ACE2302B N-Channel Enhancement Mode MOSFET Description The ACE2302B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Features VDS=20V ID=6A (VGS=10V) RDS(ON)=26mΩ (typ.) @ VGS=10V RDS(ON)=28mΩ (typ.) @ VGS=4.5V RDS(ON)=42mΩ (typ.) @ VGS=2.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) TA=25℃ TA=70℃ Drain Current (Pulsed) Power Dissipation TA=25℃ ID 6 4.8 A IDM 20 A PD 1.4 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3L 3 SOT-23-3L Description Function 1 1 G Gate 2 S Source 3 D Drain 2 Ordering information ACE2302B XX + H Halogen - free Pb - free BM : SOT-23-3L VER 1.2 1 ACE2302B N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current V(BR)DSS IDSS VGS(th) IGSS Drain-source on-state resistance RDS(ON) Forward transconductance Diode forward voltage Maximum body-diode continuous current gFS VSD Test Conditions Static VGS=0V, ID=250µA VDS=20V, VGS=0V VGS=VDS, IDS=250µA VGS=±12V, VDS=0V VGS=10V, ID=6A VGS=4.5V, ID=5A VGS=2.5V, ID=4A VDS=10V, ID=6A ISD=1.7A, VGS=0V Min Typ 20 24 0.6 0.74 19.5 22.6 31 5 0.78 IS Max Unit 1 1 100 26 28 42 V µA V nA mΩ 1 S V 1.7 A Switching Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Qg Qgs Qgd td(on) Tr td(off) Tf VGS=4.5V, VDS=10V, ID=6A VGS=10V, ID=1A RG=6Ω, VGS=4.5V 6.3 1.7 1.4 10.4 4.4 27.4 4.2 8.1 2.2 1.8 20.8 8.8 54.8 8.4 nC ns Dynamic Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VGS=0V, VDS=8V, f=1.0MHz 522.3 98.5 74.7 pF Note : 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE2302B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 3 ACE2302B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 4 ACE2302B N-Channel Enhancement Mode MOSFET Packing Information SOT-23-3L Unit: mm VER 1.2 5 ACE2302B N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6