ACE4440B N-Channel Enhancement Mode MOSFET Description The ACE4440B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features VDS=60V ID=6A (VGS=10V) RDS(ON)<35mΩ (VGS=10V) RDS(ON)<40mΩ (VGS=4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25℃ TA=70℃ Drain Current (Pulsed) Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature ID IDM PD 6 4.8 30 3 2 A A W TJ/TSTG -55~150 ℃ Packaging Type SOP-8 Ordering information ACE4440B XX + H Halogen - free Pb - free FM : SOP-8 VER 1.2 1 ACE4440B N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-state resistance Forward transconductance Diode forward voltage Maximum body-diode continuous current Symbol Test Conditions Static V(BR)DSS VGS=0V, ID=250µA IDSS VGS(th) IGSS VDS=60V, VGS=0V VGS=VDS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, ID=5A VGS=4.5V, ID=4A VDS=15V, ID=5.3A ISD=1A, VGS=0V RDS(ON) gFS VSD Min Typ Max Unit 60 1 V 1.4 26 31 24 0.75 IS 1 3 100 35 40 µA V nA mΩ 1 S V 3.1 A Switching Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Qg Qgs Qgd td(on) Tr td(off) Tf VGS=5V, VDS=30V, ID=5.3A VGS=4.5V, VDS=30V RL=6.8Ω, RGEN=1Ω 11.26 3.77 4.08 18.12 17.68 25 8.92 14.64 4.9 5.3 36.24 35.36 50 17.84 nC ns Dynamic Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VGS=0V, VDS=30V, f=1.0MHz 1062.8 157.26 56.56 pF Note : 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE4440B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 3 ACE4440B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 4 ACE4440B N-Channel Enhancement Mode MOSFET Packing Information SOP-8 Unit: mm VER 1.2 5 ACE4440B N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6