ACE ACE4440B

ACE4440B
N-Channel Enhancement Mode MOSFET
Description
The ACE4440B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features




VDS=60V
ID=6A (VGS=10V)
RDS(ON)<35mΩ (VGS=10V)
RDS(ON)<40mΩ (VGS=4.5V)
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)
TA=25℃
TA=70℃
Drain Current (Pulsed)
Power Dissipation
TA=25℃
TA=70℃
Operating temperature / storage temperature
ID
IDM
PD
6
4.8
30
3
2
A
A
W
TJ/TSTG -55~150 ℃
Packaging Type
SOP-8
Ordering information
ACE4440B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2
1
ACE4440B
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state
resistance
Forward transconductance
Diode forward voltage
Maximum body-diode
continuous current
Symbol
Test Conditions
Static
V(BR)DSS
VGS=0V, ID=250µA
IDSS
VGS(th)
IGSS
VDS=60V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, ID=5A
VGS=4.5V, ID=4A
VDS=15V, ID=5.3A
ISD=1A, VGS=0V
RDS(ON)
gFS
VSD
Min
Typ
Max
Unit
60
1
V
1.4
26
31
24
0.75
IS
1
3
100
35
40
µA
V
nA
mΩ
1
S
V
3.1
A
Switching
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
Tr
td(off)
Tf
VGS=5V, VDS=30V,
ID=5.3A
VGS=4.5V, VDS=30V
RL=6.8Ω, RGEN=1Ω
11.26
3.77
4.08
18.12
17.68
25
8.92
14.64
4.9
5.3
36.24
35.36
50
17.84
nC
ns
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=30V,
f=1.0MHz
1062.8
157.26
56.56
pF
Note :
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE4440B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
3
ACE4440B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
4
ACE4440B
N-Channel Enhancement Mode MOSFET
Packing Information
SOP-8
Unit: mm
VER 1.2
5
ACE4440B
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6