1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 Features 1) Low On-state resistance. 2) Low voltage drive(1.5V). 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M03 Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) TT8M3 Taping TR 3000 (8) Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Source current (Body Diode) Limits Tr1 : N-ch Tr2 : P-ch 20 VDSS Unit 20 V VGSS 10 10 V Continuous ID 2.5 2.4 A Pulsed Continuous IDP Is *1 10 0.8 9.6 0.8 A A Pulsed Isp *1 10 9.6 A Gate-source voltage Drain current Symbol Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *2 1.25 W / TOTAL 1.0 150 55 to +150 W / ELEMENT C C (7) (6) (5) (1) Tr1 Source (2) Tr1 Gate ∗2 ∗2 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain ∗1 (6) Tr2 Drain (7) Tr1 Drain (2) (3) (4) (1) (8) Tr1 Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/8 2010.07 - Rev.A Data Sheet TT8M3 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=±10V, VDS=0V Gate-source leakage Drain-source breakdown voltage V (BR)DSS 20 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA - 52 72 - 65 90 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Conditions * RDS (on) ID=2.5A, VGS=4.5V m ID=2.5A, VGS=2.5V - 85 120 - 100 140 l Yfs l* 2.7 - - S VDS=10V, ID=2.5A Input capacitance Ciss - 260 - pF VDS=10V Output capacitance Coss - 65 - pF VGS=0V Reverse transfer capacitance Crss - 35 - pF f=1MHz Turn-on delay time td(on)* - 9 - ns ID=1.2A, VDD 10V tr * - 17 - ns VGS=4.5V td(off)* - 28 - ns RL=8.3 tf * - 17 - ns RG=10 Total gate charge Qg * - 3.6 - nC ID=2.5A, VDD 10V Gate-source charge Gate-drain charge Qgs * Qgd * - 0.7 0.6 - nC nC VGS=4.5V,RL=4 RG=10 Forward transfer admittance Rise time Turn-off delay time Fall time ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=2.5A, VGS=0V *Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/8 2010.07 - Rev.A Data Sheet TT8M3 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit IGSS - - 100 A VGS=±10V, VDS=0V Gate-source leakage Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current 20 IDSS Conditions - - V ID=1mA, VGS=0V - 1 A VDS=20V, VGS=0V - 1.0 V VDS=10V, ID=1mA VGS (th) 0.3 - 80 105 ID=2.4A, VGS=4.5V RDS (on)* - 105 140 ID=1.2A, VGS=2.5V - 150 225 - 180 360 l Yfs l* 2.4 - - S ID=2.4A, VDS=10V Input capacitance Ciss - 850 - pF VDS=10V Output capacitance Coss - 60 - pF VGS=0V Reverse transfer capacitance Crss - 50 - pF f=1MHz Turn-on delay time td(on) * - 9 - ns ID=1.2A, VDD 10V tr * - 25 - ns VGS=4.5V td(off) * - 55 - ns RL=8.3 tf * - 45 - ns RG=10 Total gate charge Qg * - 6.7 - nC ID=2.4A Gate-source charge Gate-drain charge Qgs * Qgd * - 1.7 0.6 - nC nC VDD 10V VGS=4.5V Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time m ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=2.4A, VGS=0V *Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/8 2010.07 - Rev.A Data Sheet TT8M3 Electrical characteristic curves<Tr1(Nch)> 4 3 VGS= 2.5V VGS= 2.0V VGS= 1.8V VGS= 1.5V 2 VGS= 1.2V 1 10 4 VGS= 4.5V VGS= 2.5V VGS= 1.8V 3 VGS= 1.5V 2 VGS= 1.2V 1 VGS= 1.0V VGS= 1.0V 0.4 0.6 0.8 1 0 DRAIN-SOURCE VOLTAGE : VDS[V] 1000 Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Fig.1 Typical Output Characteristics( Ⅰ) VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 100 10 0.01 0.1 1 1000 2 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0.01 8 0 10 0.5 1.5 2 GATE-SOURCE VOLTAGE : VGS[V] VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 10 0.1 1 10 1000 VGS= 2.5V Pulsed VGS= 1.5V Pulsed 10 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 10 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 4/8 0.1 1 10 DRAIN-CURRENT : ID[A] 100 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 1000 1 Fig.3 Typical Transfer Characteristics 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C DRAIN-CURRENT : ID[A] Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.1 6 100 10 100 0.01 0.1 Fig.2 Typical Output Characteristics( Ⅱ) DRAIN-CURRENT : ID[A] VGS= 1.8V Pulsed 1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 1000 4 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.2 VDS= 10V Pulsed 0.001 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0 Ta=25°C Pulsed DRAIN CURRENT : ID[A] VGS= 4.5V 5 Ta=25°C Pulsed DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 5 10 VDS= 10V Pulsed 1 Ta=25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.07 - Rev.A Data Sheet TT8M3 200 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.1 0.01 0 0.5 1 ID= 2.5A 150 ID= 1.25A 100 50 0 1.5 tf 100 td(off) td(on) 10 1 0 5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 5 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed tr SOURCE-DRAIN VOLTAGE : VSD [V] Fig.12 Switching Characteristics 1000 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : VGS [V] 1000 Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : Is [A] 10 4 3 2 Ta=25°C VDD=10V ID=2.5A RG=10Ω Pulsed 1 0 0 1 2 3 4 Ciss 100 Crss Coss 10 5 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 5/8 2010.07 - Rev.A Data Sheet TT8M3 Electrical characteristic curves<Tr2(Pch)> VGS=1.8V 3 2 VGS= 1.5V 1 VGS= 1.2V VGS= 1.8V 4 3 VGS= 1.5V VGS= 4.5V VGS= 2.5V 2 1 0 0.6 0.8 0 2 8 Fig.2 Typical output characteristics( Ⅱ) 1000 VGS= 4.5V 10 1 Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 0.5 10 0.1 DRAIN-CURRENT : -ID[A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 10 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 2 Fig.3 Typical Transfer Characteristics 1 10 VGS= -2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] VGS= -1.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 10 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 6/8 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 1000 1.5 GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID[A] VGS= -1.8V Pulsed 1 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0 1000 VGS= -4.5V Pulsed 100 10 1 0.1 10 Fig.1 Typical output characteristics( Ⅰ) 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 6 DRAIN-SOURCE VOLTAGE : -VDS[V] 100 0.1 4 DRAIN-SOURCE VOLTAGE : -VDS[V] VGS= 1.5V VGS=1.8V VGS=2.5V Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.001 1 Ta=25°C Pulsed 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.4 VDS= 10V Pulsed 0.01 VGS= 1.2V FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 1000 Ta=25°C Pulsed 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 DRAIN CURRENT : -ID[A] 4 DRAIN CURRENT : -ID[A] 5 VGS= 4.5V VGS= 2.5V Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 5 10 VDS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 1 0.1 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.07 - Rev.A Data Sheet 10000 200 VGS=0V Pulsed 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=25°C 0.01 0.001 0 0.5 1 1.5 Ta=25°C Pulsed 150 ID= -1.2A ID= -2.4A 100 50 1000 tf td(off) 10 td(on) 1 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25°C VDD= 10V VGS= 4.5V RG=10Ω Pulsed 100 tr 0 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.12 Switching Characteristics 10000 CAPACITANCE : C [pF] 5 GATE-SOURCE VOLTAGE : -VGS [V] SWITCHING TIME : t [ns] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] TT8M3 4 3 2 Ta=25°C VDD= 10V ID= 2.4A RG=10Ω Pulsed 1 0 0 2 4 6 Ciss Ta=25°C f=1MHz VGS=0V 1000 Coss 100 Crss 10 8 0.01 0.1 1 10 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.12 Dynamic Input Characteristics Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 7/8 100 2010.07 - Rev.A Data Sheet TT8M3 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching time measurement circuit toff Fig.1-2 Switching waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate charge measurement circuit <Tr2(Pch)> Pulse Width VGS ID VDS VGS 10% 50% RL D.U.T. 90% 50% 10% RG VDD VDS 10% 90% td(on) ton Fig 3-1 Switching Time Measurement Circuit Fig.1-1 90% td(off) tr tf toff Fig.1-2 Fig 3-2 Switching Waveforms VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Fig 4-1 Gate charge measurement circuit Fig.2-2 Fig 4-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2010 ROHM Co., Ltd. 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