ROHM SH8M70

10V Drive Nch+Pch MOSFET
SH8M70
Dimensions (Unit : mm)
Structure
Silicon N-channel / P-channel MOSFET
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Each lead has same dimensions
Packaging specifications
Package
(8)
Taping
(7)
(6)
(5)
(8) (7) (6) (5)
TB
Code
Type
Inner circuit
Basic ordering unit (pieces)
2500
SH8M70
∗2
∗2
(1) (2) (3) (4)
∗1
(1)
∗1
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
N-ch
P-ch
250
−250
30
−20
±3.0
±2.5
±12
±10
1.0
−1.0
12
−10
2.0(TOTAL) 1.4(ELEMENT)
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/7
2010.06 - Rev.B
SH8M70
Data Sheet
N-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
IGSS
−
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS 250
IDSS
Zero gate voltage drain current
−
2.0
Gate threshold voltage
VGS (th)
∗
Static drain-source on-state
−
RDS (on)
resistance
∗
Forward transfer admittance
0.75
Yfs
Input capacitance
−
Ciss
Output capacitance
Coss
−
−
Crss
Reverse transfer capacitance
td (on) ∗
−
Turn-on delay time
tr ∗
−
Rise time
td (off) ∗
−
Turn-off delay time
tf ∗
−
Fall time
−
Qg ∗
Total gate charge
Qgs ∗
−
Gate-source charge
−
Qgd ∗
Gate-drain charge
Typ.
Max.
−
−
−
−
±10
−
25
4.0
Unit
μA
V
μA
V
VGS=±25V, VDS=0V
ID=1mA, VGS=0V
VDS=250V, VGS=0V
VDS=10V, ID=1mA
Conditions
1.25
1.63
Ω
ID=1.5A, VGS=10V
−
180
70
20
10
20
20
25
5.2
2.1
1.2
−
−
−
−
−
−
−
−
−
−
−
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ID=1.5A, VDS=10V
VDS=25V
VGS=0V
f=1MHz
ID=1.5A, VDD 125V
VGS=10V
RL=83Ω
RG =10Ω
VDD 125V
VGS=10V ID=3A
RL=42Ω RG =10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD
∗
Min.
−
Typ.
−
Max.
1.5
Unit
V
Conditions
IS=3A, VGS=0V
∗Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
○
2/7
2010.06 - Rev.B
SH8M70
Data Sheet
P-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
IGSS
−
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −250
−
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th) −2.0
Static drain-source on-state
∗
−
RDS (on)
resistance
∗
1.0
Forward transfer admittance
Yfs
−
Input capacitance
Ciss
Output capacitance
−
Coss
Reverse transfer capacitance
−
Crss
Turn-on delay time
−
td (on) ∗
Rise time
−
tr ∗
Turn-off delay time
−
td (off) ∗
Fall time
−
tf ∗
Total gate charge
−
Qg ∗
Gate-source charge
−
Qgs ∗
Gate-drain charge
−
Qgd ∗
Typ.
Max.
−
−
−
−
±10
−
−25
−4.0
Unit
μA
V
μA
V
Conditions
VGS=±15V, VDS=0V
ID= −1mA, VGS=0V
VDS= −250V, VGS=0V
VDS= −10V, ID= −1mA
2.2
2.8
Ω
ID= −1.25A, VGS= −10V
−
250
40
10
9
15
30
20
8
2.5
2.8
−
−
−
−
−
−
−
−
−
−
−
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ID= −1.25A, VDS= −10V
VDS= −25V
VGS=0V
f=1MHz
ID= −1.25A, VDD −125V
VGS= −10V
RL=100Ω
RG =10Ω
VDD −125V, ID= −2.5A
VGS= −10V
RL=50Ω, RG =10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD
∗
Min.
−
Typ.
−
Max.
−1.5
Unit
V
Conditions
IS=−2.5A, VGS=0V
∗Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
○
3/7
2010.06 - Rev.B
SH8M70
Data Sheet
N-ch
Electrical characteristic curves
10000
100
Coss
10
f=1MHz
VGS=0V
Ta=25°C
1 Pulsed
0.01
0.1
1000
1000
tf
td(off)
100
td(on)
10
tr
Crss
100
1
0.01
1000
0.1
10
Drain Current : ID(A)
Gate Source Voltage : VGS(V)
10
5
2
3
4
Ta=25°C
VDD=125V
ID=3A
Pulsed
5
6
7
0.01
0.1
Ta=-25°C
25°C
75°C
125°C
0
0.2
0.4
0.6
0.8
1
1.2
Source-Drain Voltage : VSD(V)
Fig.7 Source Current vs.
Source-Drain Voltage
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c 2010 ROHM Co., Ltd. All rights reserved.
○
Fig.3 Reverse Recovery Time vs.
Reverse Drain Current
Ta=-25°C
25°C
75°C
125°C
0
2
4
6
8
10
Ta=25°C
Pulsed
9
8
7
6
5
4
3
1.5A
2
Fig.5 Typical Transfer
Characteristics
10
0
0
1
Ta=125°C
75°C
25°C
-25°C
1
10
Drain Current : ID(A)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current
4/7
5
10
15
20
Gate-Source Voltage : VGS(V)
Fig.6 Static Drain-Source On-State
Resistance vs.Gate-Source Voltage
VGS=10V
Pulsed
0.1
0.1
ID=3A
1
Gate-Source Voltage : VGS (V)
Static Drain-Source On-State Resistance :
Source Current : IS(A)
1
1
Ta=25°C
di/dt=100A/μs
VGS=0V
Pulsed
10
Reverse Drain Current : IDR(A)
VDS=10V
Pulsed
0.1
Fig.4 Dynamic Input Characteristics
VGS=0V
Pulsed
1
0.1
10
1
Total Gate Charge : Qg(nC)
10
10
Fig.2 Switching Characteristics
15
1
100
Drain Current : ID(A)
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
0
1
Static Drain-Source On-State Resistance
10
Static Drain-Source On-State Resistance
1
Drain-Source Voltage : VDS(V)
0
Ta=25°C
VDD=125V
VGS=10V
RG=10Ω
Pulsed
Reverse Recovery Time : trr
(ns)
Ciss
Switching Time : t(ns)
Typical Capacitance : C (pF)
1000
3
VGS=10V
Pulsed
2.5
ID=3.0A
2
1.5A
1.5
1
0.5
0
-50 -25
0
25
50
75 100 125 150
Temperature : Tch (°C)
Fig.9 Static Drain-Source On-State
Resistance vs. Channel Temperature
2010.06 - Rev.B
SH8M70
5
1
Ta=-25°C
25°C
75°C
75°C
0.1
0.01
0.01
0.1
1
2
VDS=10V
ID=1mA
VGS=10V
9V
8V
1.6
7V
1.8
4
Drain Current : ID (A)
VDS=10V
Pulsed
Gate Threshold Voltage : VGS(th)(V)
Forward Transfer Admittance
: |Yfs| (S)
10
Data Sheet
3
2
6V
1.4
1.2
5V
1
0.8
0.6
0.4
1
4V
0.2
0
-50 -25
10
Drain Current : ID(A)
0
25
50
3V
0
75 100 125 150
0
2
6
8
10
Drain-Sourse Voltage : VDS (V)
Channel Temperature : Tch (°C)
Fig.10 Forward Transfer Admittance
vs. Drain Current
4
Fig.12 Typical Output Characteristics
Fig.11 Gate Threshold Voltage
vs. Channel Temperature
P-ch
Electrical characteristic curves
Ta=25°C
VDD= −125V
VGS= −10V
RG=10Ω
Pulsed
Switching Time : t(ns)
100
Coss
10
Crss
f=1MHz
VGS=0V
Ta=25°C
Pulsed
1
0.01
0.1
1
10
100
1000
tf
100
td(off)
td(on)
10
tr
1
0.01
1000
0.1
Drain-Source Voltage : -VDS(V)
Static Drain - Source On - State
Resistance
Drain Current : -ID (A)
1
0.01
Ta=-25°C
25°C
75°C
125°C
0
2
4
6
Ta=25°C
VDD=−125V
ID=−2.5A
Pulsed
0
1
2
3
4
5
6
7
8
9
10
8
Gate-Source Voltage : −VGS(V)
Fig.4 Typical Transfer Characteristics
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c 2010 ROHM Co., Ltd. All rights reserved.
○
Total Gate Charge : Qg(nC)
Fig.3 Dynamic Input Characteristics
10
10
VDS=-10V
Pulsed
0.1
5
0
10
Fig.2 Switching Characteristics
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
10
1
10
Drain Current : -ID (A)
9
8
Source Current : -IS(A)
Typical Capacitance : C (pF)
Ciss
15
Gate Source Voltage : −VGS(V)
10000
1000
7
6
5
4
3
ID=-2.5A
2
1
Ta=-25°C
25°C
75°C
125°C
-1.25A
1 Ta=25°C
Pulsed
0
0
5
0.1
10
15
20
Gate-Source Voltage : -VGS(V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
5/7
VGS=0V
Pulsed
0
0.2
0.4
0.6
0.8
1
1.2
Source-Drain Voltage : -VSD(V)
Fig.6 Source Current vs.
Source-Drain Voltage
2010.06 - Rev.B
Data Sheet
Ta=125°C
75°C
25°C
-25°C
VGS=10V
Pulsed
0.1
0.1
1
10
1
Ta=-25°C
25°C
75°C
125°C
0.1
0.01
0.01
0.1
1000
5
Static Drain-Source On-State
Resistance : RDS(on)(Ω)
Reverse Recovery Time : trr (ns)
2
1
10
100
10
10
Reverse Drain Current : -IDR (A)
Fig.10 Reverse Recovery Time vs.
Reverse Drain Current
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c 2010 ROHM Co., Ltd. All rights reserved.
○
VDS=10V
ID=1mA
0
25
-7V
1.8
4
ID=2.5A
1.25A
2
1
-6V
VGS=-10V
-9V
-8V
1.6
3
75 100 125 150
Fig.9 Gate Threshold Voltage
vs. Channel Temperature
(X-1)
2
VGS=10V
Pulsed
50
Channel Temperature : Tch: (°C)
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current
1
3
Drain Current : -ID(A)
Drain Current : -ID(A)
1
0.1
1
4
0
-50 -25
Drain Current : -ID(A)
1
5
VDS=10V
Pulsed
Gate Threshold Voltage : -VGS(th)(V)
10
10
Forward Transfer Admittance
: |Yfs| (S)
Static Drain-Source On-State Resistance :
SH8M70
1.4
TC=25°C
Single Pulsed
1.2
1
-5V
0.8
0.6
0.4
0
-50 -25
0.2
0
25
50
75 100 125 150
Temperature : Tch (°C)
Fig.11 Static Drain-Source On-State
Resistance vs.Channel Temperature
6/7
0
-4V
0
2
4
6
8
10
Drain-Sourse Voltage : -VDS(V)(X-1)
Fig.12 Typical Output Characteristics
2010.06 - Rev.B
SH8M70
Data Sheet
N-ch
Measurement circuit
VGS
ID
Pulse Width
VDS
RL
D.U.T.
90%
50%
10%
VGS
VDS
50%
10%
RG
10%
VDD
90%
td(on)
90%
td(off)
tr
tr
ton
Fig.13 Switching Time Measurement Circuit
VGS
ID
toff
Fig.14 Switching Waveforms
VG
VDS
RL
Qg
IG (Const.)
D.U.T.
VGS
RG
VDD
Qgs
Qgd
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveform
P-ch
 Measurement circuit
VGS
ID
Pulse Width
VDS
VGS
10%
50%
RL
50%
90%
D.U.T.
RG
10%
VDD
VDS
10%
90%
td(on)
90%
td(off)
tr
ton
tr
toff
Fig.17 Switching Time Measurement Circuit
Fig.18 Switching Waveforms
VGS
ID
VDS
VG
RL
Qg
IG (Const.)
D.U.T.
VGS
RG
VDD
Qgs
Qgd
Charge
Fig.19 Gate Charge Measurement Circuit
Fig.20 Gate Charge Waveform
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c 2010 ROHM Co., Ltd. All rights reserved.
○
7/7
2010.06 - Rev.B
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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Please be sure to implement in your equipment using the Products safety measures to guard
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R1010A