ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features • • • • • • VDS (V)=20V ID=6.5A (VGS=4.5V) RDS(ON)<21mΩ (VGS=4.5V) RDS(ON)<25mΩ (VGS=2.5V) RDS(ON)<33mΩ (VGS=1.8V) ESD Protected : 2000V Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation ID IDM TA=25℃ TA=70℃ Operating temperature / storage temperature PD 6.5 5.2 24 1 0.64 A A W TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 VER 1.1 1 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE1512EBMS + H Halogen - free Pb - free BMS : TSOT-23-3 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min 20 Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA Zero gate voltage drain current IDSS VDS=20V, VGS=0V Gate threshold voltage VGS(th) VGS=VDS, IDS=250µA Gate leakage current IGSS VGS=±8V, VDS=0V Drain-source on-state resistance RDS(ON) 0.4 V 0.52 1 µA 1 V 10 µA VGS=4.5V, ID=6.5A 16.2 21 VGS=2.5V, ID=5.5A 19.4 25 VGS=1.8V, ID=5A 24.4 33 Forward transconductance gFS VDS=5V, ID=6.5A 13 Diode forward voltage VSD ISD=2.5A, VGS=0V 0.67 Maximum body-diode continuous current IS mΩ S 1.6 V 2.5 A Switching Total gate charge Qg 13.8 17.94 Gate-source charge Qgs 4.1 5.33 Gate-drain charge Qgd 5.6 7.28 Turn-on delay time td(on) 6.2 12.4 Turn-on rise time tr 12.7 25.4 Turn-off delay time td(off) 51.7 103.4 Turn-off fall time tf 16 32 VGS=4.5V, VDS=10V, ID=8A VGS=5V, VDS=10V RL=1.5Ω, RGEN=3Ω nC ns Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 1160 VGS=0V, VDS=10V, f=1MHz 104 29 pF Note : A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 2 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VDS (Volts) On-Region Characteristics ID(A) On-Resistance vs. Drain Current and Gate Gate Voltage VGS (Volts) On-Resistance vs. Gate-Source Voltage VGS (Volts) Transfer Characteristics Temperature (OC) On-Resistance vs. Junction Temperature VSD (Volts) Body-Diode Characteristics VER 1.1 3 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics Qg (nC) Gate-Charge Characteristics VDS (Volts) Maximum Forward Biased Safe Operating Area VDS (Volts) Capacitance Characteristics Pulse Width(s) Single Pulse Power Rating Junction-to-Case Pulse Width(s) Normalized Maximum Transient Thermal Impedance VER 1.1 4 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Packing Information TSOT-23-3 SYMBOLS A A1 A2 B C D E E1 e e1 L L1 L2 R Θ Θ1 DIMENSIONS IN MILLIMETERS MIN NOM MAX 0.935 0.95 1.10 0.01 0.10 0.85 0.90 0.925 0.30 0.40 0.50 0.10 2.70 2.60 1.40 0.15 2.90 2.80 1.60 0.25 3.10 3.00 1.80 0.30 0.95BSC 1.90BSC 0.40 0.60REF 0.25BSC 0.60 0.10 0° 4° 7°NOM 8° VER 1.1 5 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection nit: mm Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6