ACE2310C Plastic-Encapsulate MOSFET Description The ACE2310C uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features • • • High power and current handing capability Lead free product is acquired Surface mount package Applications • • Battery Switch DC/DC Converter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current (note 1) IDM 10 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -55~150 ℃ Packaging Type SOT-23-3 Equivalent Circuit Ordering information ACE2310C XX + H Halogen - free Pb - free BM:SOT-23-3 VER 1.1 1 ACE2310C Plastic-Encapsulate MOSFET Electrical Characteristics (TA=25 OC unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit STATIC CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 2 V Drain-source on-resistance (note 3) RDS(on) 105 125 mΩ Forward tranconductance (note 3) Diode forward voltage (note 3) gFS VSD VGS =10V, ID =3A VGS =4.5V, ID =3A VDS =15V, ID =2A IS=3A, VGS = 0V 60 V 0.5 1.4 1.2 S V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=30V, VGS=-0V F=1MHz 247 34 pF pF 19.5 pF SWITCHING CHARACTERISTICS (note 4) Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time Total Gate Charge tf Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 6 VGS=-10V, VDD=30V ID=1.5,RGEN=1Ω 15 ns 15 10 VDS=30V, VGS=-4.5V, ID=-3A 6 1 nC 1.3 Note: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. VER 1.1 2 ACE2310C Plastic-Encapsulate MOSFET Typical Performance Characteristics VER 1.1 3 ACE2310C Plastic-Encapsulate MOSFET Packing Information SOT-23-3 SOT-23-3 Suggested Pad Layoutg VER 1.1 4 ACE2310C Plastic-Encapsulate MOSFET SOT-23-3 Tape and Reel VER 1.1 5 ACE2310C Plastic-Encapsulate MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6