Single-chip Type with Built-in FET Switching Regulator High-efficiency Step-up Switching Regulator with Built-in Power MOSFET BD8314NUV No.09027EAT09 ● General Description ROHM’s High-efficiency Step-up Switching Regulator Built-in Power MOSFET BD8314NUV generates step-up output including 8 V or 10 V from 4 batteries, batteries such as Li1cell or Li2cell etc. or a 5 V fixed power supply line. This IC allows easy production of small and a wide range of output current, and is equipped with an external coil/capacitor downsized by high frequency operation of 1.2 MHz, built-in 2.5 A rated 80 mΩ Nch FET SW, and flexible phase compensation system on board. ● Features 1) Incorporates Nch FET capable of withstanding 2.5 A/14 V. 2) Incorporates phase compensation device between input and output of ERROR AMP. 3) Small coils and capacitors to be used by high frequency operation of 1.2 MHz 4) Input voltage 3.0 V – 12 V 5) Output current 600 mA (3.5 V – 10 V) at 10 V 600 mA (3.0 V – 8 V) at 8 V 6) Incorporates soft-start function. 7) Incorporates timer latch system short protecting function. VSON010V3030 8) As small as 3 mm□, SON 10-pin package ● Application General portable equipment like DSC/DVC powered by 4 dry batteries or Li2cell ●Operating Conditions (Ta = 25°C) Parameter Symbol Voltage range Unit Power supply voltage VCC 3.0 to 12 V Output voltage VOUT 4.0 to 12 V ●Absolute Maximum Ratings Parameter Maximum applied power voltage Maximum input voltage Maximum input current Power dissipation Operating temperature range Storage temperature range Junction temperature Symbol VCC, LX SWOUT, INV Iinmax Pd Topr Tstg Tjmax Rating 14 Unit V 14 V 2.5 700 -25 to +85 -55 to +150 +150 mW °C °C °C A *1 When used at Ta = 25°C or more installed on a 74.2 × 74.2 × 1.6t mm board, the rating is reduced by 5.6 mW/°C. * These specifications are subject to change without advance notice for modifications and other reasons. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 1/15 2009.03 - Rev.A Technical Note BD8314NUV ● Electrical Characteristics (Unless otherwise specified, Ta = 25 °C, VCC = 7.4 V) Parameter Symbol [Low voltage input malfunction preventing circuit] Detection threshold voltage VUV Hysteresis range ΔVUVhy [Oscillator] Oscillation frequency fosc [Regulator] Output voltage VREG [ERROR AMP] INV threshold voltage VINV Input bias current IINV Soft-start time Tss [PWM comparator] LX Max Duty Dmax1 [SWOUT] ON resistance RONSWOUT [Output] LX NMOS ON resistance RON LX leak current Ileak [STB] Operation VSTBH STB pin control voltage No-operation VSTBL STB pin pull-down resistance RSTB [Circuit current] Standby current VCC ISTB Circuit current at operation VCC Icc Minimum Target Value Typical Maximum Unit 50 2.4 100 2.6 200 V mV 1.1 1.2 1.3 MHz 4.65 5.0 5.35 V 0.99 -50 5.3 1.00 0 8.8 1.01 50 12.2 V nA msec 77 85 93 % - 50 100 Ω -1 80 0 150 1 mΩ uA 2.5 -0.3 250 400 11 0.3 700 V V kΩ - 600 1 900 uA uA Conditions VREG monitor Vcc=11.0V , VINV=5.5V VINV=1.2V Not designed to be resistant to radiation ● Description of Pins Pin No. Pin Name Function 1 GND Ground terminal 2 VCC 3 VREG 4~5 Lx Control part power input terminal 5 V output terminal of regulator for internal circuit Coil connecting terminal 6~7 PGND Power transistor ground terminal GND SWOUT VCC INV VREG STB 8 STB ON/OFF terminal LX PGND 9 INV ERROR AMP input terminal LX PGND 10 SWOUT STBSW for split resistance Fig.1 Pin layout www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 2/15 2009.03 - Rev.A Technical Note BD8314NUV ● Block Diagram VREG STB VCC Reference 5V REG STBY_IO VREG GND VREF FB H OSC 1.2MHz UVLO Lx SCP OSC×16000 count STOP PWM CONTROL VREG PRE DRIVER 80mΩ PGND + + - ERROR_AMP VREF Soft Start SWOUT STB 50Ω INV Fig.2 Block diagram www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 3/15 2009.03 - Rev.A Technical Note BD8314NUV ● Description of Blocks 1. VREF This block generates ERROR AMP reference voltage. The reference voltage is 1.0 V. 2. UVLO Circuit for preventing low voltage malfunction Prevents malfunction of the internal circuit at activation of the power supply voltage or at low power supply voltage. Monitors VREG pin voltage to turn off all output FET and DC/DC converter output when VREG voltage is lower than 2.4 V, and reset the timer latch of the internal SCP circuit and soft-start circuit. This threshold contains 100 mV hysteresis. 3. SCP Timer latch system short-circuit protection circuit When the INV pin is the set 1.0 V or lower voltage, the internal SCP circuit starts counting. The internal counter is in synch with OSC; the latch circuit activates after a lapse of 13.3 msec after the counter counts about 16000 oscillations and then, turn off DC/DC converter output. To reset the latch circuit, turn off the STB pin once. Then, turn it on again or turn on the power supply voltage again. 4. OSC Circuit for oscillating sawtooth waves with an operation frequency fixed at 1.2 MHz 5. ERROR AMP Error amplifier for detecting output signals and outputting PWM control signals The internal reference voltage is set at 1.0 V. A primary phase compensation device of 200 pF, 62 kΩ is built in between the inverting input terminal and the output terminal of this ERROR AMP. 6. PWM COMP Voltage-pulse width converter for controlling output voltage corresponding to input voltage Comparing the internal SLOPE waveform with the ERROR AMP output voltage, PWM COMP controls the pulse width to the output to the driver. Max Duty is set at 85%. 7. SOFT START Circuit for preventing in-rush current at startup by bringing the output voltage of the DC/DC converter into a soft-start Soft-start time is in synch with the internal OSC, and the output voltage of the DC/DC converter reaches the set voltage after about 10000 oscillations . 8. PRE DRIVER CMOS inverter circuit for driving the built-in Nch FET. 9. STBY_IO Voltage applied on STB pin (8 pin) to control ON/OFF of IC Turned ON when a voltage of 2.5 V or higher is applied and turned OFF when the terminal is open or 0 V is applied. Incorporates approximately 400 kΩ pull-down resistance. 10. Nch FET SW Built-in SW for switching the coil current of the DC/DC converter. Incorporates an 80 mΩ NchFET SW capable of withstanding 14 V. Since the current rating of this FET is 2.5 A, it should be used within 2.5 A including the DC current and ripple current of the coil. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 4/15 2009.03 - Rev.A Technical Note BD8314NUV ● Reference Data (Unless otherwise specified, Ta = 25°C, VCC = 7.4 V) 1.02 1.02 1.01 1.01 5.3 1.00 VREG VOLTAGE [V] INV THRESHOLD [V] INV THRESHOLD [V] 5.2 1.00 5.1 5.0 4.9 0.99 0.99 4.8 4.7 0.98 0.98 -40 -20 0 20 40 60 80 100 0 120 2 4 6 8 10 12 -40 14 0 VCC [V] TEMPERATURE [℃] Fig.3. INV threshold temperature property Fig.4. INV threshold power supply property 80 120 Fig.5. VREG output temperature property 1.4 1.4 8 40 TEMPERATURE [℃] 7 5 4 3 2 FREQUENCY [ MHz ] FREQUENCY [MHz] VREG[V] 1.3 1.3 6 1.2 1.2 1.1 1.1 1 0 1.0 1.0 0 2 4 6 8 10 12 14 -40 0 Fig.6. VREG output power supply property 3.5 3 120 6 9 Fig.7. fosc Fig.8. temperature 15 fosc voltage 120 160 0.25 12 VCC [V] UVLO release 0.20 3.2 3.1 0.15 Hysteresis width 2.9 0.10 UVLO detection 2.8 2.7 0.05 140 ID=500mA ID=500mA 100 120 ON RESISTANCE [ mΩ] 3.3 ON RESISTANCE [ mΩ ] 3.4 Hysteresis Voltage VhysVhys[V] [V] ヒステリシス電圧 UVLO THRESHOLD VOLTAGE [ V ] 80 TEMPERATURE [℃] VCC [V] 3.0 40 100 80 60 40 80 60 40 20 20 2.6 2.5 0.00 -40 -20 0 25 50 85 100 120 TEMPARATURE [℃] Fig.9. UVLO threshold temperature property www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 0 0 -40 0 40 80 TEMPARATURE [℃] Fig.10. Nch FET ON resistance temperature 5/15 120 3 6 9 12 15 VCC [V] Fig.11. Nch FET ON resistance power supply 2009.03 - Rev.A Technical Note BD8314NUV ON 2.0 1.5 ID=1mA 80 ID=1mA 80 SWOUT ON Resistance [Ω ] SWOUT ON Resistance [Ω ] STB Voltage [V] 100 100 2.5 60 40 20 60 40 20 OFF 1.0 0 -50 0 50 100 150 0 -40 VCC [V] 40 80 120 3 6 Fig.13. SWOUT ON resistance temperature property 95 90 90 85 12 15 Fig.14. SWOUT ON resistance power supply property 2.5 2.0 STB Voltage [V] Lx Max Duty [ % ] 95 9 VCC [V] TEMPARATURE [℃] Fig.12. STB threshold temperature property Lx Max Duty [%] 0 85 1.5 80 80 1.0 75 75 -40 0 40 80 120 3 6 9 12 15 VCC [V] TEMPARATURE [℃] Fig.15. Lx Max duty temperature property Fig.16. Lx Max duty power supply property -50 0 50 100 150 TEMPARATURE [℃] Fig.17. Circuit current temperature property 1000 800 ICC [uA] 600 400 200 0 0 2 4 6 8 10 12 14 VCC [V] Fig.18. Circuit current power supply property www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 6/15 2009.03 - Rev.A Technical Note BD8314NUV ● Example of Application Input: 3.0 to 10 V, output: 10 V / 500 mA RSX201L-30 ROHM) 10V/500mA 22μF GRM32EB31C226KE16(Murata) 4.7μH DE3518E(TOKO) PGND 6 5 Lx VBAT=2.5~4.5V ON/OFF 200k Lx PGND 7 10p 8 STB 9 INV 4 VREG 3 VCC 2 10μF GRM31CB31E106KA75L(Murata) 1μF GRM188B11A105KA61(Murata) 10k 100k 1μF GRM21BB11C105KA01(Murata) 22k SWOUT 10 3.3~5.0V 1 GND Fig.19 Reference application diagram ● Reference Application Data 1 100 100 100 VCC=10V VCC=7.4V VCC=8.4V 40 60 VCC=4.8V 40 1 10 100 1000 1 10000 VCC=3.5V 40 0 0 0 60 20 20 20 10 100 1000 1 10000 10.5 10.5 14 10.4 10.4 13 10.3 OUTPUT VOLTAGE [V] 11 10 Io=500mA 8 VCC=8.4V 10.1 10.0 9.9 9.7 6 9.6 5 9.5 0 2 4 6 8 10 INPUT VOLTAGE [V] Fig.23 Line regulation www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 12 VCC=7.4V 9.8 7 10000 10.3 VCC=10V 10.2 VCC=6.0V OUTPUT VOLTAGE [V] Io=100mA 1000 Fig.22 Power conversion 15 12 100 OUTPUT CURRENT [mA] Fig.21 Power conversion Fig.20 Power conversion 9 10 OUTPUT CURRENT [mA] OUTPUT CURRENT [mA] OUTPUT VOLTAGE [V] EFFICIENCY [%] EFFICIENCY [%] EFFICIENCY [%] 60 VCC=4.0V 80 VCC=6.0V 80 80 10.2 VCC=4.8V 10.1 10.0 9.9 VCC=4.0V 9.8 VCC=3.5V 9.7 9.6 9.5 1 10 100 1000 10000 OUTPUT CURRENT [mA] Fig.24 Load regulation 1 7/15 1 10 100 1000 10000 OUTPUT CURRENT [mA] Fig.25 Load regulation 2 2009.03 - Rev.A Technical Note BD8314NUV ● Reference Application Data 2 (VCC = 3.0 V, 6.0 V, 8.4 V, VOUT = 10 V) 60 180 60 180 60 180 Phase 40 120 40 120 40 20 60 20 60 20 0 0 Phase 120 100 100 1k 1000 10k 10000 -20 -60 -120 -40 -120 -40 -120 -180 100k 1000000 1M 100000 -60 -180 100k 1000000 1M 100000 -60 100 100 10k 100k 60 10k 10000 100 100 1k 1000 10k 10000 -180 100k 1M 100000 1000000 Frequency [Hz] 周波数 [Hz] 周波数 [Hz] Frequency [Hz] Fig.27 Frequency response property 2 (VCC = 6.0 V, Io = 200 mA) Fig.28 Frequency response property 3 (VCC = 8.4 V, Io = 200 mA) 1M 180 60 120 40 20 60 20 0 0 40 1k 1000 Phase [deg] Gain [dB] Gain [dB] 0 Gain -60 周波数 [Hz][Hz] Frequency 1k 0 -20 Fig.26 Frequency response property 1 (VCC = 3.0 V, Io = 200 mA) 100 0 Gain 60 -60 -40 -60 0 Phase [deg] Gain -20 Phase [deg] Gain [dB] Phase Phase 180 60 180 120 40 60 20 60 0 0 Phase 120 -20 Gain -40 -60 100 100 1k 1000 10k 10000 100k 100000 Gain -60 -20 -60 -20 -60 -120 -40 -120 -40 -120 -180 1M 1000000 -60 -180 1M 1000000 -60 100 100 10k 10000 100k 100000 Frequency [Hz] 周波数 [Hz] 周波数 [Hz] Frequency [Hz] Fig.29 Frequency response property 4 (VCC = 3.0 V, Io = 500 mA) 1k 1000 100 100 1k 1000 10k 10000 100k 100000 Phase [deg] 0 Gain Gain [dB] 0 Phase [deg] Gain [dB] Phase [deg] Gain [dB] Phase -180 1M 1000000 Frequency [Hz] 周波数 [Hz] Fig.30 Frequency response property 5 (VCC = 6.0 V, Io = 500 mA) Fig.31 Frequency response property 6 (VCC = 8.4 V, Io = 500 mA) ● Reference Board Pattern VOUT GND Lx VBAT - The radiation plate on the rear should be a GND flat surface of low impedance in common with the PGND flat surface. - It is recommended to install a GND pin in another system as shown in the drawing without connecting it directly to this PGND www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 8/15 2009.03 - Rev.A Technical Note BD8314NUV ●Limits of the lowest power supply voltage to start up When using configuration of inputting VCC voltage from output voltage of DC/DC converter, the input voltage as power supply for the IC drops by Vf voltage of external Diode. The worst condition is shown as below. VCC terminal voltage - Vf voltage of external diode ≧ the worst voltage of UVLO reset voltage(=2.8V) Please judge this IC is useable or not considering needed start up voltage and load current. 3.2 VOUT=10V, typ 3.0 -35℃ VBAT [ V ] 2.8 2.6 25℃ 2.4 85℃ 2.2 0.1 1.0 10.0 100.0 Io [mA] Fig.32 start up voltage Vs load current www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 9/15 2009.03 - Rev.A Technical Note BD8314NUV ● Selection of Part for Applications (1) Inductor A shielded inductor that satisfies the current rating (current value, Ipecac as shown in the drawing below) and has a low DCR (direct resistance component) is recommended. Inductor values affect inductor ripple current, which will cause output ripple. Ripple current can be reduced as the coil L value becomes larger and the Δ IL switching frequency becomes higher. Ipeak =Iout ×(Vout/VIN) /η+ ∆IL/2 [A] Vin ∆IL= × L Vout -Vin 1 × Vout (1) [A] Fig.33 Inductor current (2) f (η: Efficiency, ∆IL: Output ripple current, f: Switching frequency) As a guide, inductor ripple current should be set at about 20 to 50% of the maximum input current. * Current over the coil rating flowing in the coil brings the coil into magnetic saturation, which may lead to lower efficiency or output oscillation. Select an inductor with an adequate margin so that the peak current does not exceed the rated current of the coil. (2) Output capacitor A ceramic capacitor with low ESR is recommended for output in order to reduce output ripple. There must be an adequate margin between the maximum rating and output voltage of the capacitor, taking the DC bias property into consideration. Output ripple voltage is obtained by the following equation. Vpp=Iout × Vout-Vin f×Co×Vout + Iout × RESR [V] … (3) Setting must be performed so that output ripple is within the allowable ripple voltage. (3) Output voltage setting The internal reference voltage of the ERROR AMP is 1.0 V. Output voltage is obtained by Equation (4) of Fig. 33, but it should be designed taking about 50 Ω, an error of NMOS ON resistance of SWOUT into consideration. VOUT ERROR AMP R1 INV R2 (R1+R2) Vo= R2 ×1.0 [V] ・・・ (4) VREF 1.0V SWOUT STB Fig.34 Setting of voltage feedback resistance www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 10/15 2009.03 - Rev.A Technical Note BD8314NUV (4) DC/DC converter frequency response adjustment system Condition for stable application The condition for feedback system stability under negative feedback is that the phase delay is 135 °or less when gain is 1 (0 dB). Since DC/DC converter application is sampled according to the switching frequency, the bandwidth GBW of the whole system (frequency at which gain is 0 dB) must be controlled to be equal to or lower than 1/10 of the switching frequency. In summary, the conditions necessary for the DC/DC converter are: - Phase delay must be 135°or lower when gain is 1 (0 dB). - Bandwidth GBW (frequency when gain is 0 dB) must be equal to or lower than 1/10 of the switching frequency. To satisfy above two items, R1, R2, R3, DS and RS in Fig. 34 should be set as follows. [1] R1, R2, R3 BD8314NUV incorporates phase compensation devices of R4=62 kΩ and C2=200pF. These C2 and R1, R2, and R3 values decide the prim ary pole that determines the bandwidth of DC/DC converter. VOUT R1 Inside of IC R4 C2 Rs FB R2 Primary pole point frequency fp= Cs R3 1 R1・R2 2π A×( +R3)×C2 R1+R2 ················ (1) Fig.35 Example of phase compensation setting DC/DC converter DC Gain DC Gain =A× 1 B × VOUT VOUT-VIN A: ERROR AMP Gain About 100dB = 105 B: Oscillator amplification = 0.5 VIN: Input voltage VOUT: Output voltage ················(2) By Equations (1) and (2), the frequency fsw of point 0 dB under limitation of the bandwidth of the DC gain at the primary pole point is as shown below. 1 fSW = fp×DC Gain = (R1・R2) 2πC2×( +R3 ) (R1+R2) × 1 B × VOUT VOUT-VIN ················(3) It is recommended that fsw should be approx.10 kHz. When load response is difficult, it may be set at approx. 20 kHz. By this setting, R1 and R2, which determine the voltage value, will be in the order of several hundred kΩ. Therefore, if an appropriate resistance value is not available and routing may cause noise, the use of R3 enables easy setting. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 11/15 2009.03 - Rev.A Technical Note BD8314NUV [2] Cs and Rs setting In the step-up DC/DC converter, the secondary pole point is caused by the coil and capacitor as expressed by the following equation. ················ (4) 1-D fLC= 2π√(LC) D: ON Duty = ( VOUT - VIN ) / VOUT This secondary pole causes a phase rotation of 180°. To secure the stability of the system, put zero points in 2 places to perform compensation. 1 Zero point by built-in CR fZ1= ················ (5) = 13kHz 2πR4C2 Zero point by Cs fZ1= 1 ················ (6) 2π(R1+R3)CS Setting CS2 to be half to 2 times a frequency as large as fLC provides an appropriate phase margin. It is desirable to set Rs at about 1/20 of (R1+R3) to cancel any phase boosting at high frequencies. Those pole points are summarized in the figure below. The actual frequency property is different from the ideal calculation because of part constants. If possible, check the phase margin with a frequency analyzer or network analyzer, etc.. Otherwise, check for the presence or absence of ringing by load response waveform and also check for the presence or absence of oscillation under a load of an adequate margin. (5) (6) (3) (4) Fig. 36 Example of DC/DC converter frequency property (Measured with FRA5097 by NF Corporation) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 12/15 2009.03 - Rev.A Technical Note BD8314NUV ● I/O Equivalence Circuit FB INV VREG VCC VREG FB VREG INV VREG SWOUT VCC VCC VCC SWOUT VREG STB Lx, PGND VCC VCC Lx STB PGND www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 13/15 2009.03 - Rev.A Technical Note BD8314NUV ● Precautions for Use 1) Absolute Maximum Rating We dedicate much attention to the quality control of these products, however the possibility of deterioration or destruction exists if the impressed voltage, operating temperature range, etc., exceed the absolute maximum ratings. In addition, it is impossible to predict all destructive situations such as short-circuit modes, open circuit modes, etc. If a special mode exceeding the absolute maximum rating is expected, please review matters and provide physical safety means such as fuses, etc. 2) GND Potential Keep the potential of the GND pin below the minimum potential at all times. 3) Thermal Design Work out the thermal design with sufficient margin taking power dissipation (Pd) in the actual operation condition into account. 4) Short Circuit between Pins and Incorrect Mounting Attention to IC direction or displacement is required when installing the IC on a PCB. If the IC is installed in the wrong way, it may break. Also, the threat of destruction from short-circuits exists if foreign matter invades between outputs or the output and GND of the power supply. 5) Operation under Strong Electromagnetic Field Be careful of possible malfunctions under strong electromagnetic fields. 6) Common Impedance When providing a power supply and GND wirings, show sufficient consideration for lowering common impedance and reducing ripple (i.e., using thick short wiring, cutting ripple down by LC, etc.) as much as you can. 7) Thermal Protection Circuit (TSD Circuit) This IC contains a thermal protection circuit (TSD circuit). The TSD circuit serves to shut off the IC from thermal runaway and does not aim to protect or assure operation of the IC itself. Therefore, do not use the TSD circuit for continuous use or operation after the circuit has tripped. 8) Rush Current at the Time of Power Activation Be careful of the power supply coupling capacity and the width of the power supply and GND pattern wiring and routing since rush current flows instantaneously at the time of power activation in the case of CMOS IC or ICs with multiple power supplies. 9) IC Terminal Input This is a monolithic IC and has P+ isolation and a P substrate for element isolation between each element. P-N junctions are formed and various parasitic elements are configured using these P layers and N layers of the individual elements. For example, if a resistor and transistor are connected to a terminal as shown on Fig.36: ○ The P-N junction operates as a parasitic diode when GND > (Terminal A) in the case of a resistor or when GND > (Pin B) in the case of a transistor (NPN) ○ Also, a parasitic NPN transistor operates using the N layer of another element adjacent to the previous diode in the case of a transistor (NPN) when GND > (Pin B). The parasitic element consequently rises under the potential relationship because of the IC’s structure. The parasitic element pulls interference that could cause malfunctions or destruction out of the circuit. Therefore, use caution to avoid the operation of parasitic elements caused by applying voltage to an input terminal lower than the GND (P board), etc. B (Pin B) (Pin A) C ~ ~ Transistor (NPN) Resistor E GND N N N N P P+ P+ N N (Pin A) P+ ~ ~ P P+ N Parasitic Element P Substrate P Substrate Parasitic Element Parasitic Element GND GND Fig.37 Example of simple structure of Bipolar IC www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 14/15 2009.03 - Rev.A Technical Note BD8314NUV Ordering part number B D 8 Part No. 3 1 4 Part No. N U V - Package NUV: VSON010V3030 E 2 Packaging and forming specification E2: Embossed tape and reel (VSON010V3030) VSON010V3030 <Dimension> <Tape and Reel information> 3.0 ± 0.1 3.0 ± 0.1 Embossed carrier tape Quantity 3000pcs E2 Direction of feed 1PIN MARK 1.0MAX Tape + 0.03 (The direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand) 0.02 − 0.02 (0.22) S 0.08 S 2.0 ± 0.1 0.4 ± 0.1 1.2 ± 0.1 1234 1234 1234 10 0.5 1234 5 1234 0.5 1 1234 C0.25 Reel 6 0.25 +− 0.05 0.04 www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. (Unit:mm) 1Pin Direction of feed ※When you order , please order in times the amount of package quantity. 15/15 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A