10V Drive Nch MOSFET R6025ANZ zDimensions (Unit : mm) 5.5 TO-3PF 15.5 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 0.44 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 14.8 0.75 zApplications Switching 0.9 (1)Gate 5.45 (2)Drain (3)Souce zPackaging specifications (1) 5.45 (2) (3) zInner circuit Tube Package Type 3.0 φ3.6 10.0 zStructure Silicon N-channel MOSFET Basic ordering unit (pieces) 360 R6025ANZ ∗1 (1) ∗1 Body Diode zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VDSS 600 V Drain-source voltage Gate-source voltage Drain current Pulsed Source current (Body Diode) ±30 V ∗3 ±25 A ∗1 ±100 A 25 A ∗1 100 A 12.5 A 39.0 mJ VGSS Continuous ID IDP ∗3 Continuous IS Pulsed ISP Avalanche current IAS ∗2 Avalanche energy EAS ∗2 Total power dissipation (Tc=25°C) PD 150 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C (2) (3) (1) Gate (2) Drain (3) Source ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed. zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 0.83 °C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.08 - Rev.B R6025ANZ Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit IGSS − − ±100 nA V(BR)DSS 600 − − V ID=1mA, VGS=0V IDSS − − 100 µA VDS=600V, VGS=0V Gate threshold voltage VGS(th) 2.5 − 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) ∗ − 0.12 0.15 Ω ID=12.5A, VGS=10V 14 Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current ∗ Conditions VGS=±30V, VDS=0V 20 − S VDS=10V, ID=12.5A Input capacitance Ciss − 3250 − pF VDS=25V Output capacitance Coss − 2400 − pF VGS=0V Forward transfer admittance | Yfs | − 85 − pF f=1MHz ∗ − 50 − ns VDD 300V, ID=12.5A ∗ − 135 − ns VGS=10V td(off) ∗ − 185 − ns RL=24Ω tf ∗ − 110 − ns RG=10Ω Qg ∗ − 88 − nC ∗ − 25 − nC ∗ − 30 − nC VDD 300V ID=25A VGS=10V RL=12Ω / RG=10Ω Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time Turn-off delay time tr Fall time Total gate charge Gate-source charge Qgs Gate-drain charge Qgd ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 12.5A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.08 - Rev.B R6025ANZ Data Sheet zElectrical characteristic curves 40 PW = 1ms 1 PW = 10ms 0.1 Tc = 25°C Single Pulse 0.01 0.1 1 30 6.0V 5.5V 20 15 5.0V 10 5 DC operation 100 0 1000 10 6 GATE THRESHOLD VOLTAGE: VGS(th) (V) DRAIN CURRENT : ID (A) Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 0.001 2 4 5 40 0 50 0 1 1 0 50 100 0.3 ID = 25A ID = 12.5A 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on ) (Ω) 0.2 1 0 15 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0 50 100 CHANNEL TEMPERATURE: Tch (°C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 3/5 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ID = 12.5A 0 -50 10 DRAIN CURRENT : ID (A) ID = 25A 0.1 5 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.01 0.1 150 VGS= 10V Pulsed 0.2 4 0.1 Fig.5 Gate Threshold Voltage vs. Channel Temperature Ta=25°C Pulsed 3 VGS= 10V Pulsed CHANNEL TEMPERATURE: Tc h (°C) 0.3 2 Fig.3: Typical output characteristics(Ⅱ) VDS= 10V ID = 1mA 0 -50 1 DRAIN-SOURCE VOLTAGE: VDS (V) 2 6 10 30 3 Fig.4 Typical Transfer Characteristics 5 20 4 GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 5.0V 5 Fig.2: Typical output characteristics(Ⅰ) Ta= 125°C 0 6.0V DRAIN-SOURCE VOLTAGE: VDS (V) 10 5.5V 10 VGS= 4.5V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 10 VDS= 10V Pulsed 0 7.0V 6.5V VGS= 4.5V Fig.1 Maximum Safe Operating Aera 1 Ta= 25°C Pulsed 10V 8.0V 15 0 DRAIN-SOURCE VOLTAGE : VDS ( V ) 100 6.5V 7.0V 25 DRAIN CURRENT: ID (A) 10 Ta= 25°C Pulsed 8.0V 35 PW = 100us 150 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 100 20 10V Operation in this area is limited by RDS(ON) DRAIN CURRENT: ID (A) DRAIN CURRENT : ID (A) 1000 100 VDS= 10V Pulsed 10 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 0.01 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current 2009.08 - Rev.B R6025ANZ Data Sheet 15 Ciss 10000 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 1000 Coss 100 10 1 0.01 0 0.5 1 C rss Ta= 25°C f= 1MHz VGS= 0V 0.01 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 0.1 1 10 100 1000 5 0 0 20 40 60 80 100 120 Fig.12 Dynamic Input Characteristics Fig.11 Typical Capacitance vs. Drain-Source Voltage 1000 Ta= 25°C VDD = 300V ID = 25A R G= 10Ω 10 Pulsed TOTAL GATE CHARGE : Qg (nC) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 100000 10000 SWITCHING TIME : t (ns) REVERSE RECOVERY TIME: trr (ns) GATE-SOURCE VOLTAGE : VGS (V) 100000 VGS= 0V Pulsed CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 100 100 Ta= 25°C di / dt= 100A / µs VGS= 0V Pulsed 1 10 REVERSE DRAIN CURRENT : IDR (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 100 10 tr td(on) tf 1 10 0.1 td(off) 1000 Ta= 25°C VDD = 300V VGS= 10V RG= 10Ω Pulsed 100 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics 4/5 2009.08 - Rev.B R6025ANZ Data Sheet zSwitching characteristics measurement circuit VGS Pulse Width ID VDS RL VDS D.U.T. 50% 10% VDD RG 90% 50% 10% VGS 10% 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tr toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg VGS RL D.U.T. IG (Const.) Qgs Qgd VDD RG Charge Fig.2-1 Gate Charge Measurement Circuit VGS IAS Fig.2-2 Gate Charge Waveform VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 2 2 L IAS V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche waveform 5/5 2009.08 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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