QID1215003 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 150 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft switching applications. Each module consists of two IGBT Transistors with each transistor having a reverseconnected super-fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 10 11 12 E1 C1 X B M N E G DETAIL "B" G2 S2 G1 S1 20 19 18 17 L 16 15 14 13 T S R W DETAIL "A" V H K C T DETAIL "A" C1 (10 - 12) C2 (4 - 6) G1 (15 - 16) G2 (19 - 20) E1 (13 - 14) E2 (17 - 18) E1 (7 - 9) E2 (1 - 3) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.32 109.8 Q 0.449 11.40 B 2.21 56.1 R 0.885 22.49 C 0.71 18.0 S 1.047 26.6 D 3.70±0.02 94.0±0.5 T 0.15 3.80 E 2.026 51.46 U 0.16 4.0 F 3.17 80.5 V 0.30 7.5 G 1.96 49.8 W 0.045 1.15 H 1.00 25.5 X 0.03 0.8 K 0.87 22.0 Y 0.16 4.0 L 0.266 6.75 Z 0.47 12.1 M 0.26 6.5 AA N 0.59 15.0 P 0.586 14.89 0.17 Dia. 4.3 Dia. AB 0.10 Dia. 2.5 Dia. AC 0.08 Dia. 2.1 Dia. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/18/14 Rev. 1 Features: £ Low ESW(off) £ Aluminum Nitride Isolation £ Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode £ Low Internal Inductance £ 2 Individual Switches per Module £ Isolated Baseplate for Easy Heat Sinking £ Copper Baseplate £ RoHS Compliant Applications: £ Energy Saving Power Systems such as: Fans; Pumps; Consumer Appliances £ High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics £ High Temperature Power Systems such as: Power Electronics in Electric Vehicle and Aviation Systems 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1215005 Split Dual Si/SiC Hybrid IGBT Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings SymbolQID1215003 Units Junction Temperature Storage Temperature Tj –40 to 150 °C Tstg –40 to 150 °C Collector-Emitter Voltage (G-E Short) VCES1200 Volts Gate-Emitter Voltage (C-E Short) VGES±20 Volts Collector Current (TC = 25°C) IC 150*Amperes ICM 300*Amperes IE 150*Amperes Repetitive Peak Emitter Current (TC = 25°C)** IEM 300*Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 960Watts Mounting Torque, M6 Mounting — Weight — 270Grams Peak Collector Current Emitter Current** (TC = 25°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol in-lb VISO2500 Volts IGBT Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics 40 Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 150A, VGE = 15V, Tj = 125°C — 5.0 — Volts QG VCC = 600V, IC = 150A, VGE = 15V — 680 — nC — — 24 nf — — 2.0 nf Total Gate Charge Input Capacitance Cies Output Capacitance Coes VCE = 10V, VGE = 0V Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 150A, Load Rise Time Switch Turn-off Delay Time Time TimeFall Time — — 0.45 nf — — TBD ns tr VGE1 = VGE2 = 15V, — — TBD ns td(off) RG = 2.1Ω, — — TBD ns tf Inductive Load Switching Operation — — TBD ns * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi). Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/18/14 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1215005 Split Dual Si/SiC Hybrid IGBT Module 150 Amperes/1200 Volts Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Diode Forward Voltage VFM Diode Reverse Current IR Diode Capacitive Charge QC Test Conditions Min. Typ. Max. Units IF = 150A, VGE = -5V — 1.45 1.75 Volts IF = 150A, VGE = -5V, Tj = 175°C — 1.95 2.35 Volts VR = 1200V — 1.8 10 mA VR = 1200, Tj = 175°C — 12 66.6 mA VR = 1200V, IF = 150A, di/dt = 2200A/μs — 600 — nC Test Conditions Min. Typ. Max. Units Per IGBT 1/2 Module, — — 0.13 °C/W — — 0.25 °C/W Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c)Q TC Reference Point Under Chips Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference TC Reference Point Under Chips Contact Thermal Resistance Rth(c-f) External Gate Resistance RG Internal Inductance Lint Per 1/2 Module, Thermal Grease Applied IGBT Part — °C/W 3.1— — 0.04 31 Ω — — nH 10 Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/18/14 Rev. 1 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1215005 Split Dual Si/SiC Hybrid IGBT Module 150 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 15 250 13 12 200 150 11 100 10 50 9 0 8 0 2 4 6 8 250 200 150 100 50 0 10 VGE = 10V Tj = 25C Tj = 125C 5 0 10 15 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 9 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 300 14 COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 10 VGE = 15V Tj = 25C Tj = 125C 8 7 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 300 TRANSFER CHARACTERISTICS (TYPICAL) 6 5 4 3 2 1 0 0 50 100 150 200 250 COLLECTOR-CURRENT, IC, (AMPERES) 300 Tj = 25C IC = 300A 8 6 IC = 150A 4 IC = 60A 2 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/18/14 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1215005 Split Dual Si/SiC Hybrid IGBT Module 150 Amperes/1200 Volts FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 125 CAPACITANCE, Cies, Coes, Cres, (nF) FORWARD CURRENT, IF, (μA) 150 100 75 50 Tj = 25°C Tj = 125°C Tj = 150°C Tj = 175°C 25 0 0 0.5 1.0 1.5 2.0 2.5 Coes 100 Cres 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 20 TBD VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load 102 COLLECTOR CURRENT, IC, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING TIME, (ns) 101 FORWARD VOLTAGE, VF, (VOLTS) 101 100 101 Cies 10-1 10-1 3.0 103 102 VGE = 0V IC = 150A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE, QG, (nC) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/18/14 Rev. 1 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID1215005 Split Dual Si/SiC Hybrid IGBT Module 150 Amperes/1200 Volts SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 TBD VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 10-1 101 102 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 101 VCC = 600V VGE = ±15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 100 TBD 101 102 COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 102 TBD 101 100 101 VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus 102 EMITTER CURRENT, IE, (AMPERES) 103 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 VCC = 600V VGE = ±15V IE = 100A Tj = 125°C Inductive Load C Snubber at Bus 101 100 100 TBD 101 102 GATE RESISTANCE, RG, (Ω) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 11/18/14 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) QID1215005 Split Dual Si/SiC Hybrid IGBT Module 150 Amperes/1200 Volts 100 10-3 10-1 10-2 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.13°C/W (IGBT) Rth(j-c) = 0.25°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/18/14 Rev. 1 7