ACE4446B N-Channel Enhancement Mode Field Effect Transistor Description The ACE4446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Features VDS(V)=30V ID=15A (VGS=10V) RDS(ON)＜8.5mΩ (VGS=10V) RDS(ON)＜13mΩ (VGS=4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V VGSS ±20 V Gate-Source Voltage O Drain Current (Continuous) *AC TA=25 C O TA=70 C Drain Current (Pulse) *B ID IDM O Power Dissipation TA=25 C O TA=70 C Operating and Storage Temperature Range PD 15 12 A 50 3.5 2 TJ,TSTG -55 to 150 W O C Packaging Type DFN3*3-8L VER 1.2 1 ACE4446B N-Channel Enhancement Mode Field Effect Transistor Ordering information ACE4446B XX + H Halogen - free Pb - free NN : DFN3*3-8L Electrical CharacteristicsTA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V 100 nA Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA Forward Transconductance gFS VDS=5V, ID=15A 25 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=2A, VGS=0V 0.71 VGS=10V, ID=15A 5.9 8.5 VGS=4.5V, ID=10A 7 13 1.9 3 1 IS mΩ V S 1.0 V 2 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=15V, ID=14A VGS=5V VDS=15V, VGS=10V RGEN=6Ω, RL=15Ω 16 20.8 5 6.5 3 3.9 17 34 5 10 50 100 10 20 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=15V, VGS=0V f=1MHz 2470 325 pF 185 Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE4446B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE4446B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE4446B N-Channel Enhancement Mode Field Effect Transistor Packing Information DFN3*3-8L Unit: mm VER 1.2 5 ACE4446B N-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6