MITSUBISHI CM450DY-24S

< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I C .............….......................…
4 1 0 A*
Collector-emitter voltage V CES ......................… 1 2 0 0 V
Maximum junction temperature T j m a x ..............
1 7 5 °C
●Flat base Type
●Copper base plate
●RoHS Directive compliance
●UL Recognized under UL1557, File E323585
Dual (Half-Bridge)
*. DC current rating is limited by power terminals.
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
3
Tolerance
0.5
to
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
Di1
C2E1
Tr2
E2
Di2
Publication Date : July 2012
1
Tr1
C1
G1 E1
(ES1)
Division of Dimension
E2 G2
(ES2)
Tolerance otherwise specified
< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Rating
Unit
VCES
Symbol
Collector-emitter voltage
G-E short-circuited
1200
V
VGES
Gate-emitter voltage
C-E short-circuited
±20
V
IC
Item
Ptot
IE
IERM
(Note.1)
Emitter current
410 *
(Note.3)
Pulse, Repetitive
Total power dissipation
(Note.1)
(Note.2, 4)
DC, TC=125 °C
Collector current
ICRM
Conditions
TC=25 °C
(Note.2, 4)
3330
TC=25 °C
(Note.2, 4)
410 *
Pulse, Repetitive
A
900
(Note.3)
W
A
900
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
Tjmax
Maximum junction temperature
-
175
V
Tcmax
Maximum case temperature
(Note.4)
125
Tjopr
Operating junction temperature
-
-40 ~ +150
Tstg
Storage temperature
-
-40 ~ +125
°C
°C
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1.0
mA
IGES
Gate-emitter leakage current
VGE=VGES, C-E short-circuited
-
-
0.5
μA
VGE(th)
Gate-emitter threshold voltage
IC=45 mA, VCE=10 V
5.4
6.0
6.6
V
IC=450 A
VCEsat
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
T j =25 °C
-
1.80
2.25
VGE=15 V, Terminal,
T j =125 °C
-
2.05
-
Refer to figure of test circuit
T j =150 °C
-
2.10
-
IC=450 A
(Note.1)
Emitter-collector voltage
trr
(Note.1)
Reverse recovery time
Qrr
(Note.1)
(Note.5)
,
T j =25 °C
-
1.70
2.15
VGE=15 V,
T j =125 °C
-
1.90
-
Chip
T j =150 °C
-
1.95
-
-
-
45
,
VCE=10 V, G-E short-circuited
VCC=600 V, IC=450 A, VGE=15 V
VCC=600 V, IC=450 A, VGE=±15 V,
RG=0 Ω, Inductive load
-
-
9.0
-
-
0.75
-
1050
-
-
-
800
-
-
200
-
-
600
nF
nC
ns
-
-
300
1.85
2.30
G-E short-circuited, Terminal,
T j =125 °C
-
1.85
-
Refer to figure of test circuit
T j =150 °C
-
1.85
-
T j =25 °C
-
1.70
2.15
G-E short-circuited,
T j =125 °C
-
1.70
-
Chip
T j =150 °C
-
1.70
-
VCC=600 V, IE=450 A, VGE=±15 V,
-
-
300
ns
μC
IE=450 A
(Note.5)
,
,
Reverse recovery charge
RG=0 Ω, Inductive load
-
24
-
Turn-on switching energy per pulse
VCC=600 V, IC=IE=450 A,
-
54.9
-
Eoff
Turn-off switching energy per pulse
VGE=±15 V, RG=0 Ω,
-
48
-
(Note.1)
V
-
(Note.5)
Eon
Err
V
T j =25 °C
IE=450 A
VEC
(Note.5)
V
V
mJ
Reverse recovery energy per pulse
T j =150 °C, Inductive load
-
32.4
-
mJ
RCC'+EE'
Internal lead resistance
Main terminals -chip, per switch, T C =25 °C
-
-
0.7
mΩ
rg
Internal gate resistance
Per switch
-
4.3
-
Ω
Publication Date : July 2012
2
< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Thermal resistance
Rth(j-c)D
Rth(c-s)
(Note.4)
Contact thermal resistance
Limits
Conditions
(Note.4)
Min.
Typ.
Max.
Unit
Junction to case, per IGBT
-
-
45
K/kW
Junction to case, per FWDi
-
-
68
K/kW
-
18
-
K/kW
Case to heat sink, per 1/2 module,
Thermal grease applied
(Note.6)
MECHANICAL CHARACTERISTICS
Symbol
Item
Mt
Mounting torque
Ms
Limits
Conditions
Min.
Typ.
Max.
Unit
Main terminals
M 6 screw
3.5
4.0
4.5
N·m
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
N·m
-
580
-
g
-100
-
+100
μm
m
Weight
-
ec
Flatness of base plate
On the centerline X, Y
(Note.7)
-:Concave
+:Convex
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
2. Junction temperature (T j ) should not increase beyond T j m a x rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to figure of chip location.
The heat sink thermal resistance should measure just under the chips.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
X
3 mm
mounting
side
Y
-:Concave
mounting
side
mounting side
+:Convex
*. DC current rating is limited by power terminals.
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Conditions
VCC
(DC) Supply voltage
Applied across C1-E2
VGEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2
RG
External gate resistance
Per switch
Publication Date : July 2012
3
Limits
Min.
Typ.
Max.
Unit
-
600
850
13.5
15.0
16.5
V
V
0
-
8
Ω
< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: FWDi
TEST CIRCUIT
C1
VGE=15 V
IC
G1
V
C1
Shortcircuited
G1
V
Shortcircuited
VGE=15 V
Tr1
C2E1
Shortcircuited
Di2
VEC test circuit
Publication Date : July 2012
4
E2
Es2
E2
Di1
V C E s a t test circuit
IE
G2
Es2
Tr2
V
Es1
C2E1
G2
E2
Es2
E2
G1
Es1
Shortcircuited
IC
G2
G2
Es2
V
C2E1
C2E1
IE
C1
Shortcircuited
G1
Es1
Es1
C1
Shortcircuited
< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
~
vGE
iE
C1
90 %
0V
G1
-V GE
0
iE
t
Load
Es1
VCC
IE
iC
~
+
C2E1
RG
G2
vGE
0V
-V GE
iC
0A
tf
tr
t d( on )
td ( o f f )
t
Switching characteristics test circuit and waveforms
t r r , Q r r test waveform
iE
vCE
0
iC
iC
VCC
0.1×ICM
0.1×VCC
ICM
VCC
t
0.5×I r r
10%
E2
ICM
t
Irr
vCE
Es2
trr
0A
90 %
+V GE
Q r r =0.5×I r r ×t r r
0
0.1×VCC
IEM
vEC
vCE
0.02×ICM
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
VCC
0A
t
0V
t
ti
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : July 2012
5
< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
VGE=15 V
(Chip)
(Chip)
3.5
900
VGE=20 V
13.5 V
800
12 V
15 V
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
COLLECTOR CURRENT
IC (A)
700
600
11 V
500
400
10 V
300
200
T j =125 °C
3.0
9V
T j =150 °C
2.5
2.0
T j =25 °C
1.5
1.0
0.5
100
0
0.0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
0
10
VCE (V)
300
400
500
600
700
800
900
IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
(Chip)
10
(Chip)
1000
8
T j =150 °C
IE (A)
IC=900 A
IC=450 A
6
EMITTER CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
200
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
100
IC=180 A
4
T j =125 °C
100
T j =25 °C
2
0
6
8
10
12
14
GATE-EMITTER VOLTAGE
16
18
10
20
0.0
VGE (V)
0.5
1.0
1.5
2.0
EMITTER-COLLECTOR VOLTAGE
Publication Date : July 2012
6
2.5
VEC (V)
3.0
< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=450 A, VGE=±15 V, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
1000
10000
td(off)
td(on)
SWITCHING TIME
SWITCHING TIME
100
tr
100
1000
td(off)
tf
10
10
10
100
COLLECTOR CURRENT
1000
100
0.1
IC (A)
Eon
Eoff
10
100
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
(mJ)
100
1
RG (Ω)
1000
SWITCHING ENERGY Eoff
SWITCHING ENERGY Eon (mJ)
REVERSE RECOVERY ENERGY (mJ)
Err
100
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC/IE=450 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
10
10
EXTERNAL GATE RESISTANCE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
100
1
10
1000
Eon
100
Eoff
Err
10
1
0.1
1
10
EXTERNAL GATE RESISTANCE
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Publication Date : July 2012
7
100
RG (Ω)
SWITCHING TIME
td(off), tf
tr
td(on), tr
(ns)
td(on)
(ns)
(ns)
tf
< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
G-E short-circuited, T j =25 °C
10000
1000
100
Cies
Irr
Coes
1000
100
1
trr
Cres
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
10
100
EMITTER CURRENT
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
V C C = 600 V, I C = 450 A, T j =25 °C
Single pulse, TC=25°C
R t h ( j - c ) Q =45 K/kW, R t h ( j - c ) D =68 K/kW
Zth(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
VGE (V)
IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
15
10
5
0
0
100
VCE (V)
20
GATE-EMITTER VOLTAGE
100
1000
10
0.1
500
GATE CHARGE
1000
1500
QG (nC)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
TIME (S)
Publication Date : July 2012
8
0.1
1
10
t r r (ns)
I r r (A)
CAPACITANCE (nF)
10
< IGBT MODULES >
CM450DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
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Publication Date : July 2012
9