4V Drive Pch MOSFET RRH040P03 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET SOP8 Features 1) Low Gate Charge. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Package Type Inner circuit Taping (8) (7) (6) (5) TB Code Basic ordering unit (pieces) 2500 RRH040P03 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Drain-source voltage VDSS −30 V Gate-source voltage VGSS ±20 V Parameter Drain current Source current (Body Diode) Continuous ID ±4 A Pulsed IDP ±16 A Continuous Is −1.6 A Pulsed Isp −16 A ∗1 ∗1 ∗2 Total power dissipation PD 2.0 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C Symbol Limits Unit Rth (ch-a)∗ 62.5 °C / W ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient ∗ Mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.12 - Rev.A RRH040P03 Data Sheet Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Drain-source breakdown voltage Symbol Min. Typ. Max. Unit IGSS − − ±10 μA VGS=±20V, VDS=0V V (BR)DSS −30 − − V ID=−1mA, VGS=0V Test Conditions IDSS − − −1 μA VDS=−30V, VGS=0V Gate threshold voltage VGS (th) −1.0 − −2.5 V VDS=−10V, ID=−1mA − 55 75 Static drain-source on-state resistance RDS (on)∗ − 85 115 − 95 125 Forward transfer admittance l Yfs l ∗ 3 − − S ID=−4A, VDS=−10V Input capacitance Ciss − 480 − pF VDS=−10V Output capacitance Coss − 70 − pF VGS=0V Reverse transfer capacitance Crss − 70 − pF f=1MHz td(on) ∗ tr ∗ − 7 − ns ID=−2A, VDD − 18 − ns VGS=−10V td(off) ∗ tf ∗ − 50 − ns RL=7.5Ω − 37 − ns RG=10Ω Qg ∗ − 5.2 − nC Qgs ∗ Qgd ∗ − 1.6 − nC − 1.6 − nC ID=−4A, VDD VGS=−5V RL=3.8Ω RG=10Ω Zero gate voltage drain current Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ID=−4A, VGS=−10V mΩ ID=−2A, VGS=−4.5V ID=−2A, VGS=−4V −15V −15V ∗Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Test Conditions Is=−4A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.12 - Rev.A RRH040P03 Data Sheet Electrical characteristic curves 6 18 4 VGS= -3.0V 2 14 12 10 6 4 VGS= -3.0V 2 0 0.2 0.4 0.6 0.8 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 1 0 2 4 6 8 1 10 1.5 2 2.5 3 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics 100 1000 VGS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 10 10 0.1 DRAIN-CURRENT : -ID[A] 10 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 10 0.1 1 VDS= -10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] 0.1 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 0.1 VGS= -4.5V Pulsed DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) VGS= -4.0V Pulsed 1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) REVERSE DRAIN CURRENT : -Is [A] 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -4.0V VGS= -4.5V VGS= -10V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta=25°C Pulsed 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= -10V Pulsed 1 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -4.0V VGS= -3.5V 8 VGS= -2.5V 1000 10 Ta=25°C Pulsed VGS= -10V 16 DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 8 20 Ta=25°C Pulsed VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.5V DRAIN CURRENT : -ID[A] 10 10 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0 0.5 1 1.5 DRAIN-CURRENT : -ID[A] SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.8 Forward Transfer Admittance vs. Drain Current Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 2009.12 - Rev.A RRH040P03 Data Sheet 10000 250 200 ID= -2.0A 150 ID= -4.0A 100 50 0 td(off) 1000 tf 5 Ta=25°C VDD= -15V VGS=-10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C Pulsed SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 300 100 td(on) 10 tr 1 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics 4 3 2 Ta=25°C VDD= -15V ID= -4.0A RG=10Ω Pulsed 1 0 0 1 2 3 4 5 6 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics CAPACITANCE : C [pF] 10000 Ta=25°C f=1MHz VGS=0V Ciss 1000 100 Crss Coss 10 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/5 2009.12 - Rev.A RRH040P03 Data Sheet Measurement circuit Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL D.U.T. 10% 10% RG VDD VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL D.U.T. IG(Const.) Qg VGS Qgs RG Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.2-2 Gate Charge Waveform 5/5 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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