10V Drive Nch MOSFET R5007ANJ zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 4.5 2.54 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 (3) (2) Collector (Drain) (3) Emitter (Source) zApplications Switching Each lead has same dimensions zInner circuit ∗1 zPackaging specifications Package Taping TL Code Type (1) 1000 Basic ordering unit (pieces) (1) Gate (2) Drain (3) Source R5007ANJ (2) (3) ∗1 Body Diode zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V Parameter Drain current Continuous ID Pulsed IDP Continuous IS Pulsed ISP ∗3 ±7 A ∗1 ±28 A ∗3 7 A ∗1 28 A IAS ∗2 3.5 A Avalanche Energy EAS ∗2 3.5 mJ Total power dissipation (Tc=25°C) PD 40 W Source current (Body Diode) Avalanche Current Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 3.13 °C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.02 - Rev.A Data Sheet R5007ANJ zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 500 − − V ID=1mA, VGS=0V IDSS − − 100 µA VDS=500V, VGS=0V Gate threshold voltage VGS(th) 2.5 − 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) ∗ − 0.8 1.05 Ω ID=3.5A, VGS=10V Forward transfer admittance | Yfs | Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current ∗ 2.5 − − S ID=3.5A, VDS=10V Input capacitance Ciss − 500 − pF VDS=25V Output capacitance Coss − 300 − pF VGS=0V Reverse transfer capacitance Crss − 23 − pF f=1MHz ∗ − 20 − ns ID=3.5A, VDD 250V ∗ − 22 − ns VGS=10V ∗ − 50 − ns RL=71.4Ω ∗ − 25 − ns RG=10Ω ∗ − 13 − nC ∗ − 3.5 − nC ∗ − 5.5 − nC VDD 250V ID=7A VGS=10V RL=35.7Ω / RG=10Ω Turn-on delay time td(on) tr Rise time Turn-off delay time td(off) tf Fall time Qg Total gate charge Gate-source charge Qgs Gate-drain charge Qgd ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 7A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.02 - Rev.A Data Sheet R5007ANJ zElectrical characteristic curves Operation in this area is limited by RDS(ON) 10 PW =100us PW =1ms 1 DC operation 0.1 Ta = 25°C Single Pulse 0.01 6.0V 6.5V 6 5 5.5V 4 5.0V 2 10 100 1000 20 30 40 1.5 3.0 4.5 6.0 6 VDS= 10V ID= 1mA 5 4 3 2 1 0 -50 GATE-SOURCE VOLTAGE : VGS (V) 2.5 2 1.5 ID= 7.0A 1 ID= 3.5A 0.5 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5.5V 6.0V 2 5.0V 1 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.3 Typical Output Characteristics(Ⅱ) 10 VGS= 10V Pulsed 1 Ta= Ta= Ta= Ta= 125°C 75°C 25°C -25°C 0.1 0 50 100 150 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.5 Gate Threshold Voltage vs. Channel Temperature STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25°C Pulsed 6.5V CHANNEL TEMPERATURE: Tch (°C) Fig.4 Typical Transfer Characteristics 3 7.0V 3 50 Fig.2 Typical Output Characteristics(Ⅰ) 0.01 0 10 Fig.1 Maximum Safe Operating Area 0.1 0.001 0.0 0 DRAIN-SOURCE VOLTAGE : VDS ( V ) Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 10V 8.0V VGS= 4.5V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 10 4 0 DRAIN-SOURCE VOLTAGE: VDS (V) VDS= 10V Pulsed Ta= 25°C Pulsed VGS= 4.5V Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 3 VGS= 10V Pulsed 2.5 2 ID= 7A 1.5 1 ID= 3.5A 0.5 0 -50 0 50 100 150 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 1 GATE THRESHOLD VOLTAGE: VGS(th) (V) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 8.0V Ta= 25°C Pulsed 0 0.1 DRAIN CURRENT : ID (A) 7.0V 8 10V DRAIN CURRENT: ID (A) 10 DRAIN CURRENT: ID (A) DRAIN CURRENT : ID (A) 100 VDS= 10V Pulsed 10 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 0.01 0.01 0.1 1 10 100 CHANNEL TEMPERATURE: Tch (°C) DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.9 Forward Transfer Admittance vs. Drain Current 3/5 2009.02 - Rev.A Data Sheet 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 Ciss 1000 Crss 100 Coss 10 Ta= 25°C f= 1MHz VGS= 0V 1 0.5 1 1.5 1 10 100 1000 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Fig.11 Typical Capacitance vs. Drain-Source Voltage 10000 1000 100 Ta= 25°C di / dt= 100A / µs VGS= 0V Pulsed 10 5 0 5 10 15 20 25 TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics Ta= 25°C VDD= 250V VGS= 10V RG= 10Ω Pulsed tf 1000 100 Ta= 25°C VDD= 250V ID= 7A RG= 10Ω Pulsed 0 0.1 SWITCHING TIME : t (ns) REVERSE RECOVERY TIME: trr (ns) GATE-SOURCE VOLTAGE : VGS (V) VGS= 0V Pulsed 0 td(off) 10 td(on) tr 1 10 0.1 1 10 0.01 100 REVERSE DRAIN CURRENT : IDR (A) 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics Fig.13 Reverse Recovery Time vs.Reverse Drain Current NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 15 10000 100 CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) R5007ANJ 10 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） Rth（ch-a） = 54.3°C/W 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/5 2009.02 - Rev.A Data Sheet R5007ANJ zSwitching characteristics measurement circuit Fig.1 Switching time measurement circuit Fig.2 Switching waveforms IG(Const.) Fig.3 Gate charge measurement circuit Fig.5 Fig.4 Gate charge waveform Avalanche measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.6 5/5 Avalanche waveform 2009.02 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 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The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.0