10V Drive Nch MOSFET R5011ANJ zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 9.0 7.25 1.3 (1) (2) (3) Each lead has same dimensions LPTL 8.9 4.8 zApplications Switching (1) Gate (2) Drain (3) Source zPackaging specifications Each lead has same dimensions zInner circuit Taping Package Type (1) (2) (3) Code LPTS TL LPTL TLL Basic ordering unit (pieces) ∗1 1000 (1) ∗1 Body Diode zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VDSS 500 V Drain-source voltage Gate-source voltage Drain current Pulsed Source current (Body Diode) ±30 V ∗3 ±11 A ∗1 ±44 A 11 A ∗1 44 A 5.5 A 8.1 mJ VGSS Continuous ID IDP ∗3 Continuous IS Pulsed ISP Avalanche current IAS ∗2 Avalanche energy EAS ∗2 Total power dissipation (Tc=25°C) PD 75 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C (2) (3) (1) Gate (2) Drain (3) Source ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 1.67 °C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.04 - Rev.A Data Sheet R5011ANJ zElectrical characteristics (Ta=25°C) Parameter Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 500 − − V ID=1mA, VGS=0V IDSS − − 100 µA VDS=500V, VGS=0V VGS(th) 2.5 − 4.5 V VDS=10V, ID=1mA − Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance RDS(on) Forward transfer admittance | Yfs | ∗ ∗ Conditions 0.38 0.5 Ω ID=5.5A, VGS=10V 3.5 − − S VDS=10V, ID=5.5A Input capacitance Ciss − 1000 − pF VDS=25V Output capacitance Coss − 400 − pF VGS=0V Reverse transfer capacitance Crss pF f=1MHz − 35 − ∗ − 26 − ns VDD 250V, ID=5.5A ∗ − 28 − ns VGS=10V td(off) ∗ − 75 − ns RL=45.5Ω tf ∗ − 30 − ns RG=10Ω Total gate charge Qg ∗ − 30 − nC Gate-source charge Qgs ∗ − 7 − nC Gate-drain charge Qgd ∗ − 12 − nC VDD 250V ID=11A VGS=10V RL=22.7Ω / RG=10Ω Turn-on delay time td(on) Rise time Turn-off delay time tr Fall time ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 11A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.04 - Rev.A Data Sheet R5011ANJ zElectrical characteristic curves PW=1ms PW=100ms 1 DC operation 0.1 Tc = 25°C Single Pulse 0.01 15 7.0V 6.0V 6.5V 10 5.5V 5.0V 5 100 1000 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 0.1 0.01 0.001 0 1.5 3 4.5 6 0.8 0.7 0.6 0.5 ID= 11.0A 0.4 ID= 5.5A 0.3 0.2 0.1 30 40 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 6.0V 5.0V 2 VGS= 4.5V 0 50 1 2 3 4 5 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.3 Typical Output Characteristics(Ⅱ) 10 5 4 3 2 1 0 -50 0 50 100 150 VGS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 0.1 1 100 VGS= 10V Pulsed ID= 11.0A 0.6 0.4 ID= 5.5A 0.2 -50 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1 0.8 10 DRAIN CURRENT : ID (A) Fig.5 Gate Threshold Voltage vs. Channel Temperature 0 0 4 CHANNEL TEMPERATURE: Tch (°C) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25°C Pulsed 20 VDS= 10V ID= 1mA GATE-SOURCE VOLTAGE : VGS (V) 1 10 6 Fig.4 Typical Transfer Characteristics 0.9 6.5V Fig.2 Typical Output Characteristics(Ⅰ) GATE THRESHOLD VOLTAGE: VGS(th) (V) VDS= 10V Pulsed 5.5V 7.0V 6 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.1 Maximum Safe Operating Aera 100 10V 8.0V 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 10 0 50 100 150 CHANNEL TEMPERATURE: Tch (°C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 3/5 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 1 Ta= 25°C Pulsed 8 VGS= 4.5V DRAIN-SOURCE VOLTAGE : VDS ( V ) DRAIN CURRENT : ID (A) 8.0V 0 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 10V Ta= 25°C Pulsed PW=100us DRAIN CURRENT: ID (A) 10 10 20 Operation in this area is limited by RDS(ON) DRAIN CURRENT: ID (A) DRAIN CURRENT : ID (A) 100 VDS= 10V Pulsed 10 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 0.01 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current 2009.04 - Rev.A Data Sheet VGS= 0V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 1000 Ciss Coss 100 Crss Ta= 25°C f= 1MHz VGS= 0V 10 1 0.01 0 0.5 1 10 100 1000 Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 10000 SWITCHING TIME : t (ns) REVERSE RECOVERY TIME: trr (ns) 1 DRAIN-SOURCE VOLTAGE : VDS (V) 1000 100 Ta= 25°C di / dt= 100V / µs VGS= 0V Pulsed Ta= 25°C VDD= 250V ID= 11A RG= 10Ω Pulsed 10 5 0 0.1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 0 10 20 30 40 50 TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics Ta= 25°C VDD= 250V VGS= 10V RG= 10Ω Pulsed tf 1000 td(off) 100 10 td(on) tr 1 10 0.1 1 10 0.01 100 0.1 REVERSE DRAIN CURRENT : IDR (A) 1 10 100 DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics Fig.13 Reverse Recovery Time vs.Reverse Drain Current NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) GATE-SOURCE VOLTAGE : VGS (V) 10 15 10000 100 CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) R5011ANJ 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） Rth（ch-a） = 45.8°C/W 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/5 2009.04 - Rev.A Data Sheet R5011ANJ zSwitching characteristics measurement circuit Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching waveforms Fig.1-1 Switching time measurement circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-1 Gate charge measurement circuit VGS IAS Fig.2-2 Gate charge waveform VDS VD(BR)DSS D.U.T. L IAS RG VDD EAS = 2 L IAS VD(BR)DSS VD(BR)DSS - VDD Fig.3-2 Avalanche waveform Fig.3-1 Avalanche Measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 2 5/5 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A