Across P-N Terminals VGE(on) — Applied Across G*P-Es*P/G*N-Es*N (* = U, V, W) Terminals – : CONCAVE + : CONVEX MOUNTING SIDE 4 104.5 96.1 82.6 — 64.1 51.6 33.1 8.2 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 19.9 28.4 54 55 56 57 58 Di UP Tr UP Di VP Tr VP Di UN Tr UN Di VN Tr VN Di WP Tr WP Di WN Th Tr WN 30 29 28 27 26 59 25 60 24 61 23 1 2 3 4 5 6 7 8 21.6 24.1 30.0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 LABEL SIDE Each mark points to the center position of each chip. X MOUNTING SIDE Per Switch 20.6 RG *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. R25 1 1 *6 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 0 External Gate Resistance Y MOUNTING SIDE Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor – : CONCAVE + : CONVEX 03/13 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75TX-24S Six IGBT NX-Series Module 75 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 150 3.5 12 13.5 15 100 11 75 50 10 25 9 Tj = 25°C 0 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 50 0 100 150 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 Tj = 25°C 8 IC = 150A 6 IC = 75A 4 IC = 30A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 03/13 Rev. 4 3.0 0 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 125 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 20 Tj = 25°C Tj = 125°C Tj = 150°C 102 101 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75TX-24S Six IGBT NX-Series Module 75 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) Cres 10-1 100 101 102 td(on) 101 VCC = 600V tr VGE = ±15V RG = 8.2Ω Tj = 125°C Inductive Load 100 100 102 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 103 td(off) tf 102 td(on) VCC = 600V tr VGE = ±15V RG = 8.2Ω Tj = 150°C Inductive Load 100 100 VCC = 600V VGE = ±15V IC = 75A Tj = 125°C t Inductive Load f td(off) 102 td(on) tr 101 COLLECTOR CURRENT, IC, (AMPERES) 6 SWITCHING TIME, (ns) Coes 100 101 td(off) tf Cies 101 10-2 10-1 SWITCHING TIME, (ns) 103 VGE = 0V SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 102 102 101 100 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 03/13 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75TX-24S Six IGBT NX-Series Module 75 Amperes/1200 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 VCC = 600V VGE = ±15V IC = 75A Tj = 150°C tf Inductive Load td(off) 102 td(on) tr 101 100 VCC = 600V VGE = ±15V RG = 8.2Ω Tj = 125°C Inductive Load Irr trr 102 101 100 102 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 102 20 VCC = 600V VGE = ±15V RG = 8.2Ω Tj = 150°C Inductive Load Irr trr 101 100 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 REVERSE RECOVERY, Irr (A), trr (ns) 101 REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING TIME, (ns) 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 EMITTER CURRENT, IE, (AMPERES) 03/13 Rev. 4 102 VCC = 600V IC = 75A Tj = 25°C 15 10 5 0 0 50 100 150 200 250 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM75TX-24S Six IGBT NX-Series Module 75 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 10-1 100 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 102 101 100 100 101 100 102 10-1 100 101 101 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 VCC = 600V VGE = ±15V IC/IE = 75A Tj = 125°C Eon Eoff Err 101 102 101 100 100 REVERSE RECOVERY ENERGY, Err, (mJ) 100 102 VCC = 600V VGE = ±15V RG = 8.2Ω Tj = 150°C Eon Eoff Err COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 8 SWITCHING ENERGY, Eon, Eoff, (mJ) 101 101 REVERSE RECOVERY ENERGY, Err, (mJ) 100 102 VCC = 600V VGE = ±15V RG = 8.2Ω Tj = 125°C Eon Eoff Err SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 100 102 VCC = 600V VGE = ±15V IC/IE = 75A Tj = 150°C Eon Eoff Err 101 102 GATE RESISTANCE, RG, (Ω) 03/13 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM75TX-24S Six IGBT NX-Series Module 75 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.25°K/W (IGBT) Rth(j-c) = 0.40°K/W (FWDi) 10-2 10-3 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 03/13 Rev. 4 9