< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 4 1 0 A* Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ●Flat base Type ●Copper base plate ●RoHS Directive compliance ●UL Recognized under UL1557, File E323585 Dual (Half-Bridge) *. DC current rating is limited by power terminals. APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION 3 Tolerance 0.5 to ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 Di1 C2E1 Tr2 E2 Di2 Publication Date : July 2012 1 Tr1 C1 G1 E1 (ES1) Division of Dimension E2 G2 (ES2) Tolerance otherwise specified < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ±20 V IC Item Ptot IE IERM (Note.1) Emitter current 410 * (Note.3) Pulse, Repetitive Total power dissipation (Note.1) (Note.2, 4) DC, TC=125 °C Collector current ICRM Conditions TC=25 °C (Note.2, 4) 3330 TC=25 °C (Note.2, 4) 410 * Pulse, Repetitive A 900 (Note.3) W A 900 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 Tjmax Maximum junction temperature - 175 V Tcmax Maximum case temperature (Note.4) 125 Tjopr Operating junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 °C °C ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=45 mA, VCE=10 V 5.4 6.0 6.6 V IC=450 A VCEsat Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time T j =25 °C - 1.80 2.25 VGE=15 V, Terminal, T j =125 °C - 2.05 - Refer to figure of test circuit T j =150 °C - 2.10 - IC=450 A (Note.1) Emitter-collector voltage trr (Note.1) Reverse recovery time Qrr (Note.1) (Note.5) , T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - Chip T j =150 °C - 1.95 - - - 45 , VCE=10 V, G-E short-circuited VCC=600 V, IC=450 A, VGE=15 V VCC=600 V, IC=450 A, VGE=±15 V, RG=0 Ω, Inductive load - - 9.0 - - 0.75 - 1050 - - - 800 - - 200 - - 600 nF nC ns - - 300 1.85 2.30 G-E short-circuited, Terminal, T j =125 °C - 1.85 - Refer to figure of test circuit T j =150 °C - 1.85 - T j =25 °C - 1.70 2.15 G-E short-circuited, T j =125 °C - 1.70 - Chip T j =150 °C - 1.70 - VCC=600 V, IE=450 A, VGE=±15 V, - - 300 ns μC IE=450 A (Note.5) , , Reverse recovery charge RG=0 Ω, Inductive load - 24 - Turn-on switching energy per pulse VCC=600 V, IC=IE=450 A, - 54.9 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, - 48 - (Note.1) V - (Note.5) Eon Err V T j =25 °C IE=450 A VEC (Note.5) V V mJ Reverse recovery energy per pulse T j =150 °C, Inductive load - 32.4 - mJ RCC'+EE' Internal lead resistance Main terminals -chip, per switch, T C =25 °C - - 0.7 mΩ rg Internal gate resistance Per switch - 4.3 - Ω Publication Date : July 2012 2 < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE THERMAL RESISTANCE CHARACTERISTICS Symbol Item Rth(j-c)Q Thermal resistance Rth(j-c)D Rth(c-s) (Note.4) Contact thermal resistance Limits Conditions (Note.4) Min. Typ. Max. Unit Junction to case, per IGBT - - 45 K/kW Junction to case, per FWDi - - 68 K/kW - 18 - K/kW Case to heat sink, per 1/2 module, Thermal grease applied (Note.6) MECHANICAL CHARACTERISTICS Symbol Item Mt Mounting torque Ms Limits Conditions Min. Typ. Max. Unit Main terminals M 6 screw 3.5 4.0 4.5 N·m Mounting to heat sink M 6 screw 3.5 4.0 4.5 N·m - 580 - g -100 - +100 μm m Weight - ec Flatness of base plate On the centerline X, Y (Note.7) -:Concave +:Convex Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to figure of chip location. The heat sink thermal resistance should measure just under the chips. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. 6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. X 3 mm mounting side Y -:Concave mounting side mounting side +:Convex *. DC current rating is limited by power terminals. RECOMMENDED OPERATING CONDITIONS Symbol Item Conditions VCC (DC) Supply voltage Applied across C1-E2 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 RG External gate resistance Per switch Publication Date : July 2012 3 Limits Min. Typ. Max. Unit - 600 850 13.5 15.0 16.5 V V 0 - 8 Ω < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi TEST CIRCUIT C1 VGE=15 V IC G1 V C1 Shortcircuited G1 V Shortcircuited VGE=15 V Tr1 C2E1 Shortcircuited Di2 VEC test circuit Publication Date : July 2012 4 E2 Es2 E2 Di1 V C E s a t test circuit IE G2 Es2 Tr2 V Es1 C2E1 G2 E2 Es2 E2 G1 Es1 Shortcircuited IC G2 G2 Es2 V C2E1 C2E1 IE C1 Shortcircuited G1 Es1 Es1 C1 Shortcircuited < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS ～ vGE iE C1 90 % 0V G1 -V GE 0 iE t Load Es1 VCC IE iC ～ + C2E1 RG G2 vGE 0V -V GE iC 0A tf tr t d( on ) td ( o f f ) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE 0 iC iC VCC 0.1×ICM 0.1×VCC ICM VCC t 0.5×I r r 10% E2 ICM t Irr vCE Es2 trr 0A 90 % +V GE Q r r =0.5×I r r ×t r r 0 0.1×VCC IEM vEC vCE 0.02×ICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0A t 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : July 2012 5 < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V (Chip) (Chip) 3.5 900 VGE=20 V 13.5 V 800 12 V 15 V COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 700 600 11 V 500 400 10 V 300 200 T j =125 °C 3.0 9V T j =150 °C 2.5 2.0 T j =25 °C 1.5 1.0 0.5 100 0 0.0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 0 10 VCE (V) 300 400 500 600 700 800 900 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) 10 (Chip) 1000 8 T j =150 °C IE (A) IC=900 A IC=450 A 6 EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 200 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C 100 IC=180 A 4 T j =125 °C 100 T j =25 °C 2 0 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 10 20 0.0 VGE (V) 0.5 1.0 1.5 2.0 EMITTER-COLLECTOR VOLTAGE Publication Date : July 2012 6 2.5 VEC (V) 3.0 < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC=450 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 1000 10000 td(off) td(on) SWITCHING TIME SWITCHING TIME 100 tr 100 1000 td(off) tf 10 10 10 100 COLLECTOR CURRENT 1000 100 0.1 IC (A) Eon Eoff 10 100 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) (mJ) 100 1 RG (Ω) 1000 SWITCHING ENERGY Eoff SWITCHING ENERGY Eon (mJ) REVERSE RECOVERY ENERGY (mJ) Err 100 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=450 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 10 10 EXTERNAL GATE RESISTANCE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 1 10 1000 Eon 100 Eoff Err 10 1 0.1 1 10 EXTERNAL GATE RESISTANCE COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Publication Date : July 2012 7 100 RG (Ω) SWITCHING TIME td(off), tf tr td(on), tr (ns) td(on) (ns) (ns) tf < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C G-E short-circuited, T j =25 °C 10000 1000 100 Cies Irr Coes 1000 100 1 trr Cres 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 10 100 EMITTER CURRENT TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) V C C = 600 V, I C = 450 A, T j =25 °C Single pulse, TC=25°C R t h ( j - c ) Q =45 K/kW, R t h ( j - c ) D =68 K/kW Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE VGE (V) IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 15 10 5 0 0 100 VCE (V) 20 GATE-EMITTER VOLTAGE 100 1000 10 0.1 500 GATE CHARGE 1000 1500 QG (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME (S) Publication Date : July 2012 8 0.1 1 10 t r r (ns) I r r (A) CAPACITANCE (nF) 10 < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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