ACE1715B N-Channel Enhancement Mode MOSFET Description The ACE1715B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS (V) = 150V ID = 1.5 (VGS = 10V) RDS(ON) < 450mΩ (VGS = 10V) High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Absolute Maximum Ratings TA=25℃ unless otherwise noted Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage VDSS 150 V VGSS ±20 V O Drain Current (Continuous) * AC TA=25 C O TA=70 C Drain Current (Pulse) * B ID IDM O Power Dissipation TA=25 C O TA=70 C PD 1.5 1.0 A 6 2 1.3 Operating temperature / storage temperature TJ,TSTG -55 to 150 W O C Packaging Type SOT-23-6L Marking D D D D . G 1715 S Ordering information ACE1715B XX + H Halogen - free Pb - free GM : SOT-23-6L VER 1.1 1 ACE1715B N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 150 Zero Gate Voltage Drain Current IDSS VDS=150V, VGS=0V Gate Threshold Voltage IGS(TH) VGS= VDS, ID=250uA Gate Leakage Current IGSS VGS=±20V, VDS=0V Drain-Source On-state Resistance Forward Transconductance RDS(ON) VGS=10V, ID=1.5A 400 gFS VDS=15V, ID=1.5A 5 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=2A, VGS=0V 1.5 V 2.0 IS 1 uA 2.5 V ±100 nA 450 mΩ S 1.2 V 2 A Switching Total Gate Charge Qg 8 Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.1 Turn-On Delay Time td(on) 8 Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VGS=10V,VDS=75V, ID=1.5A VGS=10V ,VDS=75V, RL=75Ω,RGEN=6Ω 1.4 nC 10 ns 20 15 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS=0V ,VDS=75V, F=1MHz 235 36 pF 20 Note: A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 2 ACE1715B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Vds Drain Source Voltage(V) Figure 1 Output Characteristics Vgs Gate-Source Voltage(V) Figure 2 Transfer Characteristics ID-Drain Current(A) Figure 3 Rdson – Drain Current TJ -Junction Temperature (℃) Figure 4 Rdson-Junction Temperature Qg Gate Charge(nC) Figure 5 Gate Charge Vsd Source-Drain Voltage(V) Figure 6 Source – Drain Diode Forward VER 1.1 3 ACE1715B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Vds Drain -Source Voltage (V) Figure 7 Capacitance vs Vds TJ -Junction Temperature (℃) Figure 9 BVDSS vs Junction Temperature Vds Drain -Source Voltage(V) Figure 8 Safe Operation Area TJ -Junction Temperature (℃) Figure 10 Power De-rating Square Wave Pluse Duration)sec) Figure 11 Normalized Maximum Transient Thermal Impedance VER 1.1 4 ACE1715B N-Channel Enhancement Mode MOSFET Packing Information SOT-23-6L Units: mm VER 1.1 5 ACE1715B N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6